isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 2000(Min)@IC= -8A • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Driver for chopper regulator, DC motor driver and general purpose appl

Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)

Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, DC Motor Driver and General Purpose

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2140 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for high power amplificati

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2140 APPLICATIONS • Designed for high power amplifications. • Optimum for the output stage of a HiFi audio amplifier

Low VCE(sat) Transistor

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150

Low VCE(sat) Transistor (??0V, ??A)

Features 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. Structure Epitaxial planar type PNP silicon transistor

Low VCE(sat) Transistor

FEATURES ● Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ● Excellent DC current gain characterisitics. ● Complementary the 2SD2150. APPLICATIONS ● This device is designed as a general purpose amplifier and switching.

TRANSISTOR(PNP)

FEATURES ● Excellent DC Current Gain ● Low Collector-emitter saturation voltage ● Complement the 2SD2150

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

Epitaxial Planar PNP Transistors

Epitaxial Planar PNP Transistors P/b Lead(Pb)-Free

Low Vce(sat) Transistor (-20V, -3A)

Features 1) Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S.

PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 600 mW Temp.=25°C Collector current ICM : -3 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ Tstg: -55°C to +150°C

SOT-89-3L Plastic-Encapsulate PNP Transistors

FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150

Low VCE(sat) Transistor(-20V,-3A)

FEATURES Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Excellent DC current gain characterisitics. Complementary the 2SD2150. APPLICATIONS This device is designed as a general purpose amplifier and switching.

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Low VCE(SAT) 0.2V(Typ.) (IC/IB=-2A/-0.1mA).

FEATURES • Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150.

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics. Applications General purpose amplifier.

PNP Transistors

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

Plastic-Encapsulate Transistors

FEATURES • Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150.

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

PNP Transistors

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

PNP Transistors

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

Low VCE(sat) Transistor (??0V, ??A)

Features 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. Structure Epitaxial planar type PNP silicon transistor

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching and Amplification

Silicon PNP transistor in a TO-92 Plastic Package

Description Silicon PNP transistor in a TO-92 Plastic Package Features Low saturation voltage. Applications For DC-DC conversion.

PNP Plastic Encapsulated Transistor

FEATURES ● General Purpose Switching and Amplification

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● General Purpose Switching and Amplification

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for DC-to-DC converter applications.

TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching and Amplification

Power transistor (-20V, -2A)

Features 1) Low saturation voltage, VCE : Max. −0.5V at IC/IB= −1A / −50mA. 2) Excellent DC current gain characteristics.

Power transistor (??0V, ??A)

Features 1) Low saturation voltage, VCE : Max. −0.5V at IC/IB= −1A / −50mA. 2) Excellent DC current gain characteristics.

Power Transistor

■ Features ● Low saturation voltage, ● Excellent DC current gain characteristics.

Power transistor (??0V, ??A)

Features 1) Low saturation voltage, VCE : Max. −0.5V at IC/IB= −1A / −50mA. 2) Excellent DC current gain characteristics.

PNP Low Vce(sat) Transistor

Voltage 20V Current 3A Features • Silicon PNP epitaxial type • Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA • High collector current capability • Excellent DC current gain characteristics • Lead free in compliance with EU RoHS 2011/65/EU directive. • Green molding compound as per IEC61249

PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.3V(max)@Ic/Ib=-3A/-0.3A  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free)

Silicon PNP Power Transistor

DESCRIPTION • High Current Capability • High Power Dissipation • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-180V(Min) • Complement to Type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATION

Transistor Silicon PNP Epitaxial Type (PCT Process) Power Amplifier Applications Features • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage

PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.3V(max)@Ic/Ib=-3A/-0.3A  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free)

PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.3V(max)@Ic/Ib=-3A/-0.3A  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free)

Silicon PNP Epitaxial Planar Transistor

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Silicon PNP Epitaxial Planar Transistor

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Low VCE(sat) Transistor (−20V, −3A)

文件：91.27 Kbytes Page：4 Pages

Bipolar Transistor

晶体管

Low VCE(sat) Transistor

Low VCE(sat) Transistor (−20V, −3A)

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PNP Silicon Medium Power Transistor

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TRANSISTOR (PNP)

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TRANSISTOR

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PNP Transistors

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TRANSISTOR

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PNP Transistors

文件：1.1975 Mbytes Page：2 Pages

PNP Transistors

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