Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)

Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, DC Motor Driver and General Purpose

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 2000(Min)@IC= -8A • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Driver for chopper regulator, DC motor driver and general purpose appl

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2140 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for high power amplificati

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2140 APPLICATIONS • Designed for high power amplifications. • Optimum for the output stage of a HiFi audio amplifier

PNP Transistors

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

丝印代码：AEQ；Low VCE(sat) Transistor(-20V,-3A)

FEATURES Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Excellent DC current gain characterisitics. Complementary the 2SD2150. APPLICATIONS This device is designed as a general purpose amplifier and switching.

Epitaxial Planar PNP Transistors

Epitaxial Planar PNP Transistors P/b Lead(Pb)-Free

Low Vce(sat) Transistor (-20V, -3A)

Features 1) Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S.

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Low VCE(sat) Transistor

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 600 mW Temp.=25°C Collector current ICM : -3 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ Tstg: -55°C to +150°C

TRANSISTOR(PNP)

FEATURES ● Excellent DC Current Gain ● Low Collector-emitter saturation voltage ● Complement the 2SD2150

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

SOT-89-3L Plastic-Encapsulate PNP Transistors

FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150

丝印代码：AE*；Low VCE(sat) Transistor

FEATURES ● Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ● Excellent DC current gain characterisitics. ● Complementary the 2SD2150. APPLICATIONS ● This device is designed as a general purpose amplifier and switching.

Low VCE(SAT) 0.2V(Typ.) (IC/IB=-2A/-0.1mA).

FEATURES • Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150.

Low VCE(sat) Transistor (??0V, ??A)

Features 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. Structure Epitaxial planar type PNP silicon transistor

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics. Applications General purpose amplifier.

Plastic-Encapsulate Transistors

FEATURES • Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150.

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Bipolar Transistor

As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). • Very good DC current gain \n• Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A);

Low VCE(sat) Transistor

为支持现有客户而生产的产品。不对新设计出售此产品。 Low VCE(sat)晶体管;

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

丝印代码：AEQ；PNP Transistors

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

丝印代码：AER；PNP Transistors

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

Low VCE(sat) Transistor (??0V, ??A)

Features 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. Structure Epitaxial planar type PNP silicon transistor

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

PNP Plastic Encapsulated Transistor

FEATURES ● General Purpose Switching and Amplification

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for DC-to-DC converter applications.

Silicon PNP transistor in a TO-92 Plastic Package

Description Silicon PNP transistor in a TO-92 Plastic Package Features Low saturation voltage. Applications For DC-DC conversion.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● General Purpose Switching and Amplification

丝印代码：B1426；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching and Amplification

丝印代码：B1426；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching and Amplification

Power transistor (??0V, ??A)

Features 1) Low saturation voltage, VCE : Max. −0.5V at IC/IB= −1A / −50mA. 2) Excellent DC current gain characteristics.

Power Transistor

■ Features ● Low saturation voltage, ● Excellent DC current gain characteristics.

Power transistor (-20V, -2A)

Features 1) Low saturation voltage, VCE : Max. −0.5V at IC/IB= −1A / −50mA. 2) Excellent DC current gain characteristics.

Power transistor (??0V, ??A)

Features 1) Low saturation voltage, VCE : Max. −0.5V at IC/IB= −1A / −50mA. 2) Excellent DC current gain characteristics.

PNP Low Vce(sat) Transistor

Voltage 20V Current 3A Features • Silicon PNP epitaxial type • Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA • High collector current capability • Excellent DC current gain characteristics • Lead free in compliance with EU RoHS 2011/65/EU directive. • Green molding compound as per IEC61249

Silicon PNP Power Transistor

DESCRIPTION • High Current Capability • High Power Dissipation • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-180V(Min) • Complement to Type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage applications

PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.3V(max)@Ic/Ib=-3A/-0.3A  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free)

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATION

Transistor Silicon PNP Epitaxial Type (PCT Process) Power Amplifier Applications Features • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage

丝印代码：B29；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.3V(max)@Ic/Ib=-3A/-0.3A  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free)

丝印代码：B29；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.3V(max)@Ic/Ib=-3A/-0.3A  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free)

Silicon PNP Epitaxial Planar Transistor

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Silicon PNP Epitaxial Planar Transistor

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Low VCE(sat) Transistor (−20V, −3A)

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晶体管

Low VCE(sat) Transistor (−20V, −3A)

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PNP Silicon Medium Power Transistor

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TRANSISTOR (PNP)

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PNP Transistors

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TRANSISTOR

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TRANSISTOR

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PNP Transistors

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PNP Transistors

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