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2SB1424晶体管资料
2SB1424别名:2SB1424三极管、2SB1424晶体管、2SB1424晶体三极管
2SB1424生产厂家:TOY
2SB1424制作材料:Si-PNP
2SB1424性质:表面帖装型 (SMD)
2SB1424封装形式:直插封装
2SB1424极限工作电压:20V
2SB1424最大电流允许值:3A
2SB1424最大工作频率:240MHZ
2SB1424引脚数:3
2SB1424最大耗散功率:0.75W
2SB1424放大倍数:
2SB1424图片代号:H-100
2SB1424vtest:20
2SB1424htest:240000000
- 2SB1424atest:3
2SB1424wtest:0.75
2SB1424代换 2SB1424用什么型号代替:2SA1314,2SA1730,2SB1301,2SB1302,2SB1518,2SB1440,
2SB1424价格
参考价格:¥0.4841
型号:2SB1424T100Q 品牌:ROHM 备注:这里有2SB1424多少钱,2025年最近7天走势,今日出价,今日竞价,2SB1424批发/采购报价,2SB1424行情走势销售排行榜,2SB1424报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SB1424 | Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES Powerdissipation PCM:600mW(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | ||
2SB1424 | LowVCE(sat)Transistor ■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | ||
2SB1424 | PNPSiliconMediumPowerTransistor FEATURES Powerdissipation PCM:600mWTemp.=25°C Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJTstg:-55°Cto+150°C | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | ||
2SB1424 | TRANSISTOR(PNP) FEATURES ●ExcellentDCCurrentGain ●LowCollector-emittersaturationvoltage ●Complementthe2SD2150 | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
2SB1424 | LowVce(sat)Transistor(-20V,-3A) Features 1)LowVCE(sat).VCE(sat)=-0.2V(Typ.)(IC/IB=-2A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. | ROHMRohm 罗姆罗姆半导体集团 | ||
2SB1424 | EpitaxialPlanarPNPTransistors EpitaxialPlanarPNPTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | ||
2SB1424 | SOT-89-3LPlastic-EncapsulatePNPTransistors FEATURES ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementthe2SD2150 | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
2SB1424 | SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementthe2SD2150 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | ||
2SB1424 | LowVCE(sat)Transistor FEATURES ●LowVCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ●ExcellentDCcurrentgaincharacterisitics. ●Complementarythe2SD2150. APPLICATIONS ●Thisdeviceisdesignedasageneralpurposeamplifier andswitching. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
2SB1424 | LowVCE(SAT)0.2V(Typ.)(IC/IB=-2A/-0.1mA). FEATURES •LowVCE(SAT)=-0.2V(Typ.)(IC/IB=-2A/-0.1mA). •ExcellentDCcurrentgaincharacterisitics. •Complementarythe2SD2150. | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份(香港)有限公司 | ||
2SB1424 | LowVCE(sat)Transistor(??0V,??A) Features 1)LowVCE(sat). VCE(sat)=−0.2V(Typ.) (IC/IB=−2A/−0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm 罗姆罗姆半导体集团 | ||
2SB1424 | SiliconPNPtransistorinaSOT-89PlasticPackage Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics. Applications Generalpurposeamplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
2SB1424 | Plastic-EncapsulateTransistors FEATURES •LowVCE(SAT)=-0.2V(Typ.)(IC/IB=-2A/-0.1mA). •ExcellentDCcurrentgaincharacterisitics. •Complementarythe2SD2150. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | ||
2SB1424 | TRANSISTOR(PNP) FEATURES Powerdissipation PCM:600mW(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | ||
2SB1424 | LOWVCE(SAT)TRANSISTOR LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
2SB1424 | PNPTransistors ■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
2SB1424 | LowVCE(sat)Transistor(-20V,-3A) FEATURES LowVCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ExcellentDCcurrentgaincharacterisitics. Complementarythe2SD2150. APPLICATIONS Thisdeviceisdesignedasageneralpurposeamplifier andswitching. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
2SB1424 | LowVCE(sat)Transistor(−20V,−3A) 文件:91.27 Kbytes Page:4 Pages | ROHMRohm 罗姆罗姆半导体集团 | ||
LOWVCE(SAT)TRANSISTOR LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
LOWVCE(SAT)TRANSISTOR LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PNPTransistors ■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
PNPTransistors ■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
LowVCE(sat)Transistor(??0V,??A) Features 1)LowVCE(sat). VCE(sat)=−0.2V(Typ.) (IC/IB=−2A/−0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm 罗姆罗姆半导体集团 | |||
LOWVCE(SAT)TRANSISTOR LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
LowVCE(sat)Transistor(−20V,−3A) 文件:91.27 Kbytes Page:4 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
PNPSiliconMediumPowerTransistor 文件:184.06 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
TRANSISTOR(PNP) 文件:109.45 Kbytes Page:1 Pages | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | |||
TRANSISTOR 文件:182.59 Kbytes Page:3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PNPTransistors 文件:1.1975 Mbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
TRANSISTOR 文件:182.59 Kbytes Page:3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PNPTransistors 文件:1.1975 Mbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.1975 Mbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
封装/外壳:TO-243AA 包装:卷带(TR) 描述:TRANS PNP 20V 3A MPT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
封装/外壳:TO-243AA 包装:卷带(TR) 描述:TRANS PNP 20V 3A MPT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
LowVCE(sat)Transistor(??0V,??A) 文件:72.21 Kbytes Page:4 Pages | ROHMRohm 罗姆罗姆半导体集团 |
2SB1424产品属性
- 类型
描述
- 型号
2SB1424
- 制造商
ROHM Semiconductor
- 功能描述
2SB1424T100P
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM/罗姆 |
24+ |
MPT3 |
9000 |
只做原装,欢迎询价,量大价优 |
|||
ROHM |
24+ |
SOT89 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
ROHM |
2024 |
SOT-89 |
55200 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
ROHM/罗姆 |
24+ |
SOT-89 |
1000 |
只做原厂渠道 可追溯货源 |
|||
ROHM/罗姆 |
24+ |
NA/ |
4865 |
原装现货,当天可交货,原型号开票 |
|||
ROHM(罗姆) |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
ROHM |
24+ |
SOT-89 |
6430 |
原装现货/欢迎来电咨询 |
|||
ROHM/罗姆 |
24+ |
SOT89 |
60000 |
||||
ROHM |
24+ |
TSSOP |
7852 |
原装现货假一罚十 |
|||
ROHM/罗姆 |
24+ |
SOT89 |
52500 |
郑重承诺只做原装进口现货 |
2SB1424规格书下载地址
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DdatasheetPDF页码索引
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