位置:首页 > IC中文资料第802页 > 2SB141
2SB141晶体管资料
2SB141别名:2SB141三极管、2SB141晶体管、2SB141晶体三极管
2SB141生产厂家:日本索尼公司
2SB141制作材料:Ge-PNP
2SB141性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SB141封装形式:直插封装
2SB141极限工作电压:60V
2SB141最大电流允许值:1.5A
2SB141最大工作频率:<1MHZ或未知
2SB141引脚数:2
2SB141最大耗散功率:12W
2SB141放大倍数:
2SB141图片代号:E-44
2SB141vtest:60
2SB141htest:999900
- 2SB141atest:1.5
2SB141wtest:12
2SB141代换 2SB141用什么型号代替:AD149,AD166,AD167,2N2139,2N2144,3AD50B,
2SB141价格
参考价格:¥1.6523
型号:2SB1412TLQ 品牌:Rohm 备注:这里有2SB141多少钱,2024年最近7天走势,今日出价,今日竞价,2SB141批发/采购报价,2SB141行情走势销售排行榜,2SB141报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
TRANSISTOR(SWITCHING,HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS) SwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=1500(min)(VCE=−3V,IC=−1A) •Lowsaturationvoltage:VCE(sat)=−1.5V(max)(IC=−1A) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage APPLICATIONS •Switchingapplications •Hammerdrive,pulsemotordriveapplications | SAVANTIC Savantic, Inc. | |||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-100V(Min) •HighDCCurrentGain- :hFE=1500(Min)@(VCE=-3V,lc=-1A) •LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(lc=-1A,IB=-2mA) APPLICATIONS •Highpowerswitchingapplications. •Hammerdriv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-100V(Min) •HighDCCurrentGain- :hFE=1500(Min)@(VCE=-3V,lc=-1A) •LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(lc=-1A,IB=-2mA) APPLICATIONS •Highpowerswitchingapplications. •Hammerdriv | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Smallandslimpackagemakingiteasytomake2SB1205-usedsetsmaller •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifie | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPtransistorinaTO-252PlasticPackage. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics,complementsthe2SD2118. Applications Mediumpoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES PowerAmplifierApplications | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
PNPSiliconLowFrequencyTransistor Features 1)LowVCE(sat). 2)ExcellentDCcurrentgaincharacteristics 3)Complementsthe2SD2118 | SECOS SeCoS Halbleitertechnologie GmbH | |||
LowFrequencyTransistor Features ●LowVCE(sat). ●PNPsilicontransistor. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
LowFrequencyTransistor(-20V,-5A) Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNPEPITAXIALPLANARTRANSISTOR Features: *ExcellentDCCurrentGainCharacteristics *LowVCE(Sat) | WEITRONWEITRON 威堂電子科技 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
SiliconPNPepitaxialplanartype Forlow-frequencydriver/highpoweramplification Complementaryto2SD2134 ■Features •ExcellentcurrentICcharacteristicsofforwardcurrenttransferratiohFEvs.collector •HightransitionfrequencyfT •Allowingautomaticinsertionwithradialtaping | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconPNPepitaxialplanartype Forlow-frequencypoweramplification Complementaryto2SD2136 ■Features •HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity •Lowcollector-emittersaturationvoltageVCE(sat) •Allowingautomaticinsertionwithradialtaping | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconPNPepitaxialplanartype(Forpoweramplification) SiliconPNPepitaxialplanartype Forpoweramplification Complementaryto2SD2137and2SD2137A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Allowingautomaticinsertionwithradialtaping | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconPNPepitaxialplanartype(Forpoweramplification) SiliconPNPepitaxialplanartype Forpoweramplification Complementaryto2SD2137and2SD2137A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Allowingautomaticinsertionwithradialtaping | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconPNPepitaxialplanartypeDarlington(Forpoweramplification) SiliconPNPepitaxialplanartypedarlington Forpoweramplification Complementaryto2SD2138and2SD2138A ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingautomaticinsertionwithradialtaping | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconPNPepitaxialplanartypeDarlington(Forpoweramplification) SiliconPNPepitaxialplanartypedarlington Forpoweramplification Complementaryto2SD2138and2SD2138A ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingautomaticinsertionwithradialtaping | PanasonicPanasonic Corporation 松下松下电器 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3PLpackage •Wideareaofsafeoperation •Lowcollectorsaturationvoltage APPLICATIONS •Forlowfrequencyandhighpoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
iscSiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)cEo=-160V(Min) •WideAreaofSafeOperation APPLICATIONS •Poweramplifierapplications •OptimumfortheoutputstageofaHiFiaudioamplifier | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)cEo=-160V(Min) •WideAreaofSafeOperation APPLICATIONS •Poweramplifierapplications •OptimumfortheoutputstageofaHiFiaudioamplifier | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:219.12 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPTripleDiffusedType 文件:148.31 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconPNPTripleDiffusedType 文件:148.31 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
Lowfrequencytransistor(−20V,−5A) 文件:139.65 Kbytes Page:5 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Lowfrequencytransistor(−20V,−5A) 文件:192.32 Kbytes Page:4 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR 文件:174.96 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
Lowfrequencytransistor(−20V,−5A) 文件:192.32 Kbytes Page:4 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR 文件:174.96 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PNPPlasticEncapsulatedTransistor 文件:428.97 Kbytes Page:2 Pages | SECOS SeCoS Halbleitertechnologie GmbH | |||
HIGHVOLTAGESWITCHINGTRANSISTOR 文件:192.02 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR 文件:192.02 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR 文件:174.96 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR 文件:192.02 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR 文件:192.02 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR 文件:174.96 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGESWITCHINGTRANSISTOR 文件:192.02 Kbytes Page:5 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PNPSiliconEpitaxialTransistors 文件:653.23 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPSiliconEpitaxialTransistors 文件:653.23 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS PNP 30V 5A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPSiliconEpitaxialTransistors 文件:653.23 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS PNP 30V 5A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
Lowfrequencytransistor(??0V,??A) 文件:135.55 Kbytes Page:4 Pages | LittelfuseLittelfuse Inc. 力特力特公司 | |||
SiliconPNPPowerTransistors 文件:182.07 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. |
2SB141产品属性
- 类型
描述
- 型号
2SB141
- 制造商
ROHM Semiconductor
- 功能描述
5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PANASONIC/松下 |
22+ |
MT-3-AT1 |
100000 |
代理渠道/只做原装/可含税 |
|||
PANASONIC/松下 |
24+ |
TO-126 |
990000 |
明嘉莱只做原装正品现货 |
|||
PANASON |
2020+ |
TO-126F |
194 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
PANASON/松下 |
23+ |
NA/ |
194 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PANASONIC |
22+ |
MT-3-AT1 |
3200 |
||||
MAT |
21+ |
TO-220F |
1450 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Panasonic |
20+ |
N/A |
1224 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
|||
MAT |
TO-220F |
608900 |
原包原标签100%进口原装常备现货! |
||||
PANASONIC/松下 |
2022 |
TO-126F |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
03+ |
5000 |
2SB141规格书下载地址
2SB141参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB1435
- 2SB1434
- 2SB1432
- 2SB1431
- 2SB1430
- 2SB1429
- 2SB1428
- 2SB1427
- 2SB1426
- 2SB1425
- 2SB1424
- 2SB1423
- 2SB1422
- 2SB1421
- 2SB1420
- 2SB142
- 2SB1419
- 2SB1418A
- 2SB1418
- 2SB1417A
- 2SB1417
- 2SB1416
- 2SB1415
- 2SB1414
- 2SB1413
- 2SB1412(F5)
- 2SB1412
- 2SB1411
- 2SB1409L,S
- 2SB1409
- 2SB1407L,S
- 2SB1407
- 2SB1406
- 2SB1405
- 2SB1404
- 2SB1403
- 2SB1402
- 2SB1401
- 2SB1400
- 2SB140
- 2SB14
- 2SB1399
- 2SB1398
- 2SB1397
- 2SB1396
- 2SB1395
- 2SB1394
- 2SB1393A
- 2SB1393
- 2SB1392
- 2SB1391
- 2SB1390
- 2SB1389
2SB141数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80