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2SB141晶体管资料

2SB141别名：2SB141三极管、2SB141晶体管、2SB141晶体三极管
2SB141生产厂家：日本索尼公司
2SB141制作材料：Ge-PNP
2SB141性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SB141封装形式：直插封装
2SB141极限工作电压：60V
2SB141最大电流允许值：1.5A
2SB141最大工作频率：<1MHZ或未知
2SB141引脚数：2
2SB141最大耗散功率：12W
2SB141放大倍数：
2SB141图片代号：E-44
2SB141vtest：60
2SB141htest：999900
2SB141atest：1.5
2SB141wtest：12

2SB141代换 2SB141用什么型号代替：AD149,AD166,AD167,2N2139,2N2144,3AD50B,

2SB141价格

参考价格：￥1.6523

型号：2SB1412TLQ 品牌：Rohm 备注：这里有2SB141多少钱，2025年最近7天走势，今日出价，今日竞价，2SB141批发/采购报价，2SB141行情走势销售排行榜，2SB141报价。

型号	功能描述	生产厂家&企业
2SB1411	TRANSISTOR(SWITCHING,HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS) SwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=1500(min)(VCE=−3V,IC=−1A) •Lowsaturationvoltage:VCE(sat)=−1.5V(max)(IC=−1A)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
2SB1411	SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage APPLICATIONS •Switchingapplications •Hammerdrive,pulsemotordriveapplications	SAVANTIC Savantic, Inc.
2SB1411	iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-100V(Min) •HighDCCurrentGain- :hFE=1500(Min)@(VCE=-3V,lc=-1A) •LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(lc=-1A,IB=-2mA) APPLICATIONS •Highpowerswitchingapplications. •Hammerdriv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1411	SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-100V(Min) •HighDCCurrentGain- :hFE=1500(Min)@(VCE=-3V,lc=-1A) •LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(lc=-1A,IB=-2mA) APPLICATIONS •Highpowerswitchingapplications. •Hammerdriv	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
2SB1412	iscSiliconNPNPowerTransistor DESCRIPTION •Smallandslimpackagemakingiteasytomake2SB1205-usedsetsmaller •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifie	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1412	SiliconPNPtransistorinaTO-252PlasticPackage. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics,complementsthe2SD2118. Applications Mediumpoweramplifierapplications.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司
2SB1412	TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES PowerAmplifierApplications	JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司
2SB1412	PNPSiliconLowFrequencyTransistor Features 1)LowVCE(sat). 2)ExcellentDCcurrentgaincharacteristics 3)Complementsthe2SD2118	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司
2SB1412	LowFrequencyTransistor Features ●LowVCE(sat). ●PNPsilicontransistor.	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司
2SB1412	LowFrequencyTransistor(-20V,-5A) Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.	ROHMRohm 罗姆罗姆半导体集团
2SB1412	PNPEPITAXIALPLANARTRANSISTOR Features: ExcellentDCCurrentGainCharacteristics LowVCE(Sat)	WEITRON Weitron Technology
2SB1412	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412	SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1412	SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1412-251	SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1412-252	SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1412L-TN3-B-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412L-TN3-C-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412L-TN3-E-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412L-TN3-F-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412-TN3-B-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412-TN3-C-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412-TN3-E-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412-TN3-F-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1414	SiliconPNPepitaxialplanartype Forlow-frequencydriver/highpoweramplification Complementaryto2SD2134 ■Features •ExcellentcurrentICcharacteristicsofforwardcurrenttransferratiohFEvs.collector •HightransitionfrequencyfT •Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下电器
2SB1416	SiliconPNPepitaxialplanartype Forlow-frequencypoweramplification Complementaryto2SD2136 ■Features •HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity •Lowcollector-emittersaturationvoltageVCE(sat) •Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下电器
2SB1417	SiliconPNPepitaxialplanartype(Forpoweramplification) SiliconPNPepitaxialplanartype Forpoweramplification Complementaryto2SD2137and2SD2137A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下电器
2SB1417A	SiliconPNPepitaxialplanartype(Forpoweramplification) SiliconPNPepitaxialplanartype Forpoweramplification Complementaryto2SD2137and2SD2137A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下电器
2SB1418	SiliconPNPepitaxialplanartypeDarlington(Forpoweramplification) SiliconPNPepitaxialplanartypedarlington Forpoweramplification Complementaryto2SD2138and2SD2138A ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下电器
2SB1418A	SiliconPNPepitaxialplanartypeDarlington(Forpoweramplification) SiliconPNPepitaxialplanartypedarlington Forpoweramplification Complementaryto2SD2138and2SD2138A ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下电器
2SB1419	SiliconPNPPowerTransistors DESCRIPTION •WithTO-3PLpackage •Wideareaofsafeoperation •Lowcollectorsaturationvoltage APPLICATIONS •Forlowfrequencyandhighpoweramplifierapplications	SAVANTIC Savantic, Inc.
2SB1419	iscSiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)cEo=-160V(Min) •WideAreaofSafeOperation APPLICATIONS •Poweramplifierapplications •OptimumfortheoutputstageofaHiFiaudioamplifier	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1419	SiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)cEo=-160V(Min) •WideAreaofSafeOperation APPLICATIONS •Poweramplifierapplications •OptimumfortheoutputstageofaHiFiaudioamplifier	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
2SB1411	SiliconPNPPowerTransistors 文件：219.12 Kbytes Page：3 Pages	SAVANTIC Savantic, Inc.
2SB1411	SiliconPNPTripleDiffusedType 文件：148.31 Kbytes Page：5 Pages	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
2SB1411_06	SiliconPNPTripleDiffusedType 文件：148.31 Kbytes Page：5 Pages	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
2SB1412	Lowfrequencytransistor(−20V,−5A) 文件：139.65 Kbytes Page：5 Pages	ROHMRohm 罗姆罗姆半导体集团
2SB1412	Lowfrequencytransistor(−20V,−5A) 文件：192.32 Kbytes Page：4 Pages	ROHMRohm 罗姆罗姆半导体集团
2SB1412	HIGHVOLTAGESWITCHINGTRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412_09	Lowfrequencytransistor(−20V,−5A) 文件：192.32 Kbytes Page：4 Pages	ROHMRohm 罗姆罗姆半导体集团
2SB1412_10	HIGHVOLTAGESWITCHINGTRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412_15	PNPPlasticEncapsulatedTransistor 文件：428.97 Kbytes Page：2 Pages	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司
2SB1412_15	HIGHVOLTAGESWITCHINGTRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412G-X-TN3-R	HIGHVOLTAGESWITCHINGTRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412G-X-TN3-R	HIGHVOLTAGESWITCHINGTRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412G-X-TN3-T	HIGHVOLTAGESWITCHINGTRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412L-X-TN3-R	HIGHVOLTAGESWITCHINGTRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412L-X-TN3-R	HIGHVOLTAGESWITCHINGTRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412L-X-TN3-T	HIGHVOLTAGESWITCHINGTRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412-P	PNPSiliconEpitaxialTransistors 文件：653.23 Kbytes Page：4 Pages	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2SB1412-Q	PNPSiliconEpitaxialTransistors 文件：653.23 Kbytes Page：4 Pages	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2SB1412-Q-TP	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）描述：TRANS PNP 30V 5A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2SB1412-R	PNPSiliconEpitaxialTransistors 文件：653.23 Kbytes Page：4 Pages	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2SB1412-R-TP	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）描述：TRANS PNP 30V 5A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2SB1412TLR	Lowfrequencytransistor(??0V,??A) 文件：135.55 Kbytes Page：4 Pages	Littelfuselittelfuse 力特力特公司
2SB1419	SiliconPNPPowerTransistors 文件：182.07 Kbytes Page：3 Pages	SAVANTIC Savantic, Inc.

2SB141产品属性

类型
描述
型号
2SB141
制造商
ROHM Semiconductor
功能描述
5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR

2SB141供应商更多...

更新时间：2025-6-17 9:40:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市富芯乐电子科技有限公司	2SB1417	PANASONIC	24+	MT-3-AT1	3200	只做原装正品现货欢迎来电查询15919825718	询价
深圳市科芯源微电子有限公司	2SB1417	PANASONIC/松下	25+	TO-126	54648	百分百原装现货实单必成欢迎询价	询价
深圳市得捷芯城科技有限公司	2SB1417P	PANASON/松下	24+	NA/	194	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市创新迹电子有限公司	2SB1417	PANASONIC/松下	22+	TO-126	12000	只做原装、原厂优势渠道、假一赔十	询价
深圳市明嘉莱科技有限公司	2SB1417	PANASONIC/松下	24+	TO-126	990000	明嘉莱只做原装正品现货	询价
深圳市博浩通科技有限公司	2SB1417APA	PANASONIC	23+	MT-4	7750	全新原装优势	询价
上海磐岳电子有限公司	2SB1417	SANYO	2023+	TO-220F	58000	进口原装,现货热卖	询价
深圳市安富世纪电子有限公司	2SB1417	MAT	23+	TO-220F	1450	全新原装正品现货,支持订货	询价
深圳市中福国际管理有限公司	2SB1417	PANASONIC/松下	02+	TO-126	36	只有原装正品,老板发话合适就出	询价
深圳市卓越微芯电子有限公司	2SB1417P	PANASON	2020+	TO-126F	194	百分百原装正品真实公司现货库存本公司只做原装可	询价

2SB141芯片相关品牌

2SB141规格书下载地址

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2SB141数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-14
2SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-24
2SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-1
2SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-30
2SB649 MOS
www.jskj-ic.com
2021-9-10
2SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下：·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息）·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9

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2SB141晶体管资料

2SB141价格

2SB141产品属性

2SB141供应商更多...

2SB141芯片相关品牌

2SB141规格书下载地址

2SB141参数引脚图相关

2SB141数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SB776L-TO252R-P-TG_UTC代理商

2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引