2SB141晶体管资料

  • 2SB141别名:2SB141三极管、2SB141晶体管、2SB141晶体三极管

  • 2SB141生产厂家:日本索尼公司

  • 2SB141制作材料:Ge-PNP

  • 2SB141性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SB141封装形式:直插封装

  • 2SB141极限工作电压:60V

  • 2SB141最大电流允许值:1.5A

  • 2SB141最大工作频率:<1MHZ或未知

  • 2SB141引脚数:2

  • 2SB141最大耗散功率:12W

  • 2SB141放大倍数

  • 2SB141图片代号:E-44

  • 2SB141vtest:60

  • 2SB141htest:999900

  • 2SB141atest:1.5

  • 2SB141wtest:12

  • 2SB141代换 2SB141用什么型号代替:AD149,AD166,AD167,2N2139,2N2144,3AD50B,

2SB141价格

参考价格:¥1.6523

型号:2SB1412TLQ 品牌:Rohm 备注:这里有2SB141多少钱,2024年最近7天走势,今日出价,今日竞价,2SB141批发/采购报价,2SB141行情走势销售排行榜,2SB141报价。
型号 功能描述 生产厂家&企业 LOGO 操作

TRANSISTOR(SWITCHING,HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS)

SwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=1500(min)(VCE=−3V,IC=−1A) •Lowsaturationvoltage:VCE(sat)=−1.5V(max)(IC=−1A)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage APPLICATIONS •Switchingapplications •Hammerdrive,pulsemotordriveapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-100V(Min) •HighDCCurrentGain- :hFE=1500(Min)@(VCE=-3V,lc=-1A) •LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(lc=-1A,IB=-2mA) APPLICATIONS •Highpowerswitchingapplications. •Hammerdriv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-100V(Min) •HighDCCurrentGain- :hFE=1500(Min)@(VCE=-3V,lc=-1A) •LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(lc=-1A,IB=-2mA) APPLICATIONS •Highpowerswitchingapplications. •Hammerdriv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconNPNPowerTransistor

DESCRIPTION •Smallandslimpackagemakingiteasytomake2SB1205-usedsetsmaller •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifie

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPtransistorinaTO-252PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics,complementsthe2SD2118. Applications Mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES PowerAmplifierApplications

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

PNPSiliconLowFrequencyTransistor

Features 1)LowVCE(sat). 2)ExcellentDCcurrentgaincharacteristics 3)Complementsthe2SD2118

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

LowFrequencyTransistor

Features ●LowVCE(sat). ●PNPsilicontransistor.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

LowFrequencyTransistor(-20V,-5A)

Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

PNPEPITAXIALPLANARTRANSISTOR

Features: *ExcellentDCCurrentGainCharacteristics *LowVCE(Sat)

WEITRONWEITRON

威堂電子科技

WEITRON

HIGHVOLTAGESWITCHINGTRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

SiliconPNPepitaxialplanartype

Forlow-frequencydriver/highpoweramplification Complementaryto2SD2134 ■Features •ExcellentcurrentICcharacteristicsofforwardcurrenttransferratiohFEvs.collector •HightransitionfrequencyfT •Allowingautomaticinsertionwithradialtaping

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPepitaxialplanartype

Forlow-frequencypoweramplification Complementaryto2SD2136 ■Features •HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity •Lowcollector-emittersaturationvoltageVCE(sat) •Allowingautomaticinsertionwithradialtaping

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPepitaxialplanartype(Forpoweramplification)

SiliconPNPepitaxialplanartype Forpoweramplification Complementaryto2SD2137and2SD2137A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Allowingautomaticinsertionwithradialtaping

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPepitaxialplanartype(Forpoweramplification)

SiliconPNPepitaxialplanartype Forpoweramplification Complementaryto2SD2137and2SD2137A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Allowingautomaticinsertionwithradialtaping

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPepitaxialplanartypeDarlington(Forpoweramplification)

SiliconPNPepitaxialplanartypedarlington Forpoweramplification Complementaryto2SD2138and2SD2138A ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingautomaticinsertionwithradialtaping

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPepitaxialplanartypeDarlington(Forpoweramplification)

SiliconPNPepitaxialplanartypedarlington Forpoweramplification Complementaryto2SD2138and2SD2138A ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingautomaticinsertionwithradialtaping

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PLpackage •Wideareaofsafeoperation •Lowcollectorsaturationvoltage APPLICATIONS •Forlowfrequencyandhighpoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)cEo=-160V(Min) •WideAreaofSafeOperation APPLICATIONS •Poweramplifierapplications •OptimumfortheoutputstageofaHiFiaudioamplifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)cEo=-160V(Min) •WideAreaofSafeOperation APPLICATIONS •Poweramplifierapplications •OptimumfortheoutputstageofaHiFiaudioamplifier

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistors

文件:219.12 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPTripleDiffusedType

文件:148.31 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconPNPTripleDiffusedType

文件:148.31 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Lowfrequencytransistor(−20V,−5A)

文件:139.65 Kbytes Page:5 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Lowfrequencytransistor(−20V,−5A)

文件:192.32 Kbytes Page:4 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

HIGHVOLTAGESWITCHINGTRANSISTOR

文件:174.96 Kbytes Page:5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

Lowfrequencytransistor(−20V,−5A)

文件:192.32 Kbytes Page:4 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

HIGHVOLTAGESWITCHINGTRANSISTOR

文件:174.96 Kbytes Page:5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

PNPPlasticEncapsulatedTransistor

文件:428.97 Kbytes Page:2 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

HIGHVOLTAGESWITCHINGTRANSISTOR

文件:192.02 Kbytes Page:5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

文件:192.02 Kbytes Page:5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

文件:174.96 Kbytes Page:5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

文件:192.02 Kbytes Page:5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

文件:192.02 Kbytes Page:5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

文件:174.96 Kbytes Page:5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGESWITCHINGTRANSISTOR

文件:192.02 Kbytes Page:5 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

PNPSiliconEpitaxialTransistors

文件:653.23 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PNPSiliconEpitaxialTransistors

文件:653.23 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS PNP 30V 5A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PNPSiliconEpitaxialTransistors

文件:653.23 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS PNP 30V 5A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

Lowfrequencytransistor(??0V,??A)

文件:135.55 Kbytes Page:4 Pages

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

SiliconPNPPowerTransistors

文件:182.07 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

2SB141产品属性

  • 类型

    描述

  • 型号

    2SB141

  • 制造商

    ROHM Semiconductor

  • 功能描述

    5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR

更新时间:2024-4-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANASONIC/松下
22+
MT-3-AT1
100000
代理渠道/只做原装/可含税
PANASONIC/松下
24+
TO-126
990000
明嘉莱只做原装正品现货
PANASON
2020+
TO-126F
194
百分百原装正品 真实公司现货库存 本公司只做原装 可
PANASON/松下
23+
NA/
194
优势代理渠道,原装正品,可全系列订货开增值税票
PANASONIC
22+
MT-3-AT1
3200
MAT
21+
TO-220F
1450
优势代理渠道,原装正品,可全系列订货开增值税票
Panasonic
20+
N/A
1224
加我qq或微信,了解更多详细信息,体验一站式购物
MAT
TO-220F
608900
原包原标签100%进口原装常备现货!
PANASONIC/松下
2022
TO-126F
80000
原装现货,OEM渠道,欢迎咨询
03+
5000

2SB141芯片相关品牌

  • ANACHIP
  • BOTHHAND
  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • nxp
  • POWERBOX
  • RECTRON
  • TAI-TECH
  • Winbond

2SB141数据表相关新闻