2SB1417晶体三极管规格书应用电路批发供应采购-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第802页 > 2SB141

2SB141晶体管资料

2SB141别名：2SB141三极管、2SB141晶体管、2SB141晶体三极管
2SB141生产厂家：日本索尼公司
2SB141制作材料：Ge-PNP
2SB141性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SB141封装形式：直插封装
2SB141极限工作电压：60V
2SB141最大电流允许值：1.5A
2SB141最大工作频率：<1MHZ或未知
2SB141引脚数：2
2SB141最大耗散功率：12W
2SB141放大倍数：
2SB141图片代号：E-44
2SB141vtest：60
2SB141htest：999900
2SB141atest：1.5
2SB141wtest：12

2SB141代换 2SB141用什么型号代替：AD149,AD166,AD167,2N2139,2N2144,3AD50B,

2SB141价格

参考价格：￥1.6523

型号：2SB1412TLQ 品牌：Rohm 备注：这里有2SB141多少钱，2025年最近7天走势，今日出价，今日竞价，2SB141批发/采购报价，2SB141行情走势销售排行榜，2SB141报价。

型号	功能描述	生产厂家企业	LOGO
2SB1411	TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A)	TOSHIBA 东芝	TOSHIBA
2SB1411	isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, lc= -1A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -1A, IB=-2mA) APPLICATIONS • High power switching applications. • Hammer driv	ISC 无锡固电	ISC
2SB1411	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • Switching applications • Hammer drive ,pulse motor drive applications	SAVANTIC	SAVANTIC
2SB1411	Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, lc= -1A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -1A, IB=-2mA) APPLICATIONS • High power switching applications. • Hammer driv	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1412	PNP Silicon Low Frequency Transistor Features 1) Low VCE(sat). 2) Excellent DC current gain characteristics 3) Complements the 2SD2118	SECOS 喜可士	SECOS
2SB1412	isc Silicon NPN Power Transistor DESCRIPTION • Small and slim package making it easy to make 2SB1205-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifie	ISC 无锡固电	ISC
2SB1412	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412	TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power Amplifier Applications	JIANGSU 长电科技	JIANGSU
2SB1412	Low Frequency Transistor Features ● Low VCE(sat). ● PNP silicon transistor.	KEXIN 科信电子	KEXIN
2SB1412	Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118. Applications Medium power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB1412	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412	PNP EPITAXIAL PLANAR TRANSISTOR Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat)	WEITRON	WEITRON
2SB1412	Low Frequency Transistor(-20V,-5A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1412-251	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412-252	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412L-TN3-B-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412L-TN3-C-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412L-TN3-E-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412L-TN3-F-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-B-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-C-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-E-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-F-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1414	Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 ■Features •Excellent current ICcharacteristics of forward current transfer ratio hFE vs. collector •High transition frequency fT •Allowing automatic insertion with radial taping	Panasonic 松下	Panasonic
2SB1416	Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping	Panasonic 松下	Panasonic
2SB1417	Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping	Panasonic 松下	Panasonic
2SB1417A	Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping	Panasonic 松下	Panasonic
2SB1418	Silicon PNP epitaxial planar type Darlington(For power amplification) Silicon PNP epitaxial planar type darlington For power amplification Complementary to 2SD2138 and 2SD2138A ■ Features • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping	Panasonic 松下	Panasonic
2SB1418A	Silicon PNP epitaxial planar type Darlington(For power amplification) Silicon PNP epitaxial planar type darlington For power amplification Complementary to 2SD2138 and 2SD2138A ■ Features • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping	Panasonic 松下	Panasonic
2SB1419	isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)cEo=-160V(Min) • Wide Area of Safe Operation APPLICATIONS • Power amplifier applications • Optimum for the output stage of a HiFi audio amplifier	ISC 无锡固电	ISC
2SB1419	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)cEo=-160V(Min) • Wide Area of Safe Operation APPLICATIONS • Power amplifier applications • Optimum for the output stage of a HiFi audio amplifier	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1419	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Wide area of safe operation • Low collector saturation voltage APPLICATIONS • For low frequency and high power amplifier applications	SAVANTIC	SAVANTIC
2SB1411	Silicon PNP Power Transistors 文件：219.12 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1411	Silicon PNP Triple Diffused Type 文件：148.31 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SB1411_06	Silicon PNP Triple Diffused Type 文件：148.31 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SB1412	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412	Low frequency transistor (−20V, −5A) 文件：139.65 Kbytes Page：5 Pages	ROHM 罗姆	ROHM
2SB1412	Low frequency transistor (−20V,−5A) 文件：192.32 Kbytes Page：4 Pages	ROHM 罗姆	ROHM
2SB1412	20V,5A,Medium Power PNP Bipolar Transistor	GALAXY 银河微电	GALAXY
2SB1412	Bipolar Transistor	UTC 友顺	UTC
2SB1412	晶体管	JSCJ 长晶科技	JSCJ
2SB1412_09	Low frequency transistor (−20V,−5A) 文件：192.32 Kbytes Page：4 Pages	ROHM 罗姆	ROHM
2SB1412_10	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412_15	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412_15	PNP Plastic Encapsulated Transistor 文件：428.97 Kbytes Page：2 Pages	SECOS 喜可士	SECOS
2SB1412G-X-TN3-R	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412G-X-TN3-R	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412G-X-TN3-T	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412L-X-TN3-R	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412L-X-TN3-R	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412L-X-TN3-T	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412-P	PNP Silicon Epitaxial Transistors 文件：653.23 Kbytes Page：4 Pages	MCC	MCC
2SB1412-Q	PNP Silicon Epitaxial Transistors 文件：653.23 Kbytes Page：4 Pages	MCC	MCC
2SB1412-Q-TP	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）描述：TRANS PNP 30V 5A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
2SB1412-R	PNP Silicon Epitaxial Transistors 文件：653.23 Kbytes Page：4 Pages	MCC	MCC
2SB1412-R-TP	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）描述：TRANS PNP 30V 5A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
2SB1412TLR	Low frequency transistor (??0V,??A) 文件：135.55 Kbytes Page：4 Pages	Littelfuse 力特	Littelfuse
2SB1419	Silicon PNP Power Transistors 文件：182.07 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC

2SB141产品属性

类型
描述
型号
2SB141
制造商
ROHM Semiconductor
功能描述
5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR

2SB141供应商更多...

更新时间：2025-12-25 12:05:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海磐岳电子有限公司	2SB1417	SANYO	2023+	TO-220F	58000	进口原装,现货热卖	询价
深圳市得捷芯城科技有限公司	2SB1417P	PANASON/松下	24+	NA/	194	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市安富世纪电子有限公司	2SB1417-P	PANASONIC/松下	23+	6	6500	专注配单,只做原装进口现货	询价
深圳市威尔健半导体有限公司	2SB1417P	PANASONIC/松下	23+	TO-126F	50000	全新原装正品现货,支持订货	询价
深圳市一线半导体有限公司	2SB1417		24+		5000		询价
深圳市科芯源微电子有限公司	2SB1417	PANASONIC/松下	25+	TO-126	54648	百分百原装现货实单必成欢迎询价	询价
深圳市富芯乐电子科技有限公司	2SB1417	PANASONIC	24+	MT-3-AT1	3200	只做原装正品现货欢迎来电查询15919825718	询价
深圳市河锋鑫科技有限公司	2SB1417	MAT	22+	TO-220F	6000	十年配单,只做原装	询价
深圳市明嘉莱科技有限公司	2SB1417	PANASONIC/松下	24+	TO-126	990000	明嘉莱只做原装正品现货	询价
深圳市卓越微芯电子有限公司	2SB1417P	PANASON	25+	TO-126F	194	百分百原装正品真实公司现货库存本公司只做原装可	询价

2SB141芯片相关品牌

2SB141规格书下载地址

2SB141参数引脚图相关

2SB141数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-14
2SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-24
2SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-1
2SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-30
2SB649 MOS
www.jskj-ic.com
2021-9-10
2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

2SB141晶体管资料

2SB141价格

2SB141产品属性

2SB141供应商更多...

2SB141芯片相关品牌

2SB141规格书下载地址

2SB141参数引脚图相关

2SB141数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SB776L-TO252R-P-TG_UTC代理商

2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引