PNP Silicon Epitaxial Transistors

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PNP EPITAXIAL PLANAR TRANSISTOR

Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat)

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

Low Frequency Transistor

Features ● Low VCE(sat). ● PNP silicon transistor.

PNP Silicon Low Frequency Transistor

Features 1) Low VCE(sat). 2) Excellent DC current gain characteristics 3) Complements the 2SD2118

Low frequency transistor (−20V, −5A)

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP 30V 5A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个