2SB1411晶体管资料
2SB1411别名：2SB1411三极管、2SB1411晶体管、2SB1411晶体三极管
2SB1411生产厂家：
2SB1411制作材料：Si-P+Darl+Di
2SB1411性质：开关管 （S）_功率放大 （L）
2SB1411封装形式：直插封装
2SB1411极限工作电压：100V
2SB1411最大电流允许值：2A
2SB1411最大工作频率：<1MHZ或未知
2SB1411引脚数：3
2SB1411最大耗散功率：20W
2SB1411放大倍数：β=1500-15000
2SB1411图片代号：B-10
2SB1411vtest：100
2SB1411htest：999900
- 2SB1411atest：2
2SB1411wtest：20
2SB1411代换 2SB1411用什么型号代替：BDT60BF,2SB1024,2SB1226,2SB1282,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1411 | isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, lc= -1A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -1A, IB=-2mA) APPLICATIONS • High power switching applications. • Hammer driv | ISC 无锡固电 |   | |
2SB1411 | Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, lc= -1A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -1A, IB=-2mA) APPLICATIONS • High power switching applications. • Hammer driv | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2SB1411 | Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • Switching applications • Hammer drive ,pulse motor drive applications | SAVANTIC | | |
2SB1411 | TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A) | TOSHIBA 东芝 | | |
2SB1411 | Silicon PNP Triple Diffused Type 文件：148.31 Kbytes Page：5 Pages | TOSHIBA 东芝 | | |
2SB1411 | Silicon PNP Power Transistors 文件：219.12 Kbytes Page：3 Pages | SAVANTIC | | |
2SB1411 | TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS | TOSHIBA 东芝 | | |
Silicon PNP Triple Diffused Type 文件：148.31 Kbytes Page：5 Pages | TOSHIBA 东芝 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM |
23+ |
TO252 |
1600 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
ROHM |
08PB |
SOT252/2.5 |
1570 |
全新原装进口自己库存优势 |
|||
CJ |
20+ |
TO252 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
ROHM/罗姆 |
25+ |
PBFREE |
880000 |
明嘉莱只做原装正品现货 |
|||
CJ/长电 |
21+ |
TO-251 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
Rohm(罗姆) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
sot-252 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ROHM |
2016+ |
TO-252 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM/罗姆 |
22+ |
TO252 |
8000 |
原装正品支持实单 |
2SB1411芯片相关品牌
2SB1411规格书下载地址
2SB1411参数引脚图相关
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- 2SB1391
- 2SB1390
- 2SB1389
2SB1411数据表相关新闻
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支持实单 价格优势 有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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