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2SB1412晶体管资料

2SB1412别名：2SB1412三极管、2SB1412晶体管、2SB1412晶体三极管
2SB1412生产厂家：TOY
2SB1412制作材料：Si-PNP
2SB1412性质：低频或音频放大（LF）_功率放大（L）
2SB1412封装形式：直插封装
2SB1412极限工作电压：20V
2SB1412最大电流允许值：10A
2SB1412最大工作频率：<1MHZ或未知
2SB1412引脚数：3
2SB1412最大耗散功率：10W
2SB1412放大倍数：
2SB1412图片代号：H-65
2SB1412vtest：20
2SB1412htest：999900
2SB1412atest：10
2SB1412wtest：10

2SB1412代换 2SB1412用什么型号代替：2SA1242,2SA1385,2SB1205,2SB1447,

2SB1412价格

参考价格：￥1.6523

型号：2SB1412TLQ 品牌：Rohm 备注：这里有2SB1412多少钱，2025年最近7天走势，今日出价，今日竞价，2SB1412批发/采购报价，2SB1412行情走势销售排行榜，2SB1412报价。

型号	功能描述	生产厂家&企业	LOGO
2SB1412	Low Frequency Transistor(-20V,-5A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1412	PNP EPITAXIAL PLANAR TRANSISTOR Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat)	WEITRON	WEITRON
2SB1412	TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power Amplifier Applications	JIANGSU 长电科技	JIANGSU
2SB1412	isc Silicon NPN Power Transistor DESCRIPTION • Small and slim package making it easy to make 2SB1205-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifie	ISC 无锡固电	ISC
2SB1412	Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118. Applications Medium power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB1412	Low Frequency Transistor Features ● Low VCE(sat). ● PNP silicon transistor.	KEXIN 科信电子	KEXIN
2SB1412	PNP Silicon Low Frequency Transistor Features 1) Low VCE(sat). 2) Excellent DC current gain characteristics 3) Complements the 2SD2118	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1412	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412	Low frequency transistor (−20V, −5A) 文件：139.65 Kbytes Page：5 Pages	ROHM 罗姆	ROHM
2SB1412	Low frequency transistor (−20V,−5A) 文件：192.32 Kbytes Page：4 Pages	ROHM 罗姆	ROHM
2SB1412	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412-251	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412-252	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412L-TN3-B-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412L-TN3-C-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412L-TN3-E-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412L-TN3-F-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-B-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-C-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-E-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-F-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412_09	Low frequency transistor (−20V,−5A) 文件：192.32 Kbytes Page：4 Pages	ROHM 罗姆	ROHM
2SB1412_10	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412_15	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412_15	PNP Plastic Encapsulated Transistor 文件：428.97 Kbytes Page：2 Pages	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1412G-X-TN3-R	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412G-X-TN3-R	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412G-X-TN3-T	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412L-X-TN3-R	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412L-X-TN3-R	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412L-X-TN3-T	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412-P	PNP Silicon Epitaxial Transistors 文件：653.23 Kbytes Page：4 Pages	MCC 美微科	MCC
2SB1412-Q	PNP Silicon Epitaxial Transistors 文件：653.23 Kbytes Page：4 Pages	MCC 美微科	MCC
2SB1412-Q-TP	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）描述：TRANS PNP 30V 5A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC 美微科	MCC
2SB1412-R	PNP Silicon Epitaxial Transistors 文件：653.23 Kbytes Page：4 Pages	MCC 美微科	MCC
2SB1412-R-TP	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）描述：TRANS PNP 30V 5A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC 美微科	MCC
2SB1412TLR	Low frequency transistor (??0V,??A) 文件：135.55 Kbytes Page：4 Pages	Littelfuse 力特	Littelfuse

2SB1412产品属性

类型
描述
型号
2SB1412
制造商
ROHM Semiconductor
功能描述
5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR

2SB1412供应商更多...

更新时间：2025-8-7 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	2SB1412	CJ/长晶	23+	SOT-223	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市金芯世纪电子有限公司	2SB1412TLQ	ROHM/罗姆	22+	SOT-252	100000	代理渠道/只做原装/可含税	询价
深圳市得捷芯城科技有限公司	2SB1412-Q	Rohm(罗姆)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
中天科工半导体（深圳）有限公司	2SB1412	CJ/长电	25+	SOT-223(8R)	20300	CJ/长电原装特价2SB1412即刻询购立享优惠#长期有货	询价
深圳市益百分电子有限公司	2SB1412	ROHM	08PB	SOT252/2.5	1570	全新原装进口自己库存优势	询价
深圳市联世界科技有限公司	2SB1412TLQ	ROHM	24+/25+		2500	原装正品现货库存价优	询价
深圳市科恒伟业电子有限公司	2SB1412-TL-R	ROHM/罗姆	1950+	TO-252	4856	只做原装正品现货!或订货假一赔十!	询价
深圳良洲科技有限公司	2SB1412-R-TP	MICRO COMMERCIAL COMPONENTS	两年内	NA	4500	实单价格可谈	询价
深圳市威雅利发展有限公司	2SB1412TLR	ROHM	1120+	TO-252	830	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市正纳电子有限公司	2SB1412	Rohm(罗姆)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价

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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
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DdatasheetPDF页码索引

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2SB1412晶体管资料

2SB1412价格

2SB1412产品属性

2SB1412供应商更多...

2SB1412芯片相关品牌

2SB1412规格书下载地址

2SB1412参数引脚图相关

2SB1412数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SB776L-TO252R-P-TG_UTC代理商

2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引