2SB1412晶体管资料

  • 2SB1412别名:2SB1412三极管、2SB1412晶体管、2SB1412晶体三极管

  • 2SB1412生产厂家:TOY

  • 2SB1412制作材料:Si-PNP

  • 2SB1412性质:低频或音频放大 (LF)_功率放大 (L)

  • 2SB1412封装形式:直插封装

  • 2SB1412极限工作电压:20V

  • 2SB1412最大电流允许值:10A

  • 2SB1412最大工作频率:<1MHZ或未知

  • 2SB1412引脚数:3

  • 2SB1412最大耗散功率:10W

  • 2SB1412放大倍数

  • 2SB1412图片代号:H-65

  • 2SB1412vtest:20

  • 2SB1412htest:999900

  • 2SB1412atest:10

  • 2SB1412wtest:10

  • 2SB1412代换 2SB1412用什么型号代替:2SA1242,2SA1385,2SB1205,2SB1447,

2SB1412价格

参考价格:¥1.6523

型号:2SB1412TLQ 品牌:Rohm 备注:这里有2SB1412多少钱,2026年最近7天走势,今日出价,今日竞价,2SB1412批发/采购报价,2SB1412行情走势销售排行榜,2SB1412报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SB1412

Low Frequency Transistor(-20V,-5A)

Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

ROHM

罗姆

2SB1412

PNP EPITAXIAL PLANAR TRANSISTOR

Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat)

WEITRON

2SB1412

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power Amplifier Applications

JIANGSU

长电科技

2SB1412

isc Silicon NPN Power Transistor

DESCRIPTION • Small and slim package making it easy to make 2SB1205-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifie

ISC

无锡固电

2SB1412

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118. Applications Medium power amplifier applications.

FOSHAN

蓝箭电子

2SB1412

Low Frequency Transistor

Features ● Low VCE(sat). ● PNP silicon transistor.

KEXIN

科信电子

2SB1412

PNP Silicon Low Frequency Transistor

Features 1) Low VCE(sat). 2) Excellent DC current gain characteristics 3) Complements the 2SD2118

SECOS

喜可士

2SB1412

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

UTC

友顺

2SB1412

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications

ISC

无锡固电

2SB1412

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications

ISC

无锡固电

2SB1412

双极型晶体管

LUGUANG

鲁光电子

2SB1412

20V,5A,Medium Power PNP Bipolar Transistor

GALAXY

银河微电

2SB1412

Bipolar Transistor

UTC

友顺

2SB1412

Low frequency transistor (−20V, −5A)

文件:139.65 Kbytes Page:5 Pages

ROHM

罗姆

2SB1412

Low frequency transistor (−20V,−5A)

文件:192.32 Kbytes Page:4 Pages

ROHM

罗姆

2SB1412

HIGH VOLTAGE SWITCHING TRANSISTOR

文件:174.96 Kbytes Page:5 Pages

UTC

友顺

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications

ISC

无锡固电

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

UTC

友顺

Low frequency transistor (−20V,−5A)

文件:192.32 Kbytes Page:4 Pages

ROHM

罗姆

HIGH VOLTAGE SWITCHING TRANSISTOR

文件:174.96 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

文件:192.02 Kbytes Page:5 Pages

UTC

友顺

PNP Plastic Encapsulated Transistor

文件:428.97 Kbytes Page:2 Pages

SECOS

喜可士

HIGH VOLTAGE SWITCHING TRANSISTOR

文件:174.96 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

文件:192.02 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

文件:192.02 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

文件:174.96 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

文件:192.02 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE SWITCHING TRANSISTOR

文件:192.02 Kbytes Page:5 Pages

UTC

友顺

PNP Silicon Epitaxial Transistors

文件:653.23 Kbytes Page:4 Pages

MCC

PNP Silicon Epitaxial Transistors

文件:653.23 Kbytes Page:4 Pages

MCC

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS PNP 30V 5A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

PNP Silicon Epitaxial Transistors

文件:653.23 Kbytes Page:4 Pages

MCC

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS PNP 30V 5A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

Low frequency transistor (??0V,??A)

文件:135.55 Kbytes Page:4 Pages

LITTELFUSE

力特

2SB1412产品属性

  • 类型

    描述

  • 型号

    2SB1412

  • 制造商

    ROHM Semiconductor

  • 功能描述

    5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR

更新时间:2026-1-28 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
2016+
TO-252
6000
只做原装,假一罚十,公司可开17%增值税发票!
ROHM
23+
SOT252/2.5
20000
全新原装假一赔十
ROHM
13+
SOT252
3151
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MSC
22+
TO-252
100000
代理渠道/只做原装/可含税
CJ/长晶
23+
SOT-223
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
sot-252
23+
NA
15659
振宏微专业只做正品,假一罚百!
ROHM
23+
TO-252
50000
只做原装正品
ROHM
23+
TO252
1600
绝对全新原装!优势供货渠道!特价!请放心订购!
RHOM
24+
TO252/2500
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
ROHM/罗姆
25+
PBFREE
880000
明嘉莱只做原装正品现货

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