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2SB1412晶体管资料

2SB1412别名：2SB1412三极管、2SB1412晶体管、2SB1412晶体三极管
2SB1412生产厂家：TOY
2SB1412制作材料：Si-PNP
2SB1412性质：低频或音频放大（LF）_功率放大（L）
2SB1412封装形式：直插封装
2SB1412极限工作电压：20V
2SB1412最大电流允许值：10A
2SB1412最大工作频率：<1MHZ或未知
2SB1412引脚数：3
2SB1412最大耗散功率：10W
2SB1412放大倍数：
2SB1412图片代号：H-65
2SB1412vtest：20
2SB1412htest：999900
2SB1412atest：10
2SB1412wtest：10

2SB1412代换 2SB1412用什么型号代替：2SA1242,2SA1385,2SB1205,2SB1447,

2SB1412价格

参考价格：￥1.6523

型号：2SB1412TLQ 品牌：Rohm 备注：这里有2SB1412多少钱，2025年最近7天走势，今日出价，今日竞价，2SB1412批发/采购报价，2SB1412行情走势销售排行榜，2SB1412报价。

型号	功能描述	生产厂家企业	LOGO
2SB1412	Low Frequency Transistor(-20V,-5A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1412	PNP EPITAXIAL PLANAR TRANSISTOR Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat)	WEITRON	WEITRON
2SB1412	TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power Amplifier Applications	JIANGSU 长电科技	JIANGSU
2SB1412	isc Silicon NPN Power Transistor DESCRIPTION • Small and slim package making it easy to make 2SB1205-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifie	ISC 无锡固电	ISC
2SB1412	Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118. Applications Medium power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB1412	Low Frequency Transistor Features ● Low VCE(sat). ● PNP silicon transistor.	KEXIN 科信电子	KEXIN
2SB1412	PNP Silicon Low Frequency Transistor Features 1) Low VCE(sat). 2) Excellent DC current gain characteristics 3) Complements the 2SD2118	SECOS 喜可士	SECOS
2SB1412	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412	双极型晶体管	LUGUANG 鲁光电子	LUGUANG
2SB1412	20V,5A,Medium Power PNP Bipolar Transistor	GALAXY 银河微电	GALAXY
2SB1412	Bipolar Transistor	UTC 友顺	UTC
2SB1412	Low frequency transistor (−20V, −5A) 文件：139.65 Kbytes Page：5 Pages	ROHM 罗姆	ROHM
2SB1412	Low frequency transistor (−20V,−5A) 文件：192.32 Kbytes Page：4 Pages	ROHM 罗姆	ROHM
2SB1412	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412-251	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412-252	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412L-TN3-B-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412L-TN3-C-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412L-TN3-E-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412L-TN3-F-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-B-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-C-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-E-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-F-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412_09	Low frequency transistor (−20V,−5A) 文件：192.32 Kbytes Page：4 Pages	ROHM 罗姆	ROHM
2SB1412_10	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412_15	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412_15	PNP Plastic Encapsulated Transistor 文件：428.97 Kbytes Page：2 Pages	SECOS 喜可士	SECOS
2SB1412G-X-TN3-R	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412G-X-TN3-R	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412G-X-TN3-T	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412L-X-TN3-R	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：174.96 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412L-X-TN3-R	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412L-X-TN3-T	HIGH VOLTAGE SWITCHING TRANSISTOR 文件：192.02 Kbytes Page：5 Pages	UTC 友顺	UTC
2SB1412-P	PNP Silicon Epitaxial Transistors 文件：653.23 Kbytes Page：4 Pages	MCC	MCC
2SB1412-Q	PNP Silicon Epitaxial Transistors 文件：653.23 Kbytes Page：4 Pages	MCC	MCC
2SB1412-Q-TP	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）描述：TRANS PNP 30V 5A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
2SB1412-R	PNP Silicon Epitaxial Transistors 文件：653.23 Kbytes Page：4 Pages	MCC	MCC
2SB1412-R-TP	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）描述：TRANS PNP 30V 5A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
2SB1412TLR	Low frequency transistor (??0V,??A) 文件：135.55 Kbytes Page：4 Pages	Littelfuse 力特	Littelfuse

2SB1412产品属性

类型
描述
型号
2SB1412
制造商
ROHM Semiconductor
功能描述
5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR

2SB1412供应商更多...

更新时间：2025-11-27 15:23:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	2SB1412	CJ/长晶	23+	SOT-223	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市亿联芯电子科技有限公司	2SB1412TLQ	ROHM/罗姆	2023+	TO252	2498	十五年行业诚信经营,专注全新正品	询价
深圳市纳艾斯科技有限公司	2SB1412TLQ	原装ROHM	24+	SOT252	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市云美电子科技有限公司	2SB1412TLQ	ROHM/罗姆	24+	SOT-252	28347	只做全新原装进口现货	询价
深圳市富芯乐电子科技有限公司	2SB1412TRR	ROHM	24+	SOT-252	3200	只做原装正品现货欢迎来电查询15919825718	询价
深圳市宇创芯科技有限公司	2SB1412TLQ	ROHM/罗姆	24+	TO252	9600	原装现货,优势供应,支持实单!	询价
深圳诚思涵科技有限公司	2SB1412TLR	原装ROHM	19+	TO-252	20000	原装现货假一罚十	询价
上海意淼电子科技有限公司	2SB1412TL	ROHM	23+	TO-263	20000	全新原装假一赔十	询价
深圳市胜彬电子有限公司	2SB1412TLR	ROHM/罗姆	22+	CPT3	8000	原装正品支持实单	询价
深圳市盈慧通电子有限公司	2SB1412-R	MCC/美微科	2511	DPAK	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价

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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
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2SB1412晶体管资料

2SB1412价格

2SB1412产品属性

2SB1412供应商更多...

2SB1412芯片相关品牌

2SB1412规格书下载地址

2SB1412参数引脚图相关

2SB1412数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SB776L-TO252R-P-TG_UTC代理商

2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引