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2SB14晶体管资料

2SB14别名：2SB14三极管、2SB14晶体管、2SB14晶体三极管
2SB14生产厂家：日本富士通公司
2SB14制作材料：Ge-PNP
2SB14性质：低频或音频放大（LF）_前置放大（V）_低噪放大（
2SB14封装形式：直插封装
2SB14极限工作电压：30V
2SB14最大电流允许值：0.05A
2SB14最大工作频率：<1MHZ或未知
2SB14引脚数：3
2SB14最大耗散功率：0.05W
2SB14放大倍数：
2SB14图片代号：C-47
2SB14vtest：30
2SB14htest：999900
2SB14atest：0.05
2SB14wtest：0.05

2SB14代换 2SB14用什么型号代替：AC122,AC125,AC126,AC151,AC151R,ACY32,2N1191,2N1192,2N1193,2N1194,2SB173,3AX51A,

2SB14价格

参考价格：￥1.6523

型号：2SB1412TLQ 品牌：Rohm 备注：这里有2SB14多少钱，2026年最近7天走势，今日出价，今日竞价，2SB14批发/采购报价，2SB14行情走势销售排行榜，2SB14报价。

型号	功能描述	生产厂家企业	LOGO
2SB1400	Silicon PNP Epitaxial Silicon PNP Epitaxial Application Low frequency power amplifier	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SB1400	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications	ISC 无锡固电	ISC
2SB1400	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications	SAVANTIC	SAVANTIC
2SB1401	Low frequency power amplifier Application Low frequency power amplifier	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SB1402	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications	SAVANTIC	SAVANTIC
2SB1402	Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V,lc= -1.5A) APPLICATIONS • Designed for low frequency power amplifier applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1402	isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS • Designed for low frequency power amplifier applications.	ISC 无锡固电	ISC
2SB1403	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications	ISC 无锡固电	ISC
2SB1403	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications	SAVANTIC	SAVANTIC
2SB1404	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications	SAVANTIC	SAVANTIC
2SB1404	Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage-.. :V(BR)cEo=-120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, lc= -1.5A APPLICATIONS • Designed for low frequency power amplifier applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1404	isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS • Designed for low frequency power amplifier applications.	ISC 无锡固电	ISC
2SB1405	General Driver Applications??? General Driver Applications Features · Darlington connection. · High DC current gain. · Large current capacity, wide ASO.	SANYO 三洋	SANYO
2SB1406	Driver Applications??? PNP Epitaxial Planar Silicon Darlington Transistor Features • Darlington connection. • High DC current gain. • Large current capacity. Applications • Relay drivers, hammer drivers, lamp drivers, motor drivers.	SANYO 三洋	SANYO
2SB1407	Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S)	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SB1407	Silicon PNP Epitaxial Transistor Application\nLow frequency power amplifier complementary Pair with 2SD2121(L)/(S)	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SB1407L	Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S)	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SB1407S	Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S)	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SB1407S	Silicon PNP Epitaxial ■ Features ● Low frequency power amplifier ● Complementary to 2SD2121	KEXIN 科信电子	KEXIN
2SB1409	Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SB1409L	Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SB1409S	Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SB1409S	Silicon NPN Triple Diffused Type Transistor Silicon NPN Triple Diffused Type Transistor	KEXIN 科信电子	KEXIN
2SB1411	Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, lc= -1A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -1A, IB=-2mA) APPLICATIONS • High power switching applications. • Hammer driv	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1411	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • Switching applications • Hammer drive ,pulse motor drive applications	SAVANTIC	SAVANTIC
2SB1411	isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, lc= -1A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -1A, IB=-2mA) APPLICATIONS • High power switching applications. • Hammer driv	ISC 无锡固电	ISC
2SB1411	TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A)	TOSHIBA 东芝	TOSHIBA
2SB1412	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412	PNP EPITAXIAL PLANAR TRANSISTOR Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat)	WEITRON	WEITRON
2SB1412	丝印代码：TL；Low Frequency Transistor(-20V,-5A) Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	ROHM 罗姆	ROHM
2SB1412	PNP Silicon Low Frequency Transistor Features 1) Low VCE(sat). 2) Excellent DC current gain characteristics 3) Complements the 2SD2118	SECOS 喜可士	SECOS
2SB1412	Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118. Applications Medium power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB1412	TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power Amplifier Applications	JIANGSU 长电科技	JIANGSU
2SB1412	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412	Low Frequency Transistor Features ● Low VCE(sat). ● PNP silicon transistor.	KEXIN 科信电子	KEXIN
2SB1412	isc Silicon NPN Power Transistor DESCRIPTION • Small and slim package making it easy to make 2SB1205-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifie	ISC 无锡固电	ISC
2SB1412-251	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412-252	Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V(Min) ·DC Current Gain- : hFE= 82(Min)@ IC= -0.5A ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1412L-TN3-B-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412L-TN3-C-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412L-TN3-E-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412L-TN3-F-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-B-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-C-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-E-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1412-TN3-F-R	HIGH VOLTAGE SWITCHING TRANSISTOR ■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)	UTC 友顺	UTC
2SB1414	Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 ■Features •Excellent current ICcharacteristics of forward current transfer ratio hFE vs. collector •High transition frequency fT •Allowing automatic insertion with radial taping	PANASONIC 松下	PANASONIC
2SB1416	Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping	PANASONIC 松下	PANASONIC
2SB1417	Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping	PANASONIC 松下	PANASONIC
2SB1417A	Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping	PANASONIC 松下	PANASONIC
2SB1418	Silicon PNP epitaxial planar type Darlington(For power amplification) Silicon PNP epitaxial planar type darlington For power amplification Complementary to 2SD2138 and 2SD2138A ■ Features • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping	PANASONIC 松下	PANASONIC
2SB1418A	Silicon PNP epitaxial planar type Darlington(For power amplification) Silicon PNP epitaxial planar type darlington For power amplification Complementary to 2SD2138 and 2SD2138A ■ Features • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping	PANASONIC 松下	PANASONIC
2SB1419	isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)cEo=-160V(Min) • Wide Area of Safe Operation APPLICATIONS • Power amplifier applications • Optimum for the output stage of a HiFi audio amplifier	ISC 无锡固电	ISC
2SB1419	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Wide area of safe operation • Low collector saturation voltage APPLICATIONS • For low frequency and high power amplifier applications	SAVANTIC	SAVANTIC
2SB1419	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)cEo=-160V(Min) • Wide Area of Safe Operation APPLICATIONS • Power amplifier applications • Optimum for the output stage of a HiFi audio amplifier	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1420	isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 2000(Min)@IC= -8A • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Driver for chopper regulator, DC motor driver and general purpose appl	ISC 无锡固电	ISC
2SB1420	Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose) Silicon PNP Epitaxial Planar Transistor Application : Chopper Regulator, DC Motor Driver and General Purpose	SANKEN 三垦	SANKEN
2SB1421	isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2140 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for high power amplificati	ISC 无锡固电	ISC
2SB1421	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2140 APPLICATIONS • Designed for high power amplifications. • Optimum for the output stage of a HiFi audio amplifier	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI

2SB14产品属性

类型
描述
NPN/PNP：
PNP
hFE min.：
60
hFE max.：
320
Pc (W)：
18
Production Status：
EOL

2SB14供应商更多...

更新时间：2026-5-15 14:14:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	2SB1453	NEC	20+	TO220	20500	汽车电子原装主营-可开原型号增税票	询价
深圳市威雅利发展有限公司	2SB1453	NEC	46+	TO-220F	1800	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市河锋鑫科技有限公司	2SB1453	NEC	22+	TO-220	6000	十年配单,只做原装	询价
深圳市拓亿芯电子有限公司	2SB1454	SANYO/三洋	25+	TO-220	9800	全新原装现货,假一赔十	询价
深圳市坤融电子科技有限公司	2SB1453	NEC	2025+	TO-220F	5000	原装进口价格优请找坤融电子!	询价
深圳市博中泰实业有限公司	2SB1453=B1453	NEC/日电电子	25+		90000	全新原装现货	询价
深圳市富芯乐电子科技有限公司	2SB1453	NEC	24+	TO-220F	18000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市安富世纪电子有限公司	2SB1453	NEC	23+	TO-220F	2463	全新原装正品现货,支持订货	询价
深圳市赛美科科技有限公司	2SB1457	TOS		TO-92L	8553	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市科恒伟业电子有限公司	2SB1453	NEC	2450+	TO220F	9850	只做原厂原装正品现货或订货假一赔十!	询价

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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

DdatasheetPDF页码索引

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找IC，尽在114IC

2SB14晶体管资料

2SB14价格

2SB14产品属性

2SB14供应商更多...

2SB14芯片相关品牌

2SB14规格书下载地址

2SB14参数引脚图相关

2SB14数据表相关新闻

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2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引