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2SB14晶体管资料

2SB14别名：2SB14三极管、2SB14晶体管、2SB14晶体三极管
2SB14生产厂家：日本富士通公司
2SB14制作材料：Ge-PNP
2SB14性质：低频或音频放大（LF）_前置放大（V）_低噪放大（
2SB14封装形式：直插封装
2SB14极限工作电压：30V
2SB14最大电流允许值：0.05A
2SB14最大工作频率：<1MHZ或未知
2SB14引脚数：3
2SB14最大耗散功率：0.05W
2SB14放大倍数：
2SB14图片代号：C-47
2SB14vtest：30
2SB14htest：999900
2SB14atest：0.05
2SB14wtest：0.05

2SB14代换 2SB14用什么型号代替：AC122,AC125,AC126,AC151,AC151R,ACY32,2N1191,2N1192,2N1193,2N1194,2SB173,3AX51A,

2SB14价格

参考价格：￥1.6523

型号：2SB1412TLQ 品牌：Rohm 备注：这里有2SB14多少钱，2025年最近7天走势，今日出价，今日竞价，2SB14批发/采购报价，2SB14行情走势销售排行榜，2SB14报价。

型号	功能描述	生产厂家&企业
2SB1400	SiliconPNPEpitaxial SiliconPNPEpitaxial Application Lowfrequencypoweramplifier	HitachiHitachi Semiconductor 日立日立公司
2SB1400	SiliconPNPPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowcollectorsaturationvoltage ·DARLINGTON APPLICATIONS ·Foruseinlowfrequencypoweramplifierapplications	SAVANTIC Savantic, Inc.
2SB1400	SiliconPNPPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowcollectorsaturationvoltage ·DARLINGTON APPLICATIONS ·Foruseinlowfrequencypoweramplifierapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1401	Lowfrequencypoweramplifier Application Lowfrequencypoweramplifier	HitachiHitachi Semiconductor 日立日立公司
2SB1402	SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •Lowcollectorsaturationvoltage •DARLINGTON APPLICATIONS •Foruseinlowfrequencypoweramplifierapplications	SAVANTIC Savantic, Inc.
2SB1402	iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-3V,IC=-1.5A) APPLICATIONS •Designedforlowfrequencypoweramplifierapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1402	SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEo=-120V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-3V,lc=-1.5A) APPLICATIONS •Designedforlowfrequencypoweramplifierapplications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
2SB1403	SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •Lowcollectorsaturationvoltage •DARLINGTON APPLICATIONS •Foruseinlowfrequencypoweramplifierapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1403	SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •Lowcollectorsaturationvoltage •DARLINGTON APPLICATIONS •Foruseinlowfrequencypoweramplifierapplications	SAVANTIC Savantic, Inc.
2SB1404	SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •Lowcollectorsaturationvoltage •DARLINGTON APPLICATIONS •Foruseinlowfrequencypoweramplifierapplications	SAVANTIC Savantic, Inc.
2SB1404	iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-3V,IC=-1.5A) APPLICATIONS •Designedforlowfrequencypoweramplifierapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1404	SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-..:V(BR)cEo=-120V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-3V,lc=-1.5A APPLICATIONS •Designedforlowfrequencypoweramplifierapplications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
2SB1405	GeneralDriverApplications??? GeneralDriverApplications Features ·Darlingtonconnection. ·HighDCcurrentgain. ·Largecurrentcapacity,wideASO.	SANYOSanyo Semicon Device 三洋三洋电机株式会社
2SB1406	DriverApplications??? PNPEpitaxialPlanarSiliconDarlingtonTransistor Features •Darlingtonconnection. •HighDCcurrentgain. •Largecurrentcapacity. Applications •Relaydrivers,hammerdrivers,lampdrivers,motordrivers.	SANYOSanyo Semicon Device 三洋三洋电机株式会社
2SB1407	SiliconPNPEpitaxial Application LowfrequencypoweramplifiercomplementaryPairwith2SD2121(L)/(S)	HitachiHitachi Semiconductor 日立日立公司
2SB1407L	SiliconPNPEpitaxial Application LowfrequencypoweramplifiercomplementaryPairwith2SD2121(L)/(S)	HitachiHitachi Semiconductor 日立日立公司
2SB1407S	SiliconPNPEpitaxial ■Features ●Lowfrequencypoweramplifier ●Complementaryto2SD2121	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司
2SB1407S	SiliconPNPEpitaxial Application LowfrequencypoweramplifiercomplementaryPairwith2SD2121(L)/(S)	HitachiHitachi Semiconductor 日立日立公司
2SB1409	SiliconPNPEpitaxial Application LowfrequencypoweramplifiercomplementaryPairwith2SD2123(L)/(S)	HitachiHitachi Semiconductor 日立日立公司
2SB1409L	SiliconPNPEpitaxial Application LowfrequencypoweramplifiercomplementaryPairwith2SD2123(L)/(S)	HitachiHitachi Semiconductor 日立日立公司
2SB1409S	SiliconPNPEpitaxial Application LowfrequencypoweramplifiercomplementaryPairwith2SD2123(L)/(S)	HitachiHitachi Semiconductor 日立日立公司
2SB1409S	SiliconNPNTripleDiffusedTypeTransistor SiliconNPNTripleDiffusedTypeTransistor	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司
2SB1411	iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-100V(Min) •HighDCCurrentGain- :hFE=1500(Min)@(VCE=-3V,lc=-1A) •LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(lc=-1A,IB=-2mA) APPLICATIONS •Highpowerswitchingapplications. •Hammerdriv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1411	SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage APPLICATIONS •Switchingapplications •Hammerdrive,pulsemotordriveapplications	SAVANTIC Savantic, Inc.
2SB1411	TRANSISTOR(SWITCHING,HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS) SwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=1500(min)(VCE=−3V,IC=−1A) •Lowsaturationvoltage:VCE(sat)=−1.5V(max)(IC=−1A)	TOSHIBAToshiba Semiconductor 东芝株式会社东芝
2SB1411	SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-100V(Min) •HighDCCurrentGain- :hFE=1500(Min)@(VCE=-3V,lc=-1A) •LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(lc=-1A,IB=-2mA) APPLICATIONS •Highpowerswitchingapplications. •Hammerdriv	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
2SB1412	TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES PowerAmplifierApplications	JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司
2SB1412	iscSiliconNPNPowerTransistor DESCRIPTION •Smallandslimpackagemakingiteasytomake2SB1205-usedsetsmaller •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifie	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1412	SiliconPNPtransistorinaTO-252PlasticPackage. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics,complementsthe2SD2118. Applications Mediumpoweramplifierapplications.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司
2SB1412	SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1412	SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1412	PNPEPITAXIALPLANARTRANSISTOR Features: ExcellentDCCurrentGainCharacteristics LowVCE(Sat)	WEITRON Weitron Technology
2SB1412	LowFrequencyTransistor(-20V,-5A) Features 1)LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2098/2SD2118/2SD2097/2SD2166.	ROHMRohm 罗姆罗姆半导体集团
2SB1412	LowFrequencyTransistor Features ●LowVCE(sat). ●PNPsilicontransistor.	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司
2SB1412	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412	PNPSiliconLowFrequencyTransistor Features 1)LowVCE(sat). 2)ExcellentDCcurrentgaincharacteristics 3)Complementsthe2SD2118	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司
2SB1412-251	SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1412-252	SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-20V(Min) ·DCCurrentGain- :hFE=82(Min)@IC=-0.5A ·Fastswitchingspeed APPLICATIONS ·Relaydrivers,Highspeedinverters,convertersandother generalhigh-currentswitchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1412L-TN3-B-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412L-TN3-C-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412L-TN3-E-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412L-TN3-F-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412-TN3-B-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412-TN3-C-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412-TN3-E-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1412-TN3-F-R	HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES ExcellentDCcurrentgaincharacteristics LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1414	SiliconPNPepitaxialplanartype Forlow-frequencydriver/highpoweramplification Complementaryto2SD2134 ■Features •ExcellentcurrentICcharacteristicsofforwardcurrenttransferratiohFEvs.collector •HightransitionfrequencyfT •Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下电器
2SB1416	SiliconPNPepitaxialplanartype Forlow-frequencypoweramplification Complementaryto2SD2136 ■Features •HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity •Lowcollector-emittersaturationvoltageVCE(sat) •Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下电器
2SB1417	SiliconPNPepitaxialplanartype(Forpoweramplification) SiliconPNPepitaxialplanartype Forpoweramplification Complementaryto2SD2137and2SD2137A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下电器
2SB1417A	SiliconPNPepitaxialplanartype(Forpoweramplification) SiliconPNPepitaxialplanartype Forpoweramplification Complementaryto2SD2137and2SD2137A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下电器
2SB1418	SiliconPNPepitaxialplanartypeDarlington(Forpoweramplification) SiliconPNPepitaxialplanartypedarlington Forpoweramplification Complementaryto2SD2138and2SD2138A ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下电器
2SB1418A	SiliconPNPepitaxialplanartypeDarlington(Forpoweramplification) SiliconPNPepitaxialplanartypedarlington Forpoweramplification Complementaryto2SD2138and2SD2138A ■Features •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下电器
2SB1419	SiliconPNPPowerTransistors DESCRIPTION •WithTO-3PLpackage •Wideareaofsafeoperation •Lowcollectorsaturationvoltage APPLICATIONS •Forlowfrequencyandhighpoweramplifierapplications	SAVANTIC Savantic, Inc.
2SB1419	iscSiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)cEo=-160V(Min) •WideAreaofSafeOperation APPLICATIONS •Poweramplifierapplications •OptimumfortheoutputstageofaHiFiaudioamplifier	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1419	SiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)cEo=-160V(Min) •WideAreaofSafeOperation APPLICATIONS •Poweramplifierapplications •OptimumfortheoutputstageofaHiFiaudioamplifier	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
2SB1420	iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •HighDCCurrentGain-:hFE=2000(Min)@IC=-8A •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Driverforchopperregulator,DCmotordriverandgeneralpurposeappl	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1420	SiliconPNPEpitaxialPlanarTransistor(ChopperRegulator,DCMotorDriverandGeneralPurpose) SiliconPNPEpitaxialPlanarTransistor Application:ChopperRegulator,DCMotorDriverandGeneralPurpose	SankenSanken electric 三垦三垦电气株式会社
2SB1421	iscSiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-140V(Min) •WideAreaofSafeOperation •ComplementtoType2SD2140 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforhighpoweramplificati	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SB1421	SiliconPNPPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-140V(Min) •WideAreaofSafeOperation •ComplementtoType2SD2140 APPLICATIONS •Designedforhighpoweramplifications. •OptimumfortheoutputstageofaHiFiaudioamplifier	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
2SB1424	LOWVCE(SAT)TRANSISTOR LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES VerygoodDCcurrentgain VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A)	UTCUnisonic Technologies 友顺友顺科技股份有限公司

2SB14产品属性

类型
描述
型号
2SB14
制造商
ROHM Semiconductor
功能描述
5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR

2SB14供应商更多...

更新时间：2025-6-15 9:48:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	2SB1440	CJ/长电	23+	SOT-89	50000	全新原装正品现货,支持订货	询价
深圳市创新迹电子有限公司	2SB1440	PANASONIC/松下	22+	SOT-89	25000	只有原装原装,支持BOM配单	询价
现代芯城（深圳）科技有限公司	2SB1440(170-340)		24+	N/A	79000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市安富世纪电子有限公司	2SB1440	ROHM	23+	SOT89	2000	全新原装正品现货,支持订货	询价
深圳市百域芯科技有限公司	2SB1440	CJ/长电	21+	SOT-89	30000	长电优势分销实单必成可开13点增值发票	询价
深圳市力拓辉电子有限公司	2SB1440_120-240_SOT-89-3L	长晶科技	21+	SOT-89-3L	50	全新原装鄙视假货	询价
深圳市中福国际管理有限公司	2SB1440	NK/南科功率		SOT-89	360000	交期准时服务周到	询价
深圳兆威电子有限公司	2SB1440	PANASONIC	23+	SOT-89	63000	原装正品现货	询价
深圳市金芯世纪电子有限公司	2SB1440	PANASONIC/松下	22+	SOT89	100000	代理渠道/只做原装/可含税	询价
深圳市得捷芯城科技有限公司	2SB1440	CJ/长电	24+	NA/	15250	原装现货,当天可交货,原型号开票	询价

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