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2SB126晶体管资料
2SB126别名：2SB126三极管、2SB126晶体管、2SB126晶体三极管
2SB126生产厂家：日本松下公司
2SB126制作材料：Ge-PNP
2SB126性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SB126封装形式：直插封装
2SB126极限工作电压：32V
2SB126最大电流允许值：3.5A
2SB126最大工作频率：<1MHZ或未知
2SB126引脚数：2
2SB126最大耗散功率：30W
2SB126放大倍数：
2SB126图片代号：E-44
2SB126vtest：32
2SB126htest：999900
- 2SB126atest：3.5
2SB126wtest：30
2SB126代换 2SB126用什么型号代替：AD149,AD166,AD167,AL102,AL103,2N2137,2N22142,3AD56A,
2SB126价格
参考价格：￥1.2661
型号：2SB1260T100P 品牌：ROHM 备注：这里有2SB126多少钱，2025年最近7天走势，今日出价，今日竞价，2SB126批发/采购报价，2SB126行情走势销售排行榜，2SB126报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power Transistor Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. | ROHM 罗姆 |   | ||
PNP Plastic-Encapsulate Transistor PNP Plastic-Encapsulate Transistor P/b Lead(Pb)-Free | WEITRON | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | | ||
TRANSISTOR(PNP) FEATURES ● Power Transistor ● High Voltage and Current ● Low Collector-emitter saturation voltage ● Complements the 2SD1898 | HTSEMI 金誉半导体 | | ||
Power Transistor Features ● High breakdown voltage and high current.BVCEO= -80V, IC=-1A ● Good hFE linearity. ● Low VCE(sat). ● Epitaxial planar type ● PNP silicon transistor | KEXIN 科信电子 | | ||
-1 A, -80 V PNP Plastic Encapsulated Transistor FEATURES ♦ High breakdown voltage and high current BVCEO=-80V, IC=-1A ♦ Good hFE linearity ♦ Complements to 2SD1898 | SECOS 喜可士 | | ||
SOT-89 Plastic-Encapsulate Transistors FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WILLAS 威伦电子 | | ||
Power Transistor (??0V, ??A) Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. | ROHM 罗姆 | | ||
Silicon PNP transistor in a SOT-89 Plastic Package Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features High breakdown voltage, good hFE linearity, low VCE(sat), complements the 2SD1898. Applications General power amplifier applications. | FOSHAN 蓝箭电子 | | ||
Plastic-Encapsulate Transistors FEATURES • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898. | HOTTECH 合科泰 | | ||
TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | ||
SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Power Transistor ● High Voltage and Current ● Low Collector-emitter saturation voltage ● Complements the 2SD1898 | JIANGSU 长电科技 | | ||
Power Transistor(-80V,-1A) FEATURES ● High breakdown voltage and high current. BVCEO=-80V,IC=-1A ● Good hFEVLinearity. ● Low VCE(sat). ● Complements the 2SD1898. APPLICATIONS ● Epitaxial planar type PNP silicon transistor | BILIN 银河微电 | | ||
Power Transistor(-80V,-1A) FEATURES High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898. APPLICATIONS Epitaxial planar type PNP silicon transistor | DGNJDZ 南晶电子 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO | MCC | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO | MCC | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO | MCC | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
Power Transistor (??0V, ??A) Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. | ROHM 罗姆 | | ||
Power Transistor (??0V, ??A) Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. | ROHM 罗姆 | | ||
Plastic-Encapsulate Transistors FEATURES High Br e akdown Voltage and Current Excellent DC Current Gain Linearity Complement the 2SB1260U Low Collector-Emitter Saturation Voltage | GWSEMI 唯圣电子 | |
2SB126产品属性
- 类型
描述
- 型号
2SB126
- 制造商
ROHM Semiconductor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
24+ |
NA/ |
11000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM |
2016+ |
SOT89 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
UTC/友顺 |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
|||
SECOS/喜可士 |
25+ |
SOT-89 |
20300 |
SECOS/喜可士原装特价2SB1260即刻询购立享优惠#长期有货 |
|||
ROHM |
24+ |
SOT89 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ROHM/罗姆 |
2450+ |
SOT-89 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
UTC(友顺) |
24+/25+ |
SOT-89 |
4000 |
UTC原厂一级代理商,价格优势! |
|||
ROHM/罗姆 |
2223+ |
SOT-89 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ROHM |
NEW |
SOT89 |
11092 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
Bychip/百域芯 |
21+ |
SOT-89 |
30000 |
实单必成 质强价优 可开13点增值税 |
2SB126芯片相关品牌
2SB126规格书下载地址
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2SB126数据表相关新闻
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2012-11-9
DdatasheetPDF页码索引
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