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2SB126晶体管资料

2SB126别名：2SB126三极管、2SB126晶体管、2SB126晶体三极管
2SB126生产厂家：日本松下公司
2SB126制作材料：Ge-PNP
2SB126性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SB126封装形式：直插封装
2SB126极限工作电压：32V
2SB126最大电流允许值：3.5A
2SB126最大工作频率：<1MHZ或未知
2SB126引脚数：2
2SB126最大耗散功率：30W
2SB126放大倍数：
2SB126图片代号：E-44
2SB126vtest：32
2SB126htest：999900
2SB126atest：3.5
2SB126wtest：30

2SB126代换 2SB126用什么型号代替：AD149,AD166,AD167,AL102,AL103,2N2137,2N22142,3AD56A,

2SB126价格

参考价格：￥1.2661

型号：2SB1260T100P 品牌：ROHM 备注：这里有2SB126多少钱，2025年最近7天走势，今日出价，今日竞价，2SB126批发/采购报价，2SB126行情走势销售排行榜，2SB126报价。

型号	功能描述	生产厂家&企业
2SB1260	PowerTransistor Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.	ROHMRohm 罗姆罗姆半导体集团
2SB1260	PNPPlastic-EncapsulateTransistor PNPPlastic-EncapsulateTransistor P/bLead(Pb)-Free	WEITRON Weitron Technology
2SB1260	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260	Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃	TELTokyo Electron Ltd. 东电电子东京电子有限公司
2SB1260	TRANSISTOR(PNP) FEATURES ●PowerTransistor ●HighVoltageandCurrent ●LowCollector-emittersaturationvoltage ●Complementsthe2SD1898	HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司
2SB1260	PowerTransistor Features ●Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A ●GoodhFElinearity. ●LowVCE(sat). ●Epitaxialplanartype ●PNPsilicontransistor	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司
2SB1260	-1A,-80VPNPPlasticEncapsulatedTransistor FEATURES ♦HighbreakdownvoltageandhighcurrentBVCEO=-80V,IC=-1A ♦GoodhFElinearity ♦Complementsto2SD1898	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司
2SB1260	SOT-89Plastic-EncapsulateTransistors FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃	WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司
2SB1260	PowerTransistor(??0V,??A) Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.	ROHMRohm 罗姆罗姆半导体集团
2SB1260	SiliconPNPtransistorinaSOT-89PlasticPackage Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Highbreakdownvoltage,goodhFElinearity,lowVCE(sat),complementsthe2SD1898. Applications Generalpoweramplifierapplications.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司
2SB1260	Plastic-EncapsulateTransistors FEATURES •Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A •GoodhFEVLinearity. •LowVCE(sat). •Complementsthe2SD1898.	HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司
2SB1260	TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.5W(Tamb=25℃) Collectorcurrent ICM:-1A Collector-basevoltage V(BR)CBO:-80V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司
2SB1260	SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●PowerTransistor ●HighVoltageandCurrent ●LowCollector-emittersaturationvoltage ●Complementsthe2SD1898	JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司
2SB1260	PowerTransistor(-80V,-1A) FEATURES ●Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A ●GoodhFEVLinearity. ●LowVCE(sat). ●Complementsthe2SD1898. APPLICATIONS ●EpitaxialplanartypePNPsilicontransistor	BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司
2SB1260	PowerTransistor(-80V,-1A) FEATURES Highbreakdownvoltageand highcurrent. BVCEO=-80V,IC=-1A GoodhFEVLinearity. LowVCE(sat). Complementsthe2SD1898. APPLICATIONS EpitaxialplanartypePNPsilicontransistor	DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司
2SB1260L-P-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-P-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-P-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-P-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-P-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-P-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-Q-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-Q-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-Q-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-Q-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-Q-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-Q-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-R-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-R-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-R-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-R-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-R-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-R-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-X-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-X-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-X-TN3-T	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-P	PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2SB1260-P-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-P-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-P-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-P-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-P-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-P-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-Q	PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2SB1260-Q-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-Q-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-Q-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-Q-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-Q-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-Q-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-R	PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2SB1260-R-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-R-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-R-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-R-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-R-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-R-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260T100Q	PowerTransistor(??0V,??A) Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.	ROHMRohm 罗姆罗姆半导体集团
2SB1260T100R	PowerTransistor(??0V,??A) Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.	ROHMRohm 罗姆罗姆半导体集团
2SB1260U	Plastic-EncapsulateTransistors FEATURES HighBreakdownVoltageandCurrent ExcellentDCCurrentGainLinearity Complementthe2SB1260U LowCollector-EmitterSaturationVoltage	GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司

2SB126产品属性

类型
描述
型号
2SB126
制造商
ROHM Semiconductor

2SB126供应商更多...

更新时间：2025-7-23 13:36:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市亿智腾科技有限公司	2SB1260	ROHM	24+	SOT-89	6430	原装现货/欢迎来电咨询	询价
深圳市柯尔基电子有限公司	2SB1260G-Q	UTC/友顺	23+/24+	22+	29940	主推型号,原装正品,终端BOM表可配单,可开13点税	询价
深圳市金华微盛电子有限公司	2SB1260	CJ	19+	SOT-89	9000		询价
深圳市博中泰实业有限公司	2SB1260	ROHM/罗姆	24+	SOT89	60000	全新原装现货	询价
深圳市华睿芯科技有限公司	2SB1260	ROHM	24+	SOT89	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市东来宝电子科技有限公司	2SB1260T100R	ROHM/罗姆	24+	SOT89	95000	郑重承诺只做原装进口现货	询价
深圳市安富世纪电子有限公司	2SB1260	CJ	23+	SOT89	50000	全新原装正品现货,支持订货	询价
深圳兆威电子有限公司	2SB1260	ROHM	23+	SOT-89	63000	原装正品现货	询价
深圳市索歌特科技有限公司	2SB1260T100Q	ROHM	22+		21000	华南区总代	询价
深圳市振宏微科技有限公司	2SB1260	SOT-89	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价

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2SB126数据表相关新闻

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2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-14
2SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-1
2SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-30
2SB649 MOS
www.jskj-ic.com
2021-9-10
2SA2198
2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-24
2SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下：·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息）·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9

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