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2SB126晶体管资料

2SB126别名：2SB126三极管、2SB126晶体管、2SB126晶体三极管
2SB126生产厂家：日本松下公司
2SB126制作材料：Ge-PNP
2SB126性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SB126封装形式：直插封装
2SB126极限工作电压：32V
2SB126最大电流允许值：3.5A
2SB126最大工作频率：<1MHZ或未知
2SB126引脚数：2
2SB126最大耗散功率：30W
2SB126放大倍数：
2SB126图片代号：E-44
2SB126vtest：32
2SB126htest：999900
2SB126atest：3.5
2SB126wtest：30

2SB126代换 2SB126用什么型号代替：AD149,AD166,AD167,AL102,AL103,2N2137,2N22142,3AD56A,

2SB126价格

参考价格：￥1.2661

型号：2SB1260T100P 品牌：ROHM 备注：这里有2SB126多少钱，2024年最近7天走势，今日出价，今日竞价，2SB126批发/采购报价，2SB126行情走势销售排行榜，2SB126报价。

型号	功能描述	生产厂家&企业
2SB1260	PowerTransistor Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.	ROHMRohm Semiconductor 罗姆罗姆半导体集团
2SB1260	PNPPlastic-EncapsulateTransistor PNPPlastic-EncapsulateTransistor P/bLead(Pb)-Free	WEITRONWEITRON 威堂電子科技
2SB1260	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260	Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃	TEL TRANSYS Electronics Limited
2SB1260	TRANSISTOR(PNP) FEATURES ●PowerTransistor ●HighVoltageandCurrent ●LowCollector-emittersaturationvoltage ●Complementsthe2SD1898	HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司
2SB1260	PowerTransistor Features ●Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A ●GoodhFElinearity. ●LowVCE(sat). ●Epitaxialplanartype ●PNPsilicontransistor	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司
2SB1260	-1A,-80VPNPPlasticEncapsulatedTransistor FEATURES ♦HighbreakdownvoltageandhighcurrentBVCEO=-80V,IC=-1A ♦GoodhFElinearity ♦Complementsto2SD1898	SECOS SeCoS Halbleitertechnologie GmbH
2SB1260	SiliconPNPtransistorinaSOT-89PlasticPackage Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Highbreakdownvoltage,goodhFElinearity,lowVCE(sat),complementsthe2SD1898. Applications Generalpoweramplifierapplications.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司
2SB1260	Plastic-EncapsulateTransistors FEATURES •Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A •GoodhFEVLinearity. •LowVCE(sat). •Complementsthe2SD1898.	HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司
2SB1260	TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.5W(Tamb=25℃) Collectorcurrent ICM:-1A Collector-basevoltage V(BR)CBO:-80V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司
2SB1260	SOT-89Plastic-EncapsulateTransistors FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃	WILLASWILLAS electronics corp 威倫威倫电子股份有限公司
2SB1260	PowerTransistor(??0V,??A) Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.	ROHMRohm Semiconductor 罗姆罗姆半导体集团
2SB1260	SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●PowerTransistor ●HighVoltageandCurrent ●LowCollector-emittersaturationvoltage ●Complementsthe2SD1898	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd
2SB1260	PowerTransistor(-80V,-1A) FEATURES ●Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A ●GoodhFEVLinearity. ●LowVCE(sat). ●Complementsthe2SD1898. APPLICATIONS ●EpitaxialplanartypePNPsilicontransistor	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司
2SB1260	PowerTransistor(-80V,-1A) FEATURES Highbreakdownvoltageand highcurrent. BVCEO=-80V,IC=-1A GoodhFEVLinearity. LowVCE(sat). Complementsthe2SD1898. APPLICATIONS EpitaxialplanartypePNPsilicontransistor	DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司
2SB1260L-P-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-P-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-P-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-P-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-P-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-P-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-Q-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-Q-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-Q-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-Q-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-Q-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-Q-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-R-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-R-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-R-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-R-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-R-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-R-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-X-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-X-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260L-X-TN3-T	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-P	PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO	MCCMicro Commercial Components 美微科美微科半导体公司
2SB1260-P-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-P-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-P-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-P-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-P-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-P-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-Q	PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO	MCCMicro Commercial Components 美微科美微科半导体公司
2SB1260-Q-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-Q-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-Q-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-Q-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-Q-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-Q-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-R	PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO	MCCMicro Commercial Components 美微科美微科半导体公司
2SB1260-R-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-R-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-R-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-R-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-R-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260-R-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
2SB1260T100Q	PowerTransistor(??0V,??A) Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.	ROHMRohm Semiconductor 罗姆罗姆半导体集团
2SB1260T100R	PowerTransistor(??0V,??A) Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.	ROHMRohm Semiconductor 罗姆罗姆半导体集团
2SB1260-X-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司

2SB126产品属性

类型
描述
型号
2SB126
制造商
ROHM Semiconductor

2SB126供应商更多...

更新时间：2024-4-26 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	2SB1260	ROHM	2016+	SOT89	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价
中天科工半导体（深圳）有限公司	2SB1260	ROHM	20+	SOT-89	43000	原装优势主营型号-可开原型号增税票	询价
深圳市华睿芯科技有限公司	2SB1260	ROHM	23+	SOT89	20000	原厂原装正品现货	询价
深圳市振宏微科技有限公司	2SB1260	SOT-89	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市艾宇特电子科技有限公司	2SB1260	CJ/长电	2048+	SOT89-3L	9851	只做原装正品现货!或订货假一赔十!	询价
深圳市航润创能电子集团有限公司	2SB1260T100R	ROHM/罗姆	21+	SOT-89	5215	只做原装,假一罚十	询价
深圳市昌和盛利电子有限公司	2SB1260	ROHM	23+	SOT89	11092		询价
上海鑫科润电子科技有限公司	2SB1260	ROHM	1216+	SOT	3218	原装现货海量库存欢迎咨询	询价
深圳市特顺芯科技有限公司	2SB1260	ROHM	2008++	SOT-89	7200	新进库存/原装	询价
瀚佳科技(深圳)有限公司	2SB1260	UTC	2020+	SOT89	16800	绝对原装进口现货,假一赔十,价格优势!?	询价

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