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2SB126晶体管资料

2SB126别名：2SB126三极管、2SB126晶体管、2SB126晶体三极管
2SB126生产厂家：日本松下公司
2SB126制作材料：Ge-PNP
2SB126性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SB126封装形式：直插封装
2SB126极限工作电压：32V
2SB126最大电流允许值：3.5A
2SB126最大工作频率：<1MHZ或未知
2SB126引脚数：2
2SB126最大耗散功率：30W
2SB126放大倍数：
2SB126图片代号：E-44
2SB126vtest：32
2SB126htest：999900
2SB126atest：3.5
2SB126wtest：30

2SB126代换 2SB126用什么型号代替：AD149,AD166,AD167,AL102,AL103,2N2137,2N22142,3AD56A,

2SB126价格

参考价格：￥1.2661

型号：2SB1260T100P 品牌：ROHM 备注：这里有2SB126多少钱，2026年最近7天走势，今日出价，今日竞价，2SB126批发/采购报价，2SB126行情走势销售排行榜，2SB126报价。

型号	功能描述	生产厂家企业	LOGO
2SB1260	丝印代码：TL；Power Transistor Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.	ROHM 罗姆	ROHM
2SB1260	PNP Plastic-Encapsulate Transistor PNP Plastic-Encapsulate Transistor P/b Lead(Pb)-Free	WEITRON	WEITRON
2SB1260	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260	Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL	TEL
2SB1260	TRANSISTOR(PNP) FEATURES ● Power Transistor ● High Voltage and Current ● Low Collector-emitter saturation voltage ● Complements the 2SD1898	HTSEMI 金誉半导体	HTSEMI
2SB1260	Power Transistor Features ● High breakdown voltage and high current.BVCEO= -80V, IC=-1A ● Good hFE linearity. ● Low VCE(sat). ● Epitaxial planar type ● PNP silicon transistor	KEXIN 科信电子	KEXIN
2SB1260	-1 A, -80 V PNP Plastic Encapsulated Transistor FEATURES ♦ High breakdown voltage and high current BVCEO=-80V, IC=-1A ♦ Good hFE linearity ♦ Complements to 2SD1898	SECOS 喜可士	SECOS
2SB1260	SOT-89 Plastic-Encapsulate Transistors FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WILLAS 威伦电子	WILLAS
2SB1260	Power Transistor (??0V, ??A) Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.	ROHM 罗姆	ROHM
2SB1260	Silicon PNP transistor in a SOT-89 Plastic Package Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features High breakdown voltage, good hFE linearity, low VCE(sat), complements the 2SD1898. Applications General power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB1260	Plastic-Encapsulate Transistors FEATURES • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898.	HOTTECH 合科泰	HOTTECH
2SB1260	TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SB1260	SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Power Transistor ● High Voltage and Current ● Low Collector-emitter saturation voltage ● Complements the 2SD1898	JIANGSU 长电科技	JIANGSU
2SB1260	Power Transistor(-80V,-1A) FEATURES ● High breakdown voltage and high current. BVCEO=-80V,IC=-1A ● Good hFEVLinearity. ● Low VCE(sat). ● Complements the 2SD1898. APPLICATIONS ● Epitaxial planar type PNP silicon transistor	BILIN 银河微电	BILIN
2SB1260	丝印代码：ZL；Power Transistor(-80V,-1A) FEATURES High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898. APPLICATIONS Epitaxial planar type PNP silicon transistor	DGNJDZ 南晶电子	DGNJDZ
2SB1260L-P-AB3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-P-AB3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-P-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-P-TN3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-P-TN3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-P-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-Q-AB3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-Q-AB3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-Q-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-Q-TN3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-Q-TN3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-Q-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-R-AB3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-R-AB3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-R-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-R-TN3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-R-TN3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-R-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-X-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-X-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-X-TN3-T	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-P	PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO	MCC	MCC
2SB1260-P-AB3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-P-AB3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-P-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-P-TN3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-P-TN3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-P-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-Q	PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO	MCC	MCC
2SB1260-Q-AB3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-Q-AB3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-Q-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-Q-TN3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-Q-TN3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-Q-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-R	PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO	MCC	MCC
2SB1260-R-AB3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-R-AB3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-R-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-R-TN3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-R-TN3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-R-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260T100Q	Power Transistor (??0V, ??A) Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.	ROHM 罗姆	ROHM
2SB1260T100R	Power Transistor (??0V, ??A) Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.	ROHM 罗姆	ROHM
2SB1260U	Plastic-Encapsulate Transistors FEATURES High Br e akdown Voltage and Current Excellent DC Current Gain Linearity Complement the 2SB1260U Low Collector-Emitter Saturation Voltage	GWSEMI 唯圣电子	GWSEMI

2SB126产品属性

类型
描述
Status：
新设计非推荐
封装：
MPT3
包装数量：
1000
最小独立包装数量：
1000
包装形态：
Taping
RoHS：
Yes
Grade：
Standard
Package Code：
SOT-89
JEITA Package：
SC-62
Package Size[mm]：
4.5x4.0 (t=1.5)
Number of terminal：
3
Polarity：
PNP
Collector Power dissipation PC[W]：
0.5
Collector-Emitter voltage VCEO1[V]：
-80.0
Collector current Io(Ic) [A]：
-1.0
hFE：
120 to 390
hFE (Min.)：
120
hFE (Max.)：
390
Mounting Style：
Surface mount
Storage Temperature (Min.)[°C]：
-55
Storage Temperature (Max.)[°C]：
150

2SB126供应商更多...

更新时间：2026-5-14 12:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海磐岳电子有限公司	2SB1260	ROHM	2023+	SOT-89	58000	进口原装,现货热卖	询价
深圳市凌旭科技有限公司	2SB1260	ROHM	2016+	SOT89	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市华睿芯科技有限公司	2SB1260	ROHM	24+	SOT89	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市盈慧通电子有限公司	2SB1260	CJ/长晶	2511	SOT-89	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
洪芯国际半导体（深圳）有限公司	2SB1260	CJ/长电	26+	原厂原封装	86720	全新原装正品价格最实惠假一赔百	询价
深圳市中联芯电子有限公司	2SB1260	CJ/长电/长晶	25+	SOT-89	9000	只做原装正品有挂有货假一赔十	询价
中天科工半导体（深圳）有限公司	2SB1260	SECOS/喜可士	25+	SOT-89	20300	SECOS/喜可士原装特价2SB1260即刻询购立享优惠#长期有货	询价
深圳市佳鑫美电子科技有限公司	2SB1260	ROHM	25+	SOT89	2987	只售原装自家现货!诚信经营!欢迎来电	询价
贸泽芯城（深圳）电子科技有限公司	2SB1260	长电/长晶	23+	SOT-89	30000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
现代芯城（深圳）科技有限公司	2SB1260(RANGE:180-390)		26+	N/A	52000	一级代理-主营优势-实惠价格-不悔选择	询价

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P103
P104
P105
P106
P107
P108
P109

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