Plastic-Encapsulate Transistors

FEATURES High Br e akdown Voltage and Current Excellent DC Current Gain Linearity Complement the 2SB1260U Low Collector-Emitter Saturation Voltage

PNP小信号三极管

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

POWER TRANSISTOR

POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)

PNP Plastic-Encapsulate Transistor

PNP Plastic-Encapsulate Transistor P/b Lead(Pb)-Free

丝印代码：TL；Power Transistor

Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.

Power Transistor (−80V, −1A)

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