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2SB1260晶体管资料

2SB1260别名：2SB1260三极管、2SB1260晶体管、2SB1260晶体三极管
2SB1260生产厂家：TOY
2SB1260制作材料：Si-PNP
2SB1260性质：表面帖装型（SMD）_低频或音频放大（LF）
2SB1260封装形式：直插封装
2SB1260极限工作电压：80V
2SB1260最大电流允许值：1A
2SB1260最大工作频率：100MHZ
2SB1260引脚数：3
2SB1260最大耗散功率：
2SB1260放大倍数：
2SB1260图片代号：H-100
2SB1260vtest：80
2SB1260htest：100000000
2SB1260atest：1
2SB1260wtest：0

2SB1260代换 2SB1260用什么型号代替：2SA1364,2SA1416,2SB766A,2SB803,2SB804,2SB1025,2SB1026,BCX53,

2SB1260价格

参考价格：￥1.2661

型号：2SB1260T100P 品牌：ROHM 备注：这里有2SB1260多少钱，2025年最近7天走势，今日出价，今日竞价，2SB1260批发/采购报价，2SB1260行情走势销售排行榜，2SB1260报价。

型号	功能描述	生产厂家&企业
2SB1260	PowerTransistor Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.	ROHMRohm 罗姆罗姆半导体集团
2SB1260	PNPPlastic-EncapsulateTransistor PNPPlastic-EncapsulateTransistor P/bLead(Pb)-Free	WEITRON Weitron Technology
2SB1260	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260	Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃	TELTokyo Electron Ltd. 东电电子东京电子有限公司
2SB1260	PowerTransistor Features ●Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A ●GoodhFElinearity. ●LowVCE(sat). ●Epitaxialplanartype ●PNPsilicontransistor	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司
2SB1260	TRANSISTOR(PNP) FEATURES ●PowerTransistor ●HighVoltageandCurrent ●LowCollector-emittersaturationvoltage ●Complementsthe2SD1898	HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司
2SB1260	-1A,-80VPNPPlasticEncapsulatedTransistor FEATURES ♦HighbreakdownvoltageandhighcurrentBVCEO=-80V,IC=-1A ♦GoodhFElinearity ♦Complementsto2SD1898	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司
2SB1260	SOT-89Plastic-EncapsulateTransistors FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃	WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司
2SB1260	PowerTransistor(??0V,??A) Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.	ROHMRohm 罗姆罗姆半导体集团
2SB1260	SiliconPNPtransistorinaSOT-89PlasticPackage Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Highbreakdownvoltage,goodhFElinearity,lowVCE(sat),complementsthe2SD1898. Applications Generalpoweramplifierapplications.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司
2SB1260	Plastic-EncapsulateTransistors FEATURES •Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A •GoodhFEVLinearity. •LowVCE(sat). •Complementsthe2SD1898.	HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司
2SB1260	TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.5W(Tamb=25℃) Collectorcurrent ICM:-1A Collector-basevoltage V(BR)CBO:-80V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司
2SB1260	SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●PowerTransistor ●HighVoltageandCurrent ●LowCollector-emittersaturationvoltage ●Complementsthe2SD1898	JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司
2SB1260	PowerTransistor(-80V,-1A) FEATURES ●Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A ●GoodhFEVLinearity. ●LowVCE(sat). ●Complementsthe2SD1898. APPLICATIONS ●EpitaxialplanartypePNPsilicontransistor	BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司
2SB1260	PowerTransistor(-80V,-1A) FEATURES Highbreakdownvoltageand highcurrent. BVCEO=-80V,IC=-1A GoodhFEVLinearity. LowVCE(sat). Complementsthe2SD1898. APPLICATIONS EpitaxialplanartypePNPsilicontransistor	DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司
2SB1260	Plastic-encapsulatePNPTransistors 文件：1.74143 Mbytes Page：2 Pages	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司
2SB1260	PowerTransistor 文件：154.56 Kbytes Page：3 Pages	ROHMRohm 罗姆罗姆半导体集团
2SB1260	PowerTransistor(??0V,??A) 文件：92.25 Kbytes Page：3 Pages	ROHMRohm 罗姆罗姆半导体集团
2SB1260	PowerTransistor(-80V,-1A) 文件：146.69 Kbytes Page：3 Pages	ROHMRohm 罗姆罗姆半导体集团
2SB1260	POWERTRANSISTOR 文件：236.3 Kbytes Page：4 Pages	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260	PowerTransistor(-80V,-1A) 文件：203.61 Kbytes Page：3 Pages	ROHMRohm 罗姆罗姆半导体集团
2SB1260	PowerTransistor(−80V,−1A) 文件：97.68 Kbytes Page：4 Pages	ROHMRohm 罗姆罗姆半导体集团
2SB1260L-P-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-P-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-P-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-P-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-P-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-P-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-Q-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-Q-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-Q-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-Q-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-Q-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-Q-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-R-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-R-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-R-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-R-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-R-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-R-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-X-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-X-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260L-X-TN3-T	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-P	PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2SB1260-P-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-P-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-P-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-P-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-P-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-P-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-Q	PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2SB1260-Q-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-Q-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-Q-AB3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-Q-TN3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-Q-TN3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-Q-TN3-R	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-R	PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2SB1260-R-AB3-B	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2SB1260-R-AB3-K	POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A GoodhFElinearity. *LowVCE(SAT)	UTCUnisonic Technologies 友顺友顺科技股份有限公司

2SB1260产品属性

类型
描述
型号
2SB1260
制造商
ROHM Semiconductor

2SB1260供应商更多...

更新时间：2025-7-5 18:35:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	2SB1260G-Q	UTC/友顺	25+	SOT-89	51848	百分百原装现货实单必成欢迎询价	询价
深圳市威雅利发展有限公司	2SB1260T100R	ROHM	11+	SOT-89	688	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市粤骏腾电子科技有限公司	2SB1260T100R	ROHM/罗姆	24+	SOT-89	1500	原装现货,专业配单专家	询价
深圳市航润创能电子集团有限公司	2SB1260T100R	ROHM/罗姆	21+	SOT-89	5215	只做原装,假一罚十	询价
深圳兆威电子有限公司	2SB1260T100Q	ROHM	23+	SOP89	999999	原装正品现货量大可订货	询价
深圳市南科功率半导体有限公司	2SB1260T100R	NK/南科功率	2025+	SOT-89	12138	国产南科平替供应大量	询价
深圳市汇莱威科技有限公司	2SB1260	ROHMCJ	2024	SOT-89	58209	16余年资质绝对原盒原盘代理渠道更多数量	询价
深圳市百域芯科技有限公司	2SB1260T100R	ROHM/罗姆	21+	SOT-89	2289	百域芯优势实单必成可开13点增值税	询价
深圳市振宏微科技有限公司	2SB1260	SOT-89	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市华斯顿科技有限公司	2SB1260T100Q	ROHM	25+23+	SOT-89	23786	绝对原装正品全新进口深圳现货	询价

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2020-4-24
2SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下：·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息）·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9

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2SB1386-P-PNP硅外延晶体管

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