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2SB1260晶体管资料
2SB1260别名：2SB1260三极管、2SB1260晶体管、2SB1260晶体三极管
2SB1260生产厂家：TOY
2SB1260制作材料：Si-PNP
2SB1260性质：表面帖装型 （SMD）_低频或音频放大 （LF）
2SB1260封装形式：直插封装
2SB1260极限工作电压：80V
2SB1260最大电流允许值：1A
2SB1260最大工作频率：100MHZ
2SB1260引脚数：3
2SB1260最大耗散功率：
2SB1260放大倍数：
2SB1260图片代号：H-100
2SB1260vtest：80
2SB1260htest：100000000
- 2SB1260atest：1
2SB1260wtest：0
2SB1260代换 2SB1260用什么型号代替：2SA1364,2SA1416,2SB766A,2SB803,2SB804,2SB1025,2SB1026,BCX53,
2SB1260价格
参考价格：￥1.2661
型号：2SB1260T100P 品牌：ROHM 备注：这里有2SB1260多少钱，2025年最近7天走势，今日出价，今日竞价，2SB1260批发/采购报价，2SB1260行情走势销售排行榜，2SB1260报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1260 | POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 |   | |
2SB1260 | PNP Plastic-Encapsulate Transistor PNP Plastic-Encapsulate Transistor P/b Lead(Pb)-Free | WEITRON | | |
2SB1260 | Power Transistor Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. | ROHM 罗姆 | | |
2SB1260 | Power Transistor (??0V, ??A) Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. | ROHM 罗姆 | | |
2SB1260 | Power Transistor(-80V,-1A) FEATURES ● High breakdown voltage and high current. BVCEO=-80V,IC=-1A ● Good hFEVLinearity. ● Low VCE(sat). ● Complements the 2SD1898. APPLICATIONS ● Epitaxial planar type PNP silicon transistor | BILIN 银河微电 | | |
2SB1260 | TRANSISTOR(PNP) FEATURES ● Power Transistor ● High Voltage and Current ● Low Collector-emitter saturation voltage ● Complements the 2SD1898 | HTSEMI 金誉半导体 | | |
2SB1260 | SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Power Transistor ● High Voltage and Current ● Low Collector-emitter saturation voltage ● Complements the 2SD1898 | JIANGSU 长电科技 | | |
2SB1260 | Power Transistor Features ● High breakdown voltage and high current.BVCEO= -80V, IC=-1A ● Good hFE linearity. ● Low VCE(sat). ● Epitaxial planar type ● PNP silicon transistor | KEXIN 科信电子 | | |
2SB1260 | -1 A, -80 V PNP Plastic Encapsulated Transistor FEATURES ♦ High breakdown voltage and high current BVCEO=-80V, IC=-1A ♦ Good hFE linearity ♦ Complements to 2SD1898 | SECOS 喜可士 | | |
2SB1260 | Power Transistor(-80V,-1A) FEATURES High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898. APPLICATIONS Epitaxial planar type PNP silicon transistor | DGNJDZ 南晶电子 | | |
2SB1260 | TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | |
2SB1260 | SOT-89 Plastic-Encapsulate Transistors FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WILLAS 威伦电子 | | |
2SB1260 | Plastic-Encapsulate Transistors FEATURES • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898. | HOTTECH 合科泰 | | |
2SB1260 | Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | | |
2SB1260 | Silicon PNP transistor in a SOT-89 Plastic Package Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features High breakdown voltage, good hFE linearity, low VCE(sat), complements the 2SD1898. Applications General power amplifier applications. | FOSHAN 蓝箭电子 | | |
2SB1260 | Bipolar Transistor | UTC 友顺 | | |
2SB1260 | 晶体管 | JSCJ 长晶科技 | | |
2SB1260 | Driver Transistor | ROHM 罗姆 | | |
2SB1260 | Plastic-encapsulate PNP Transistors 文件：1.74143 Mbytes Page：2 Pages | LUGUANG 鲁光电子 | | |
2SB1260 | Power Transistor (??0V, ??A) 文件：92.25 Kbytes Page：3 Pages | ROHM 罗姆 | | |
2SB1260 | Power Transistor 文件：154.56 Kbytes Page：3 Pages | ROHM 罗姆 | | |
2SB1260 | Power Transistor (-80V, -1A) 文件：146.69 Kbytes Page：3 Pages | ROHM 罗姆 | | |
2SB1260 | Power Transistor (−80V, −1A) 文件：97.68 Kbytes Page：4 Pages | ROHM 罗姆 | | |
2SB1260 | Power Transistor (-80V, -1A) 文件：203.61 Kbytes Page：3 Pages | ROHM 罗姆 | | |
2SB1260 | POWER TRANSISTOR 文件：236.3 Kbytes Page：4 Pages | UTC 友顺 | | |
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO | MCC | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO | MCC | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | | ||
POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) | UTC 友顺 | |
2SB1260产品属性
- 类型
描述
- 型号
2SB1260
- 制造商
ROHM Semiconductor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM |
2023+ |
SOT-89 |
58000 |
进口原装,现货热卖 |
|||
CJ/长晶 |
2511 |
SOT-89 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
长电/长晶 |
23+ |
SOT-89 |
30000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UTC/友顺 |
24+ |
NA/ |
11000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM/GC |
25+ |
SOT-23 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
ROHM/罗姆 |
2450+ |
SOT-89 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ROHM |
24+ |
SOT89 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SECOS/喜可士 |
25+ |
SOT-89 |
20300 |
SECOS/喜可士原装特价2SB1260即刻询购立享优惠#长期有货 |
|||
CJ/长电/长晶 |
24+ |
SOT-89 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ROHM |
25+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
2SB1260芯片相关品牌
2SB1260规格书下载地址
2SB1260参数引脚图相关
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2SB1260数据表相关新闻
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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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