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2SB1260晶体管资料

2SB1260别名：2SB1260三极管、2SB1260晶体管、2SB1260晶体三极管
2SB1260生产厂家：TOY
2SB1260制作材料：Si-PNP
2SB1260性质：表面帖装型（SMD）_低频或音频放大（LF）
2SB1260封装形式：直插封装
2SB1260极限工作电压：80V
2SB1260最大电流允许值：1A
2SB1260最大工作频率：100MHZ
2SB1260引脚数：3
2SB1260最大耗散功率：
2SB1260放大倍数：
2SB1260图片代号：H-100
2SB1260vtest：80
2SB1260htest：100000000
2SB1260atest：1
2SB1260wtest：0

2SB1260代换 2SB1260用什么型号代替：2SA1364,2SA1416,2SB766A,2SB803,2SB804,2SB1025,2SB1026,BCX53,

2SB1260价格

参考价格：￥1.2661

型号：2SB1260T100P 品牌：ROHM 备注：这里有2SB1260多少钱，2026年最近7天走势，今日出价，今日竞价，2SB1260批发/采购报价，2SB1260行情走势销售排行榜，2SB1260报价。

型号	功能描述	生产厂家企业	LOGO
2SB1260	丝印代码：TL；Power Transistor Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.	ROHM 罗姆	ROHM
2SB1260	PNP Plastic-Encapsulate Transistor PNP Plastic-Encapsulate Transistor P/b Lead(Pb)-Free	WEITRON	WEITRON
2SB1260	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260	Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL	TEL
2SB1260	TRANSISTOR(PNP) FEATURES ● Power Transistor ● High Voltage and Current ● Low Collector-emitter saturation voltage ● Complements the 2SD1898	HTSEMI 金誉半导体	HTSEMI
2SB1260	Power Transistor Features ● High breakdown voltage and high current.BVCEO= -80V, IC=-1A ● Good hFE linearity. ● Low VCE(sat). ● Epitaxial planar type ● PNP silicon transistor	KEXIN 科信电子	KEXIN
2SB1260	-1 A, -80 V PNP Plastic Encapsulated Transistor FEATURES ♦ High breakdown voltage and high current BVCEO=-80V, IC=-1A ♦ Good hFE linearity ♦ Complements to 2SD1898	SECOS 喜可士	SECOS
2SB1260	SOT-89 Plastic-Encapsulate Transistors FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WILLAS 威伦电子	WILLAS
2SB1260	Power Transistor (??0V, ??A) Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.	ROHM 罗姆	ROHM
2SB1260	Silicon PNP transistor in a SOT-89 Plastic Package Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features High breakdown voltage, good hFE linearity, low VCE(sat), complements the 2SD1898. Applications General power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB1260	Plastic-Encapsulate Transistors FEATURES • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898.	HOTTECH 合科泰	HOTTECH
2SB1260	TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SB1260	SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Power Transistor ● High Voltage and Current ● Low Collector-emitter saturation voltage ● Complements the 2SD1898	JIANGSU 长电科技	JIANGSU
2SB1260	Power Transistor(-80V,-1A) FEATURES ● High breakdown voltage and high current. BVCEO=-80V,IC=-1A ● Good hFEVLinearity. ● Low VCE(sat). ● Complements the 2SD1898. APPLICATIONS ● Epitaxial planar type PNP silicon transistor	BILIN 银河微电	BILIN
2SB1260	丝印代码：ZL；Power Transistor(-80V,-1A) FEATURES High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898. APPLICATIONS Epitaxial planar type PNP silicon transistor	DGNJDZ 南晶电子	DGNJDZ
2SB1260	Driver Transistor •启动用表面安装型三极管;	ROHM 罗姆	ROHM
2SB1260	Bipolar Transistor	UTC 友顺	UTC
2SB1260	晶体管	JSCJ 长晶科技	JSCJ
2SB1260	Plastic-encapsulate PNP Transistors 文件：1.74143 Mbytes Page：2 Pages	LUGUANG 鲁光电子	LUGUANG
2SB1260	丝印代码：QR；Power Transistor 文件：154.56 Kbytes Page：3 Pages	ROHM 罗姆	ROHM
2SB1260	Power Transistor (??0V, ??A) 文件：92.25 Kbytes Page：3 Pages	ROHM 罗姆	ROHM
2SB1260	POWER TRANSISTOR 文件：236.3 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1260	丝印代码：QR；Power Transistor (-80V, -1A) 文件：146.69 Kbytes Page：3 Pages	ROHM 罗姆	ROHM
2SB1260	Power Transistor (-80V, -1A) 文件：203.61 Kbytes Page：3 Pages	ROHM 罗姆	ROHM
2SB1260	Power Transistor (−80V, −1A) 文件：97.68 Kbytes Page：4 Pages	ROHM 罗姆	ROHM
2SB1260L-P-AB3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-P-AB3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-P-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-P-TN3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-P-TN3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-P-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-Q-AB3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-Q-AB3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-Q-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-Q-TN3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-Q-TN3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-Q-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-R-AB3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-R-AB3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-R-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-R-TN3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-R-TN3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-R-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-X-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-X-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260L-X-TN3-T	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-P	PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO	MCC	MCC
2SB1260-P-AB3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-P-AB3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-P-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-P-TN3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-P-TN3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-P-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-Q	PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -1A • Collector-base voltage: V(BR)CBO	MCC	MCC
2SB1260-Q-AB3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-Q-AB3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-Q-AB3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-Q-TN3-B	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-Q-TN3-K	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC
2SB1260-Q-TN3-R	POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)	UTC 友顺	UTC

2SB1260产品属性

类型
描述
Status：
新设计非推荐
封装：
MPT3
包装数量：
1000
最小独立包装数量：
1000
包装形态：
Taping
RoHS：
Yes
Grade：
Standard
Package Code：
SOT-89
JEITA Package：
SC-62
Package Size[mm]：
4.5x4.0 (t=1.5)
Number of terminal：
3
Polarity：
PNP
Collector Power dissipation PC[W]：
0.5
Collector-Emitter voltage VCEO1[V]：
-80.0
Collector current Io(Ic) [A]：
-1.0
hFE：
120 to 390
hFE (Min.)：
120
hFE (Max.)：
390
Mounting Style：
Surface mount
Storage Temperature (Min.)[°C]：
-55
Storage Temperature (Max.)[°C]：
150

2SB1260供应商更多...

更新时间：2026-5-14 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	2SB1260	ROHM	2016+	SOT89	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市华睿芯科技有限公司	2SB1260	ROHM	24+	SOT89	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
中天科工半导体（深圳）有限公司	2SB1260	SECOS/喜可士	25+	SOT-89	20300	SECOS/喜可士原装特价2SB1260即刻询购立享优惠#长期有货	询价
深圳市科恒伟业电子有限公司	2SB1260	ROHM/罗姆	2450+	SOT-89	9850	只做原厂原装正品现货或订货假一赔十!	询价
深圳市昌和盛利电子有限公司	2SB1260	ROHM	26+	SOT89	11092	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市腾亿芯科技有限公司	2SB1260	CJ长电	25+	SOT-89	20000	原装	询价
上海鑫科润电子科技有限公司	2SB1260	ROHM	1216+	SOT	3218	原装现货海量库存欢迎咨询	询价
深圳市振宏微科技有限公司	2SB1260	SOT-89	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳诚思涵科技有限公司	2SB1260	ROHM	18+	SOT89	85600	保证进口原装可开17%增值税发票	询价
深圳市禾兴威科技有限公司	2SB1260	Rohm(罗姆)	23+	NA	6800	原装正品,力挺实单	询价

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DdatasheetPDF页码索引

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2SB1260晶体管资料

2SB1260价格

2SB1260产品属性

2SB1260供应商更多...

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2SB1260规格书下载地址

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DdatasheetPDF页码索引