| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1260-R | PNPPlastic-EncapsulateTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Powerdissipation:PCM=0.5W(Tamb=25°C) •Collectorcurrent:ICM=-1A •Collector-basevoltage:V(BR)CBO | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  |   |
2SB1260-R | PNPTransistors 文件：1.0138 Mbytes Page：2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | |
2SB1260-R | PNPPlastic-EncapsulateTransistors 文件：206.2 Kbytes Page：2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | |
2SB1260-R | Plastic-encapsulatePNPTransistors 文件：1.74143 Mbytes Page：2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 |  | | |
PowerTransistor Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733. | ROHMRohm 罗姆罗姆半导体集团 |  | | |
PNPPlastic-EncapsulateTransistor PNPPlastic-EncapsulateTransistor P/bLead(Pb)-Free | WEITRON Weitron Technology |  | | |
POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
PowerTransistor(−80V,−1A) 文件：97.68 Kbytes Page：4 Pages | ROHMRohm 罗姆罗姆半导体集团 | | | |
POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
POWERTRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MCC |
23+ |
SOT-89 |
45000 |
原装正品现货 |
|||
ROHM |
25+23+ |
SOT-89 |
28454 |
绝对原装正品全新进口深圳现货 |
|||
ROHM |
24+ |
SOT-89 |
6701 |
新进库存/原装 |
|||
MCC/美微科 |
2511 |
SOT-89 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ROHM/罗姆 |
2447 |
SOT89 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CJ |
2111 |
SOT-89 |
35000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CJ |
21+ |
SOT-89 |
4000 |
原装现货假一赔十 |
|||
NK/南科功率 |
2025+ |
SOT-89 |
986966 |
国产 |
|||
长电 |
2020+ |
SOT-89 |
70000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
CJ |
23+ |
SOT-89 |
50000 |
全新原装正品现货,支持订货 |
2SB1260-R芯片相关品牌
2SB1260-R规格书下载地址
2SB1260-R参数引脚图相关
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- 4921
- 4899
- 485接口
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- 2SB1260-X-TN3-T
- 2SB1260-X-TN3-R
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- 2SB1260T100R
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- 2SB1260-R-TN3-R
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- 2SB1260-Q-AB3-R
- 2SB1260-Q-AB3-K
- 2SB1260-Q-AB3-B
- 2SB1260-Q
- 2SB1260-P-TN3-R
- 2SB1260-P-TN3-K
- 2SB1260-P-TN3-B
- 2SB1260-P-AB3-R
- 2SB1260-P-AB3-K
- 2SB1260-P-AB3-B
- 2SB1260-P_13
- 2SB1260-P
- 2SB1260L-X-TN3-T
- 2SB1260L-X-TN3-R
- 2SB1260L-X-AB3-R
- 2SB1260L-R-TN3-R
- 2SB1260L-R-TN3-K
- 2SB1260
- 2SB1259
- 2SB1258
- 2SB1257
- 2SB1256
- 2SB1255
- 2SB1254
- 2SB1253
- 2SB1252
- 2SB1245
- 2SB1244
- 2SB1243
- 2SB1241
- 2SB1240
- 2SB1239
- 2SB1238
- 2SB1237
- 2SB1236
- 2SB1235
- 2SB1234
2SB1260-R数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SA2198
2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下：·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息）·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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