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2SB110晶体管资料
2SB110别名:2SB110三极管、2SB110晶体管、2SB110晶体三极管
2SB110生产厂家:日本日电公司
2SB110制作材料:Ge-PNP
2SB110性质:低频或音频放大 (LF)
2SB110封装形式:直插封装
2SB110极限工作电压:25V
2SB110最大电流允许值:0.05A
2SB110最大工作频率:<1MHZ或未知
2SB110引脚数:3
2SB110最大耗散功率:0.1W
2SB110放大倍数:β>18
2SB110图片代号:C-47
2SB110vtest:25
2SB110htest:999900
- 2SB110atest:.05
2SB110wtest:.1
2SB110代换 2SB110用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX51B,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
LOWFREQUENCYPOWERAMPLIFIERCOMPLEMENTARYPAIRWITH2SD1601,2SD1602 Application Lowfrequencypoweramplifier | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SD1601 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Forlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SD1601 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Forlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2SD1601 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Forlowfrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEo=-60V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-3V,lc=-2A) •ComplementtoType2SD1601 APPLICATIONS •Designedforlowfrequencypoweramplifiersapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220package ·Complementtotype2SD1602 ·DARLINGTON ·HighDCcurrentgain APPLICATIONS ·Forlowfrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220package ·Complementtotype2SD1602 ·DARLINGTON ·HighDCcurrentgain APPLICATIONS ·Forlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220package ·Complementtotype2SD1602 ·DARLINGTON ·HighDCcurrentgain APPLICATIONS ·Forlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
LOWFREQUENCYPOWERAMPLIFIERCOMPLEMENTARYPAIRWITH2SD1601,2SD1602 Application Lowfrequencypoweramplifier | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPNPTripleDiffused Application Lowfrequencypoweramplifier | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCdurrentgain ·Lowcollectorsaturationvoltage ·Complementtotype2SD1603 APPLICATIONS ·Designedforuseinlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCdurrentgain ·Lowcollectorsaturationvoltage ·Complementtotype2SD1603 APPLICATIONS ·Designedforuseinlowfrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCdurrentgain ·Lowcollectorsaturationvoltage ·Complementtotype2SD1603 APPLICATIONS ·Designedforuseinlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCdurrentgain •Complementtotype2SD1605 APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCdurrentgain •Complementtotype2SD1605 APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCdurrentgain •Complementtotype2SD1605 APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-120V(Min) •HighDCCurrentGain-:hFE=1000(Min)@(VCE=-3V,lc=-1.5 •ComplementtoType2SD1605 APPLICATIONS •Designedforlowfrequencypoweramplifiersapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCdurrentgain •Complementtotype2SD1606 APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCdurrentgain •Complementtotype2SD1606 APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCdurrentgain •Complementtotype2SD1606 APPLICATIONS •Designedforuseinlowfrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
MediumSpeedSwitchingComplementaryPairwith2SD1608 MediumSpeedSwitchingComplementaryPairwith2SD1608 Features •HighDCcurrentgain(hFE) •Highspeedswitching •FULLPackpackageforsimplifiedmountingonaheatsinkwithonescrew | PanasonicPanasonic Corporation 松下松下电器 | |||
SILICONPNPEPITAXIAL(LOWFREQUENCYHIGHVOLTAGEAMPLIFIER) COMPLEMENTARYPAIR2SD1609and2SD1610(NPN) | HitachiHitachi, Ltd. 日立公司 | |||
iscSiliconPNPDarlingtonPowerTransistor 文件:154.09 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPDarlingtonPowerTransistor 文件:183.28 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:100.76 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:162.43 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:162.43 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:93.01 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPDarlingtonPowerTransistor 文件:186.44 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:156.32 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:156.32 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:101.53 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPTripleDiffused 文件:152.74 Kbytes Page:8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPNPPowerTransistors 文件:158.19 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:158.19 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:98.28 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:153.64 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:153.64 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:98.77 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:161.52 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:161.52 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 |
2SB110产品属性
- 类型
描述
- 型号
2SB110
- 制造商
ISC
- 制造商全称
Inchange Semiconductor Company Limited
- 功能描述
Silicon PNP Power Transistors
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
||||
MAT |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
HITACHI |
22+ |
TO-126 |
5000 |
||||
HITACHI/日立 |
23+ |
NA/ |
6340 |
原装现货,当天可交货,原型号开票 |
|||
HITACHI/日立 |
21+ |
TO-126 |
3090 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MAT |
1738+ |
TO-220F |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
HIT |
16+ |
原厂封装 |
2000 |
原装现货假一罚十 |
|||
HITACHI/日立 |
21+ |
TO-126 |
3090 |
原装现货假一赔十 |
|||
HIT |
23+ |
TO-126 |
5000 |
专做原装正品,假一罚百! |
|||
HITACHI/日立 |
2022 |
SIP-3 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
2SB110规格书下载地址
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2SB110数据表相关新闻
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支持实单价格优势有单必成
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2SA2198,全新原装当天发货或门市自取0755-82732291.
2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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