PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, so

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • High DC current gain and excellent linearity • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • High DC current gain and excellent linearity • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, so