PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, so

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • High DC current gain and excellent linearity • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

丝印代码：HFE2；SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1649 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor dri • Available for high-current control in small dimension\n• Z type is a lead processed product and is deal for mounting a hybrid IC.\n• Mold package that does not require an insulating board or insulation bushing\n• Low collector saturation voltage: VCE(sat) = −0.3 V MAX. (IC = −3 A)\n• Fast switchin;

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1649 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor dri • Available for high-current control in small dimension\n• Z type is a lead processed product and is deal for mounting a hybrid IC.\n• Mold package that does not require an insulating board or insulation bushing\n• Low collector saturation voltage: VCE(sat) = −0.3 V MAX. (IC = −3 A)\n• Fast switchin;

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • High DC current gain and excellent linearity • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, so

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

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