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位置：首页 > IC中文资料第1540页 > 2SA161

2SA161晶体管资料

  • 2SA161别名：2SA161三极管、2SA161晶体管、2SA161晶体三极管

  • 2SA161生产厂家：日本索尼公司

  • 2SA161制作材料：Ge-PNP

  • 2SA161性质：甚高频 （VHF）_超高频/特高频 （UHF）

  • 2SA161封装形式：直插封装

  • 2SA161极限工作电压：20V

  • 2SA161最大电流允许值：0.015A

  • 2SA161最大工作频率：500MHZ

  • 2SA161引脚数：3

  • 2SA161最大耗散功率：

  • 2SA161放大倍数：

  • 2SA161图片代号：D-13

  • 2SA161vtest：20

  • 2SA161htest：500000000

  • 2SA161atest：0.015

  • 2SA161wtest：0

  • 2SA161代换 2SA161用什么型号代替：AF109R,AF139,AF239(S),2N3279,2N3280,2N3281,2N3282,2N3283,2N3284,2N3285,2N3286,3AG80D,

2SA161价格

参考价格：￥0.2922

型号：2SA1618-GR(TE85L,F 品牌：Toshiba 备注：这里有2SA161多少钱，2025年最近7天走势，今日出价，今日竞价，2SA161批发/采购报价，2SA161行情走势销售排行榜，2SA161报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SA1610

HIGHSPEEDSWITCHINGPNPSILICONEPITAXIALTRANSISTOR

HIGHSPEEDSWITCHINGPNPSILICONEPITAXIALTRANSISTOR

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SA1610

SILICONTRANSISTOR

HIGHSPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTOR

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SA1611

SILICONTRANSISTOR

AUDIOFREQUENCY,GENERALPURPOSEAMPLIFIER PNPSILICONEPITAXIALTRANSISTOR

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SA1611

PNPPlastic-EncapsulateTransistors

FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SA1611

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERPNPSILICONEPITAXIALTRANSISTOR

FEATURES ●Complementaryto2SC4177 ●HighDCCurrentGain:hFE=200TYP.(VCE=-6.0V,Ic=-1.0mA) ●HighVoltage:VCEO=-50VCE

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SA1611

Plastic-EncapsulatedTransistors

SOT-323Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:-0.1A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2SA1611

PNPSiliconEpitaxia

■Features ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1611

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES HighDCCurrentGain HighVoltage Complementaryto2SC4177

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SA1611

PNPSiliconPlasticEncapsulatedTransistor

-0.1A,-60VPNPSiliconPlasticEncapsulatedTransistor FEATURES HighDCCurrentGain HighVoltage Complementaryto2SC4177

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SA1611

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SA1611

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:-0.1A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SA1611

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●HighvoltageVCEO=-50V. ●ExcellentHFELinearity. ●HighDCcurrentgain:hFE=200typ. ●Complementaryto2SC4177. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplications.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA1611

SOT-323Plastic-EncapsulateTransistors

FEATURES HighDCCurrentGain HighVoltage Complementaryto2SC4177

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SA1611M4

PNPPlastic-EncapsulateTransistors

FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SA1611M5

PNPPlastic-EncapsulateTransistors

FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SA1611M6

PNPPlastic-EncapsulateTransistors

FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SA1611M7

PNPPlastic-EncapsulateTransistors

FEATURES ●HighDCCurrentGain ●HighVoltage ●Complementaryto2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SA1611W

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor FEATURES HighvoltageVCEO=-50V. ExcellentHFELinearity. HighDCcurrentgain:hFE=200typ. Complementaryto2SC4177. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA1612

AUDIOFREQUENCYHIGHGAINAMPLIFIERPNPSILICONEPITAXIALTRANSISTOR

FEATURES ●Complementaryto2SC4180 ●HighDCCurrentGain:hFE500TYP.(VCE=-6.0V,IC=-1.0mA)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SA1612

PNPSiliconEpitaxialTransistor

■Features ●HighDCCurrentGain ●Complementaryto2SC4180

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1612

SILICONTRANSISTOR

AUDIOFREQUENCYHIGHGAINAMPLIFIER PNPSILICONEPITAXIALTRANSISTOR

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SA1613

SILICONTRANSISTOR

AUDIOFREQUENCYAMPLIFIER,SWITCHING PNPSILICONEPITAXIALTRANSISTOR

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SA1615

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA1615

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA1615

iscSiliconPNPPowerTransistor

DESCRIPTION •Largecurrentcapacity:IC(DC)=-10AIC(pulse)=-15A •HighhFEandlowsaturationvoltage: hFE=200min(VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(IC=-4A,IB=-0.05A) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APP

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA1615

SILICONPOWERTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING DESCRIPTION The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandare idealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES •Largecurrent

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SA1615

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●LargeCurrentCapacity ●HighhFEandLowCollectorSaturationVoltage

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SA1615

PNPSiliconEpitaxialTransistorforHigh-speedSwitching

FEATURES ●Largecurrentcapacity: IC(DC):-10A,IC(pulse):-15A. ●HighhFEandlowcollectorsaturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A)

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA1615

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES •Largecurrentcapacity: IC

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SA1615

PTYPETTANSISTORS

PTYPETTANSISTORS-10A The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmallduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURE ●Largecurrentcapacity: Ic(DC):-10A,Ic(pulse):-15A ●HighhFEand

STANSON

Stanson Technology

STANSON
2SA1615-251

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA1615-252

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA1615-Z

PTYPETTANSISTORS

PTYPETTANSISTORS-10A The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmallduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURE ●Largecurrentcapacity: Ic(DC):-10A,Ic(pulse):-15A ●HighhFEand

STANSON

Stanson Technology

STANSON
2SA1615-Z

SiliconPowerTransistors

Features ●Largecurrentcapacity. ●HighhFEandlowcollectorsaturationvoltage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1615-Z

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES •Largecurrentcapacity: IC

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SA1615-Z

iscSiliconPNPPowerTransistor

DESCRIPTION •Largecurrentcapacity:IC(DC)=-10AIC(pulse)=-15A •HighhFEandlowsaturationvoltage: hFE=200min(VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(IC=-4A,IB=-0.05A) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APP

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA1617

SiliconPNPEpitaxial

SiliconPNPEpitaxial Application Highvoltageamplifier

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SA1617

SiliconPNPEpitaxial

SiliconPNPEpitaxial

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1618

TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Smallpackage(dualtype) •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •HighhFE:hFE=120to400 •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •Complementaryto2SC4207

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1619

SiliconPNPepitaxialplanertype

■Features ●Complementarypairwith2SC4208and2SC4208A. ●Allowingsupplywiththeradialtapingandautomaticinsertion possible.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SA1619A

SiliconPNPepitaxialplanertype

■Features ●Complementarypairwith2SC4208and2SC4208A. ●Allowingsupplywiththeradialtapingandautomaticinsertion possible.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SA1611

PNPSiliconEpitaxialPlanarTransistor

文件：159.36 Kbytes Page：4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA1611_15

PNPTRANSISTOR

文件：124.09 Kbytes Page：2 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SA1611_15

PNPSiliconPlasticEncapsulatedTransistor

文件：109.78 Kbytes Page：1 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SA1611_15

PNPTransistors

文件：1.17859 Mbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1611_17

PNPSiliconEpitaxialPlanarTransistor

文件：159.36 Kbytes Page：4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA1611-M4

PNPTransistors

文件：1.17859 Mbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1611-M5

PNPTransistors

文件：1.17859 Mbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1611-M6

PNPTransistors

文件：1.17859 Mbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1611-M7

PNPTransistors

文件：1.17859 Mbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1612_15

PNPTransistors

文件：1.21946 Mbytes Page：3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1612-C15

PNPTransistors

文件：1.21946 Mbytes Page：3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1612-C16

PNPTransistors

文件：1.21946 Mbytes Page：3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1612-C17

PNPTransistors

文件：1.21946 Mbytes Page：3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1612-C18

PNPTransistors

文件：1.21946 Mbytes Page：3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA1615_15

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING

文件：239.1 Kbytes Page：7 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SA1618

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

文件：214.16 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1618

AudioFrequencyGeneralPurposeAmplifierApplications

文件：396.41 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1618_07

AudioFrequencyGeneralPurposeAmplifierApplications

文件：396.41 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA1618-GR

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

文件：214.16 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

2SA161产品属性

  • 类型

    描述

  • 型号

    2SA161

  • 制造商

    Renesas Electronics

  • 功能描述

    PNP

2SA161供应商更多...

更新时间：2025-6-3 14:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市博浩通科技有限公司
2SA1619ARA
PANASONIC
23+
TO-92NL
7750
全新原装优势
询价
深圳市豪迈兴电子有限公司
2SA162
NEC
24+
CAN4
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市航润创能电子集团有限公司
2SA1620-Y
TOSHIBA
21+
SOT23
1245
原装现货假一赔十
询价
深圳市河锋鑫科技有限公司
2SA1620
TOSHIBA/东芝
20+
SOT-23
120000
只做原装 可免费提供样品
询价
深圳市南科功率半导体有限公司
2SA1620
NK/南科功率
2025+
SOT-23
986966
国产
询价
深圳市亿智腾科技有限公司
2SA1619
松下
24+
TO-92
6430
原装现货/欢迎来电咨询
询价
深圳市弘为电子有限公司
2SA1620-Y
TOSHIBA
24+
SOT23
3000
原装现货假一罚十
询价
深圳市向鸿伟业电子有限公司
2SA1620Y(TE85L)
TOSHIBA/东芝
2406+
1850
诚信经营!进口原装!量大价优!
询价
深圳市联世界科技有限公司
2SA1619AR(TA)
N/A
24+/25+
3000
原装正品现货库存价优
询价
深圳市富芯乐电子科技有限公司
2SA1620
TOSHIBA
24+
SOT-23
4000
只做原装正品现货 欢迎来电查询15919825718
询价

2SA161芯片相关品牌

  • ALPS
  • CRYSTEKCRYSTAL
  • Dallas
  • Hynix
  • MIC
  • MuRata
  • MURATA1
  • PERICOM
  • SAVANTIC
  • TAITRON
  • TECHPUBLIC
  • YEONHO

2SA161规格书下载地址

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