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2SA1615晶体管资料
2SA1615别名：2SA1615三极管、2SA1615晶体管、2SA1615晶体三极管
2SA1615生产厂家：日本日电公司
2SA1615制作材料：Si-PNP
2SA1615性质：高速开关 （SS）_功率放大 （L）
2SA1615封装形式：
2SA1615极限工作电压：30V
2SA1615最大电流允许值：10A
2SA1615最大工作频率：180MHZ
2SA1615引脚数：
2SA1615最大耗散功率：15W
2SA1615放大倍数：
2SA1615图片代号：NO
2SA1615vtest：30
2SA1615htest：180000000
- 2SA1615atest：10
2SA1615wtest：15
2SA1615代换 2SA1615用什么型号代替：2SB936,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SA1615 | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC | NEC 瑞萨 |   | |
2SA1615 | SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current | RENESAS 瑞萨 | | |
2SA1615 | PNP Silicon Epitaxial Transistor for High-speed Switching FEATURES ● Large current capacity: IC(DC):-10A,IC(pulse):-15A. ● High hFE and low collector saturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A) | BILIN 银河微电 | | |
2SA1615 | isc Silicon PNP Power Transistor DESCRIPTION • Large current capacity:IC(DC)= -10A IC(pulse)=-15A • High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APP | ISC 无锡固电 | | |
2SA1615 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency | ISC 无锡固电 | | |
2SA1615 | Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency | ISC 无锡固电 | | |
2SA1615 | TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Large Current Capacity ● High hFE and Low Collector Saturation Voltage | JIANGSU 长电科技 | | |
2SA1615 | P TYPE TTANSISTORS P TYPE TTANSISTORS -10A The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURE ● Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A ● High hFE and | STANSON 司坦森 | | |
2SA1615 | 晶体管 | JSCJ 长晶科技 | | |
2SA1615 | Bipolar Power Transistors | RENESAS 瑞萨 | | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency | ISC 无锡固电 | | ||
Silicon Power Transistors Features ● Large current capacity. ● High hFE and low collector saturation voltage. | KEXIN 科信电子 | | ||
P TYPE TTANSISTORS P TYPE TTANSISTORS -10A The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURE ● Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A ● High hFE and | STANSON 司坦森 | | ||
isc Silicon PNP Power Transistor DESCRIPTION • Large current capacity:IC(DC)= -10A IC(pulse)=-15A • High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APP | ISC 无锡固电 | | ||
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC | NEC 瑞萨 | | ||
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 文件：239.1 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Bipolar Power Transistors | RENESAS 瑞萨 | |
2SA1615产品属性
- 类型
描述
- 型号
2SA1615
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
9177 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
2016+ |
TO-251 |
4000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
23+ |
SOT252 |
20000 |
全新原装假一赔十 |
||||
NEC |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
24+ |
TO252 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ROHM |
24+ |
TO-252 |
96000 |
公司大量原装现货,欢迎来电 |
|||
NEC |
24+ |
SOT-252 |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
NEC |
SOT-252 |
44600 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEC |
23+ |
TO252 |
3001 |
正规渠道,只有原装! |
|||
RENESAS/瑞萨 |
TO252 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
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2SA1615规格书下载地址
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2SA1615数据表相关新闻
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DdatasheetPDF页码索引
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