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2SA1615晶体管资料

  • 2SA1615别名:2SA1615三极管、2SA1615晶体管、2SA1615晶体三极管

  • 2SA1615生产厂家:日本日电公司

  • 2SA1615制作材料:Si-PNP

  • 2SA1615性质:高速开关 (SS)_功率放大 (L)

  • 2SA1615封装形式

  • 2SA1615极限工作电压:30V

  • 2SA1615最大电流允许值:10A

  • 2SA1615最大工作频率:180MHZ

  • 2SA1615引脚数

  • 2SA1615最大耗散功率:15W

  • 2SA1615放大倍数

  • 2SA1615图片代号:NO

  • 2SA1615vtest:30

  • 2SA1615htest:180000000

  • 2SA1615atest:10

  • 2SA1615wtest:15

  • 2SA1615代换 2SA1615用什么型号代替:2SB936,

型号 功能描述 生产厂家 企业 LOGO 操作
2SA1615

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC

NEC

瑞萨

2SA1615

P TYPE TTANSISTORS

P TYPE TTANSISTORS -10A The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURE ● Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A ● High hFE and

STANSON

司坦森

2SA1615

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Large Current Capacity ● High hFE and Low Collector Saturation Voltage

JIANGSU

长电科技

2SA1615

PNP Silicon Epitaxial Transistor for High-speed Switching

FEATURES ● Large current capacity: IC(DC):-10A,IC(pulse):-15A. ● High hFE and low collector saturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A)

BILIN

银河微电

2SA1615

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacity:IC(DC)= -10A IC(pulse)=-15A • High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

ISC

无锡固电

2SA1615

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current

RENESAS

瑞萨

2SA1615

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

ISC

无锡固电

2SA1615

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

ISC

无锡固电

2SA1615

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. • Large current capacity: IC(DC) = −10 A, IC(pulse) = −15 A\n• High hFE and low collector saturation voltage: hFE = 200 MIN. (VCE = −2.0 V, IC = −0.5 A) VCE(sat) ≤ −0.25 V (IC = −4.0 A, IB = −0.05 A);

RENESAS

瑞萨

2SA1615

晶体管

JSCJ

长晶科技

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

ISC

无锡固电

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. • Large current capacity: IC(DC) = −10 A, IC(pulse) = −15 A\n• High hFE and low collector saturation voltage: hFE = 200 MIN. (VCE = −2.0 V, IC = −0.5 A) VCE(sat) ≤ −0.25 V (IC = −4.0 A, IB = −0.05 A);

RENESAS

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacity:IC(DC)= -10A IC(pulse)=-15A • High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

ISC

无锡固电

P TYPE TTANSISTORS

P TYPE TTANSISTORS -10A The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURE ● Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A ● High hFE and

STANSON

司坦森

Silicon Power Transistors

Features ● Large current capacity. ● High hFE and low collector saturation voltage.

KEXIN

科信电子

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC

NEC

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

文件:239.1 Kbytes Page:7 Pages

RENESAS

瑞萨

2SA1615产品属性

  • 类型

    描述

  • Vcbo (V):

    -30

  • VCEO (V):

    -20

  • Vebo (V):

    -10

  • IC @25 °C (A):

    -10

  • VCE (sat) (V):

    -0.25

  • hFE:

    200-600

  • Pc (W):

    15

  • fT (Typical) (GHz):

    0.18

  • Cob (Typical) (pF):

    220

更新时间:2026-5-14 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
2016+
TO-251
4000
只做原装,假一罚十,公司可开17%增值税发票!
23+
SOT252
20000
全新原装假一赔十
NEC
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
NEC
24+
TO252
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
RENESAS
TO252
30000000
原装进口中国百强元器件分销企业 专注RENESAS十年 公司大量RENESAS现货 欢迎您的咨询 百年不变 服务至上
NEC
26+
TO-252
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
NEC
24+
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
25+
TO252
20000
原装
NEC
23+
TO252
3001
正规渠道,只有原装!
NEC
18+
TO-252
85600
保证进口原装可开17%增值税发票

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