2SA1615晶体管资料

  • 2SA1615别名:2SA1615三极管、2SA1615晶体管、2SA1615晶体三极管

  • 2SA1615生产厂家:日本日电公司

  • 2SA1615制作材料:Si-PNP

  • 2SA1615性质:高速开关 (SS)_功率放大 (L)

  • 2SA1615封装形式

  • 2SA1615极限工作电压:30V

  • 2SA1615最大电流允许值:10A

  • 2SA1615最大工作频率:180MHZ

  • 2SA1615引脚数

  • 2SA1615最大耗散功率:15W

  • 2SA1615放大倍数

  • 2SA1615图片代号:NO

  • 2SA1615vtest:30

  • 2SA1615htest:180000000

  • 2SA1615atest:10

  • 2SA1615wtest:15

  • 2SA1615代换 2SA1615用什么型号代替:2SB936,

型号 功能描述 生产厂家 企业 LOGO 操作
2SA1615

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC

NEC

瑞萨

2SA1615

P TYPE TTANSISTORS

P TYPE TTANSISTORS -10A The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURE ● Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A ● High hFE and

STANSON

司坦森

2SA1615

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Large Current Capacity ● High hFE and Low Collector Saturation Voltage

JIANGSU

长电科技

2SA1615

PNP Silicon Epitaxial Transistor for High-speed Switching

FEATURES ● Large current capacity: IC(DC):-10A,IC(pulse):-15A. ● High hFE and low collector saturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A)

BILIN

银河微电

2SA1615

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacity:IC(DC)= -10A IC(pulse)=-15A • High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

ISC

无锡固电

2SA1615

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current

RENESAS

瑞萨

2SA1615

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

ISC

无锡固电

2SA1615

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

ISC

无锡固电

2SA1615

晶体管

JSCJ

长晶科技

2SA1615

Bipolar Power Transistors

RENESAS

瑞萨

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Ultrahigh-speed switching APPLICATIONS The 2SA1615 is available for the large current control in small dimension due to the low saturation and is ideal for high efficiency

ISC

无锡固电

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacity:IC(DC)= -10A IC(pulse)=-15A • High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

ISC

无锡固电

P TYPE TTANSISTORS

P TYPE TTANSISTORS -10A The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURE ● Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A ● High hFE and

STANSON

司坦森

Silicon Power Transistors

Features ● Large current capacity. ● High hFE and low collector saturation voltage.

KEXIN

科信电子

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES • Large current capacity: IC

NEC

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

文件:239.1 Kbytes Page:7 Pages

RENESAS

瑞萨

Bipolar Power Transistors

RENESAS

瑞萨

2SA1615产品属性

  • 类型

    描述

  • 型号

    2SA1615

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-10-31 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
TO252
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
NEC
24+
NA/
45
优势代理渠道,原装正品,可全系列订货开增值税票
SOT252
2145
全新原装进口自己库存优势
NEC
24+
TO-252
5000
只做原装正品现货 欢迎来电查询15919825718
NEC
NEW
TO-252
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
NEC
TO-251
8560
一级代理 原装正品假一罚十价格优势长期供货
NEC
25+
TO-251
880000
明嘉莱只做原装正品现货
NEC
24+
TO-252
3690
只做原厂渠道 可追溯货源
ROHM
24+
TO-252
96000
公司大量原装现货,欢迎来电
NEC
24+
TO-252
86200
新进库存/原装

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