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2SA1611晶体管资料

  • 2SA1611别名:2SA1611三极管、2SA1611晶体管、2SA1611晶体三极管

  • 2SA1611生产厂家:日本日电公司

  • 2SA1611制作材料:Si-PNP

  • 2SA1611性质:表面帖装型 (SMD)_通用型 (Uni)

  • 2SA1611封装形式:贴片封装

  • 2SA1611极限工作电压:60V

  • 2SA1611最大电流允许值:0.1A

  • 2SA1611最大工作频率:180MHZ

  • 2SA1611引脚数:3

  • 2SA1611最大耗散功率

  • 2SA1611放大倍数

  • 2SA1611图片代号:H-15

  • 2SA1611vtest:60

  • 2SA1611htest:180000000

  • 2SA1611atest:0.1

  • 2SA1611wtest:0

  • 2SA1611代换 2SA1611用什么型号代替:2SA1578,2SA1586,2SA1603,2SA1622,2SB1218A,

型号 功能描述 生产厂家 企业 LOGO 操作
2SA1611

Plastic-Encapsulated Transistors

SOT-323 Plastic-Encapsulated Transistors FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

TEL

2SA1611

PNP Silicon Epitaxia

■ Features ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

KEXIN

科信电子

2SA1611

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES High DC Current Gain High Voltage Complementary to 2SC4177

HTSEMI

金誉半导体

2SA1611

PNP Silicon Plastic Encapsulated Transistor

-0.1A , -60V PNP Silicon Plastic Encapsulated Transistor FEATURES High DC Current Gain High Voltage Complementary to 2SC4177

SECOS

喜可士

2SA1611

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

JIANGSU

长电科技

2SA1611

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

WINNERJOIN

永而佳

2SA1611

丝印代码:M4;PNP Silicon Epitaxial Planar Transistor

FEATURES ● High voltage VCEO=-50V. ● Excellent HFE Linearity. ● High DC current gain : hFE=200 typ. ● Complementary to 2SC4177. APPLICATIONS ● Audio frequency general purpose amplifier applications.

BILIN

银河微电

2SA1611

SOT-323 Plastic-Encapsulate Transistors

FEATURES High DC Current Gain High Voltage Complementary to 2SC4177

DGNJDZ

南晶电子

2SA1611

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complementary to 2SC4177 ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, Ic = -1.0 mA) ● High Voltage: VCEO = -50 VCE

NEC

瑞萨

2SA1611

PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SA1611

SILICON TRANSISTOR

AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

RENESAS

瑞萨

2SA1611

Small Signal Bipolar Transistors

Support is limited to customers who have already adopted these products.

RENESAS

瑞萨

2SA1611

晶体管

JSCJ

长晶科技

2SA1611

丝印代码:M4;PNP Silicon Epitaxial Planar Transistor

文件:159.36 Kbytes Page:4 Pages

BILIN

银河微电

丝印代码:M4;PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:M5;PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:M6;PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:M7;PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor FEATURES High voltage VCEO=-50V. Excellent HFELinearity. High DC current gain : hFE=200 typ. Complementary to 2SC4177. APPLICATIONS Audio frequency general purpose amplifier applications.

BILIN

银河微电

封装/外壳:SC-70,SOT-323 包装:卷带(TR) 描述:TRANS PNP 50V 0.1A SC70 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

RENESAS

瑞萨

PNP Transistors

文件:1.17859 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Silicon Plastic Encapsulated Transistor

文件:109.78 Kbytes Page:1 Pages

SECOS

喜可士

PNP TRANSISTOR

文件:124.09 Kbytes Page:2 Pages

WINNERJOIN

永而佳

PNP Silicon Epitaxial Planar Transistor

文件:159.36 Kbytes Page:4 Pages

BILIN

银河微电

PNP Transistors

文件:1.17859 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.17859 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.17859 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.17859 Mbytes Page:2 Pages

KEXIN

科信电子

Silicon transistor

NEC

瑞萨

2SA1611产品属性

  • 类型

    描述

  • VCEO (V):

    -50

  • IC @25 °C (A):

    -0.1

  • VCE (sat) (V):

    -0.3

  • hFE:

    90-600

  • Pc (W):

    0.15

  • fT (Typical) (GHz):

    0.18

  • Cob (Typical) (pF):

    4.5

更新时间:2026-5-15 9:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
25+
SOT-323
33500
全新进口原装现货,假一罚十
CJ/长电
23+
SOT-323
50000
全新原装正品现货,支持订货
CJ
25+23+
SOT-323
17645
绝对原装正品全新进口深圳现货
CJ/长电
24+
SOT-323
50000
只做原装,欢迎询价,量大价优
TOSHIBA
23+
SOT323
50000
全新原装正品现货,支持订货
RENESAS/瑞萨
22+
SOT-323
20000
只做原装
NEC
23+
SOT-323
315900
原厂授权代理,海外优势订货渠道。可提供大量库存,详
NEC
3KReel
56520
一级代理 原装正品假一罚十价格优势长期供货
RENESAS/瑞萨
2025+
SOT-323
5000
原装进口价格优 请找坤融电子!
NEC
24+
SOT323
5000
原装现货

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