PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Switching Applications (with Bias Resistance) Features • On-chip bias resistance : R1=0, R2=47kΩ. • Small-sized package : SPA. Applications • Switching circuits, inverter circuits, interface circuits, driver circuits.

High-Frequency Amp, Wide-Band Amp Applications

High-Frequency Amplifier, Wide-Band Amplifier Applications Features · High fT. · High breakdown voltage. · Small reverse transfer capacitance and excellent high-frequency characteristic. · Adoption of FBET process.

EPITAXIAL PLANAR SUPER / ULTRA MINI MOLD PNP SILICON TRANSISTORS

Features 1) Low noise : NF = 0.5dB (Typ.) 2) Complementary pair with 2SC2412K/2SC4081.

PNP silicon Transistor

Features ● Low noise:NF=0.5dB(TYP.) ● Epitaxial planar type.

PNP Silicon Epitaxial Planar Transistor

DESCRIPTION The 2SA1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. FEATURES ● Complements of the 2SC4081 ● Excellent hFE Linearity

General Purpose Transistor

Features ● Excellent hFE linearity.

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 200 mW (Tamb=25℃) Collector current ICM : -150 mA Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

PNP General Purpose Transistors

PNP General Purpose Transistors P/b Lead(Pb)-Free

General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

General Purpose Transistor (-50V, -150mA)

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

Silicon PNP transistor in a SOT-323 Plastic Package

Descriptions Silicon PNP transistor in a SOT-323 Plastic Package. Features Low noise, complementary pair with 2SC4081W. Applications General small signal amplifier applications.

General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 200 mW (Tamb=25℃) Collector current ICM : -150 mA Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=200mW) ● Excellent HFE Linearity. ● Complements the 2SC4081. APPLICATIONS ● General purpose application. ● Switching and amplification.

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent hFE linearity ● Complements the 2SC4081

General purpose Transistor (-50V, -150mA)

Features 1)Excellent hFE linearity. 2)Complements the 2SC4081 FRA. Application GENERAL PURPOSE SMALL SIGNALAMPLIFIER

General purpose Transistor (-50V, -150mA)

Features 1)Excellent hFE linearity. 2)Complements the 2SC4081 FRA. Application GENERAL PURPOSE SMALL SIGNALAMPLIFIER

General purpose Transistor (-50V, -150mA)

Features 1)Excellent hFE linearity. 2)Complements the 2SC4081 FRA. Application GENERAL PURPOSE SMALL SIGNALAMPLIFIER

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Amplifier Transistors

General Purpose Amplifier Transistors PNP Surface Mount Features • Moisture Sensitivity Level: 1 • Pb−Free Package is Available

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=200mW) ● Excellent HFE Linearity. ● Complements the 2SC4081. APPLICATIONS ● General purpose application.

PNP Silicon General Purpose Transistor

PNP Silicon General Purpose Transistor Feature Complementsthe 2SC4081F

General Purpose Transistor (-50V, -150mA)

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

PNP Silicon Epitaxial Planar Transistor

FEATURES ● Large Ic. ICMAX=-500mA ● Low VCE(sat). Ideal for low-voltage operation. ● Complements the 2SC4097. APPLICATIONS ● General purpose application.

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Large ICMax.=-500mA ● Low VCE(sat).Ideal for low-voltage operation. ● Complements the 2SC4097.

Medium Power Transistor (-32V, -500mA)

Features 1) Large IC. ICMAX=-500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC4097.

Medium Power Transistor

■ Features ● Large IC. CMax.=-500mA ● Low VCE(sat).Ideal for low-voltage operation. ● Complements the 2SC4097.

PNP Silicon General Purpose Transistor

FEATURES Power dissipation PCM : 200 mW Temp.=25 Collector current ICM : -500 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

Medium Power Transistor (-32V, -05A)

Features 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC4097.

Medium Power Transistor (-32V, -0.5A)

Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor

SOT-323 Plastic-Encapsulate Transistors

FEATURES Large ICMax.=-500mA Low VCE(sat).Ideal for low-voltage operation. Complements the 2SC4097.

Medium Power Transistor (-32V, -05A)

Features 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC4097.

Medium Power Transistor (-32V, -500mA)

Features 1) Large IC. ICMAX=-500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC4097.

PNP Gneral Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Ideally Suited for Automatic Insertion • Untral Small Surface Mount Package • Pb-Free Package are Vailable • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

Medium Power PNP Transistor

VOLTAGE 32 Volts CURRENT 0.5 Ampere FEATURE * Surface mount package. (SC-70/SOT-323) * Low saturation voltage V * Low cob. Cob=7.0pF(Typ.) CE(sat)=-0.4V(max.)(IC=-100mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Medium Power Amplifier.

PNP Gneral Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Ideally Suited for Automatic Insertion • Untral Small Surface Mount Package • Pb-Free Package are Vailable • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

PNP Gneral Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Ideally Suited for Automatic Insertion • Untral Small Surface Mount Package • Pb-Free Package are Vailable • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

Medium Power Transistor

Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor

PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=200mW) ● Excellent HFE Linearity. APPLICATIONS ● General purpose application.

Silicon PNP transistor in a SOT-323 Plastic Package

Descriptions Silicon PNP transistor in a SOT-323 Plastic Package. Features Large Ic low Vce(sat),complementary pair with the 2SC1741W. Applications Medium power amplifier applications.

PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=200mW) ● Excellent HFE Linearity. APPLICATIONS ● General purpose application.

TRANSISTOR(PNP)

FEATURES ● High breakdown voltage. (BVCEO = -120V) ● Complements the 2SC4102

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High breakdown voltage. (BVCEO = -120V) ● Complements the 2SC4102

High-voltage Amplifier Transistor (-120V, -50mA)

Features 1) High breakdown voltage. (BVCEO = −120V) 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S.

PNP Silicon Plastic Encapsulated Transistor

FEATURES • High Breakdown Voltage. (BVCEO = -120V) • Complementary of the 2SC4102

High-Voltage Amplifier Transistor

■ Features ● High breakdown voltage. (BVCEO = -120V) ● Complements the 2SC4102.

SOT-323 Plastic-Encapsulate Transistors

FEATURES High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102

High-voltage Amplifier Transistor (-120V, -50mA)

Features 1)High breakdown voltage. (BVCEO=-120V) 2)Complements the 2SC4102 FRA. Application HIGH VOLTAGE AMPLIFIER

High-voltage Amplifier Transistor (-120V, -50mA)

Features 1) High breakdown voltage. (BVCEO=-120V) 2) Complements the 2SC4102U3 HZG Application HIGH VOLTAGE AMPLIFIER

PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=200mW) ● Excellent HFE Linearity. APPLICATIONS ● General purpose application.

Wide-Band Amplifier Applications

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