2SA157晶体管资料

  • 2SA157别名:2SA157三极管、2SA157晶体管、2SA157晶体三极管

  • 2SA157生产厂家:日本日电公司

  • 2SA157制作材料:Ge-PNP

  • 2SA157性质:调幅 (AM)_振荡级 (O)

  • 2SA157封装形式:直插封装

  • 2SA157极限工作电压:15V

  • 2SA157最大电流允许值:0.004A

  • 2SA157最大工作频率:65MHZ

  • 2SA157引脚数:3

  • 2SA157最大耗散功率

  • 2SA157放大倍数

  • 2SA157图片代号:C-47

  • 2SA157vtest:15

  • 2SA157htest:65000000

  • 2SA157atest:0.004

  • 2SA157wtest:0

  • 2SA157代换 2SA157用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG54C,

2SA157价格

参考价格:¥0.1905

型号:2SA1576AT106Q 品牌:Rohm 备注:这里有2SA157多少钱,2025年最近7天走势,今日出价,今日竞价,2SA157批发/采购报价,2SA157行情走势销售排行榜,2SA157报价。
型号 功能描述 生产厂家&企业 LOGO 操作

PNP/NPNEPITAXIALPLANARSILICONTRANSISTORS

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistance:R1=0,R2=47kΩ. •Small-sizedpackage:SPA. Applications •Switchingcircuits,invertercircuits,interfacecircuits,drivercircuits.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-FrequencyAmp,Wide-BandAmpApplications

High-FrequencyAmplifier,Wide-BandAmplifierApplications Features ·HighfT. ·Highbreakdownvoltage. ·Smallreversetransfercapacitanceandexcellenthigh-frequencycharacteristic. ·AdoptionofFBETprocess.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

PNPsiliconTransistor

Features ●Lownoise:NF=0.5dB(TYP.) ●Epitaxialplanartype.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

EPITAXIALPLANARSUPER/ULTRAMINIMOLDPNPSILICONTRANSISTORS

Features 1)Lownoise:NF=0.5dB(Typ.) 2)Complementarypairwith2SC2412K/2SC4081.

ROHMRohm

罗姆罗姆半导体集团

ROHM

PNPGeneralPurposeTransistors

PNPGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON

GeneralPurposeTransistor(??0V,??.15A)

Features 1)GeneralPurpose. 2)ComplementaryNPNTypes:2SC5658(VMT3)/2SC4617EB(EMT3F)/2SC4617(EMT3)/2SC4081UB(UMT3F)/2SC4081(UMT3)/2SC2412(SMT3) 3)Complextransistors:EMT1/EMT2/EMT3(EMT6)/UMT1N/UMT2N(UMT6)/IMT1A/IMT2A/IMT3A(SMT6) 4)LeadFree/RoHSCompli

ROHMRohm

罗姆罗姆半导体集团

ROHM

GeneralPurposeTransistor(??0V,??.15A)

Features 1)GeneralPurpose. 2)ComplementaryNPNTypes:2SC5658(VMT3)/2SC4617EB(EMT3F)/2SC4617(EMT3)/2SC4081UB(UMT3F)/2SC4081(UMT3)/2SC2412(SMT3) 3)Complextransistors:EMT1/EMT2/EMT3(EMT6)/UMT1N/UMT2N(UMT6)/IMT1A/IMT2A/IMT3A(SMT6) 4)LeadFree/RoHSCompli

ROHMRohm

罗姆罗姆半导体集团

ROHM

GeneralPurposeTransistor(??0V,??.15A)

Features 1)GeneralPurpose. 2)ComplementaryNPNTypes:2SC5658(VMT3)/2SC4617EB(EMT3F)/2SC4617(EMT3)/2SC4081UB(UMT3F)/2SC4081(UMT3)/2SC2412(SMT3) 3)Complextransistors:EMT1/EMT2/EMT3(EMT6)/UMT1N/UMT2N(UMT6)/IMT1A/IMT2A/IMT3A(SMT6) 4)LeadFree/RoHSCompli

ROHMRohm

罗姆罗姆半导体集团

ROHM

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:-150mA Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●Powerdissipation.(PC=200mW) ●ExcellentHFELinearity. ●Complementsthe2SC4081. APPLICATIONS ●Generalpurposeapplication. ●Switchingandamplification.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●ExcellenthFElinearity ●Complementsthe2SC4081

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

GeneralPurposeTransistor(-50V,-150mA)

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM

SiliconPNPtransistorinaSOT-323PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-323PlasticPackage. Features Lownoise,complementarypairwith2SC4081W. Applications Generalsmallsignalamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

PNPSiliconEpitaxialPlanarTransistor

DESCRIPTION The2SA1576AisdesignedforuseindriverstageofAFamplifierandgeneralpurposeamplificaion. FEATURES ●Complementsofthe2SC4081 ●ExcellenthFELinearity

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:-150mA Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

GeneralPurposeTransistor

Features ●ExcellenthFElinearity.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM

GeneralPurposeAmplifierTransistors

GeneralPurposeAmplifierTransistors PNPSurfaceMount Features •MoistureSensitivityLevel:1 •Pb−FreePackageisAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM

GeneralPurposeTransistor(??0V,??.15A)

Features 1)GeneralPurpose. 2)ComplementaryNPNTypes:2SC5658(VMT3)/2SC4617EB(EMT3F)/2SC4617(EMT3)/2SC4081UB(UMT3F)/2SC4081(UMT3)/2SC2412(SMT3) 3)Complextransistors:EMT1/EMT2/EMT3(EMT6)/UMT1N/UMT2N(UMT6)/IMT1A/IMT2A/IMT3A(SMT6) 4)LeadFree/RoHSCompli

ROHMRohm

罗姆罗姆半导体集团

ROHM

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●Powerdissipation.(PC=200mW) ●ExcellentHFELinearity. ●Complementsthe2SC4081. APPLICATIONS ●Generalpurposeapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

PNPSiliconGeneralPurposeTransistor

PNPSiliconGeneralPurposeTransistor Feature Complementsthe2SC4081F

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

GeneralPurposeTransistor(-50V,-150mA)

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●LargeIc.ICMAX=-500mA ●LowVCE(sat).Idealforlow-voltageoperation. ●Complementsthe2SC4097. APPLICATIONS ●Generalpurposeapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●LargeICMax.=-500mA ●LowVCE(sat).Idealforlow-voltageoperation. ●Complementsthe2SC4097.

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

MediumPowerTransistor(-32V,-500mA)

Features 1)LargeIC. ICMAX=-500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC4097.

ROHMRohm

罗姆罗姆半导体集团

ROHM

MediumPowerTransistor(-32V,-0.5A)

Features 1)LargeIC. ICMax.=500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC2411K/2SC1741S/2SC4097. Structure EpitaxialplanartypePNPsilicontransistor

ROHMRohm

罗姆罗姆半导体集团

ROHM

MediumPowerTransistor

■Features ●LargeIC.CMax.=-500mA ●LowVCE(sat).Idealforlow-voltageoperation. ●Complementsthe2SC4097.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPSiliconGeneralPurposeTransistor

FEATURES Powerdissipation PCM:200mWTemp.=25 Collectorcurrent ICM:-500mA Collector-basevoltage V(BR)CBO:-40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55to+150

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

MediumPowerTransistor(-32V,-05A)

Features 1)LargeIC. ICMAX.=-500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC4097.

ROHMRohm

罗姆罗姆半导体集团

ROHM

SOT-323Plastic-EncapsulateTransistors

FEATURES LargeICMax.=-500mA LowVCE(sat).Idealforlow-voltageoperation. Complementsthe2SC4097.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

MediumPowerTransistor(-32V,-05A)

Features 1)LargeIC. ICMAX.=-500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC4097.

ROHMRohm

罗姆罗姆半导体集团

ROHM

MediumPowerTransistor(-32V,-500mA)

Features 1)LargeIC. ICMAX=-500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC4097.

ROHMRohm

罗姆罗姆半导体集团

ROHM

PNPGneralPurposeTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •IdeallySuitedforAutomaticInsertion •UntralSmallSurfaceMountPackage •Pb-FreePackageareVailable •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

MediumPowerPNPTransistor

VOLTAGE32VoltsCURRENT0.5Ampere FEATURE *Surfacemountpackage.(SC-70/SOT-323) *LowsaturationvoltageV *Lowcob.Cob=7.0pF(Typ.)CE(sat)=-0.4V(max.)(IC=-100mA) *PC=200mW(mountedonceramicsubstrate). *Highsaturationcurrentcapability. APPLICATION *MediumPowerAmplifier.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

CHENMKO

PNPGneralPurposeTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •IdeallySuitedforAutomaticInsertion •UntralSmallSurfaceMountPackage •Pb-FreePackageareVailable •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPGneralPurposeTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •IdeallySuitedforAutomaticInsertion •UntralSmallSurfaceMountPackage •Pb-FreePackageareVailable •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

MediumPowerTransistor

Features 1)LargeIC. ICMax.=500mA 2)LowVCE(sat).Idealforlow-voltageoperation. 3)Complementsthe2SC2411K/2SC1741S/2SC4097. Structure EpitaxialplanartypePNPsilicontransistor

ROHMRohm

罗姆罗姆半导体集团

ROHM

SiliconPNPtransistorinaSOT-323PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-323PlasticPackage. Features LargeIclowVce(sat),complementarypairwiththe2SC1741W. Applications Mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●Powerdissipation.(PC=200mW) ●ExcellentHFELinearity. APPLICATIONS ●Generalpurposeapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

High-voltageAmplifierTransistor(-120V,-50mA)

Features 1)Highbreakdownvoltage.(BVCEO=−120V) 2)Complementsthe2SC4102/2SC3906K/2SC2389S.

ROHMRohm

罗姆罗姆半导体集团

ROHM

PNPSiliconPlasticEncapsulatedTransistor

FEATURES •HighBreakdownVoltage.(BVCEO=-120V) •Complementaryofthe2SC4102

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

TRANSISTOR(PNP)

FEATURES ●Highbreakdownvoltage.(BVCEO=-120V) ●Complementsthe2SC4102

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

High-VoltageAmplifierTransistor

■Features ●Highbreakdownvoltage.(BVCEO=-120V) ●Complementsthe2SC4102.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Highbreakdownvoltage.(BVCEO=-120V) ●Complementsthe2SC4102

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●Powerdissipation.(PC=200mW) ●ExcellentHFELinearity. APPLICATIONS ●Generalpurposeapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

SOT-323Plastic-EncapsulateTransistors

FEATURES Highbreakdownvoltage.(BVCEO=-120V) Complementsthe2SC4102

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

High-voltageAmplifierTransistor(-120V,-50mA)

Features 1)Highbreakdownvoltage.(BVCEO=-120V) 2)Complementsthe2SC4102FRA. Application HIGHVOLTAGEAMPLIFIER

ROHMRohm

罗姆罗姆半导体集团

ROHM

High-voltageAmplifierTransistor(-120V,-50mA)

Features 1)Highbreakdownvoltage.(BVCEO=-120V) 2)Complementsthe2SC4102U3HZG Application HIGHVOLTAGEAMPLIFIER

ROHMRohm

罗姆罗姆半导体集团

ROHM

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●Powerdissipation.(PC=200mW) ●ExcellentHFELinearity. APPLICATIONS ●Generalpurposeapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

Wide-BandAmplifierApplications

文件:53.34 Kbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:354.41 Kbytes Page:1 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:354.41 Kbytes Page:1 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:362.99 Kbytes Page:1 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

2SA157产品属性

  • 类型

    描述

  • 型号

    2SA157

  • 制造商

    SANYO

  • 功能描述

    omo 200V 0.1A 60 to 120 PCP Tape & Reel

  • 制造商

    SANYO Semiconductor Co Ltd

  • 功能描述

    TRANS PNP HI F 200V 0.1A SOT89

  • 制造商

    Sanyo

  • 功能描述

    0

更新时间:2025-6-1 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
2016+
SOT323
9000
只做原装,假一罚十,公司可开17%增值税发票!
ROHM
23+
SOT323
11092
ROHM
24+
SC70-3
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ROHM
23+
SOT323
1600
原装现货假一赔十
ROHM
2024
SOT-323SC-70UMT3
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
Rohm(罗姆)
24+
SOT-323(SC-70)
17048
原厂可订货,技术支持,直接渠道。可签保供合同
ROHM
25+23+
SOT-323
29743
绝对原装正品全新进口深圳现货
ROHM/罗姆
24+
SOT523
3000
只做原厂渠道 可追溯货源
ROHM
24+
SOT-323
7850
新进库存/原装
ROHM
02+
83
全新原装!优势库存热卖中!

2SA157芯片相关品牌

  • ADAM-TECH
  • ECS
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  • SEI
  • TAI-SAW
  • ZFSWITCHES

2SA157数据表相关新闻