PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=200mW) ● Excellent HFE Linearity. APPLICATIONS ● General purpose application.

Silicon PNP transistor in a SOT-323 Plastic Package

Descriptions Silicon PNP transistor in a SOT-323 Plastic Package. Features Large Ic low Vce(sat),complementary pair with the 2SC1741W. Applications Medium power amplifier applications.

Medium Power Transistor (-32V, -0.5A)

Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor

Medium Power Transistor

■ Features ● Large IC. CMax.=-500mA ● Low VCE(sat).Ideal for low-voltage operation. ● Complements the 2SC4097.

PNP Silicon General Purpose Transistor

FEATURES Power dissipation PCM : 200 mW Temp.=25 Collector current ICM : -500 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

Medium Power Transistor (-32V, -05A)

Features 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC4097.

PNP Silicon Epitaxial Planar Transistor

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