丝印代码：R；High-voltage Amplifier Transistor (-120V, -50mA)

Features 1)High breakdown voltage. (BVCEO=-120V) 2)Complements the 2SC4102 FRA. Application HIGH VOLTAGE AMPLIFIER

General Purpose Amplification Transistor (支持 AEC-Q101)

为支持现有客户而生产的产品。不对新设计出售此产品。 •一般増幅用表面安装型三极管;

丝印代码：RR；High-voltage Amplifier Transistor (-120V, -50mA)

Features 1) High breakdown voltage. (BVCEO = −120V) 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S.

High-Voltage Amplifier Transistor

■ Features ● High breakdown voltage. (BVCEO = -120V) ● Complements the 2SC4102.

PNP Silicon Plastic Encapsulated Transistor

FEATURES • High Breakdown Voltage. (BVCEO = -120V) • Complementary of the 2SC4102

TRANSISTOR(PNP)

FEATURES ● High breakdown voltage. (BVCEO = -120V) ● Complements the 2SC4102

PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=200mW) ● Excellent HFE Linearity. APPLICATIONS ● General purpose application.