Medium Power PNP Transistor

VOLTAGE 32 Volts CURRENT 0.5 Ampere FEATURE * Surface mount package. (SC-70/SOT-323) * Low saturation voltage V * Low cob. Cob=7.0pF(Typ.) CE(sat)=-0.4V(max.)(IC=-100mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Medium Power Amplifier.

SURFACE MOUNT Medium Power PNP Transistor

VOLTAGE 32 Volts CURRENT 0.5 AmpereFEATURE\n* Surface mount package. (SC-70/SOT-323)\n* Low saturation voltage V\n* Low cob. Cob=7.0pF(Typ.) CE(sat)=-0.4V(max.)(IC=-100mA)\n* PC= 200mW (mounted on ceramic substrate).\n* High saturation current capability.APPLICATION\n* Medium Power Amplifier.CONSTRU

丝印代码：HP；Medium Power Transistor (-32V, -0.5A)

Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor

丝印代码：HQ；Medium Power Transistor

■ Features ● Large IC. CMax.=-500mA ● Low VCE(sat).Ideal for low-voltage operation. ● Complements the 2SC4097.

PNP Silicon General Purpose Transistor

FEATURES Power dissipation PCM : 200 mW Temp.=25 Collector current ICM : -500 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

丝印代码：HP；Medium Power Transistor (-32V, -05A)

Features 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC4097.

PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=200mW) ● Excellent HFE Linearity. APPLICATIONS ● General purpose application.