Ultrahigh-Definition CRT Display, Video Output Applications???

Ultrahigh-Definition CRT Display, Video Output Applications Features • High breakdown voltage : VCEO≥200V. • Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. • Adoption of FBET process

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

PNP Epitaxial Silicon Transistor

Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi

PNP Epitaxial Silicon Transistor

Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi

High-Definition CRT Display, Video Output

High-Definition CRT Display, Video Output Applications Features • High breakdown voltage : VCEO≥300V. • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. • Adoption of MBIT process.

PNP Epitaxial Silicon Transistor

Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi

PNP Epitaxial Silicon Transistor

Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi

PNP Epitaxial Silicon Transistor

Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi

PNP Epitaxial Silicon Transistor

Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi

TRANSISTOR (POWER AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS

Power Amplifier Applications High-Speed Switching Applications • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 μs (typ.)

PNP/NPN SILICON EPITAXIAL TRANSISTOR

PNP/NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC3514 ·High transition frequency APPLICATIONS ·Designed for use in audio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC3514 ·High transition frequency APPLICATIONS ·Designed for use in audio frequency power amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SC3514 ·High transition frequency APPLICATIONS ·Designed for use in audio frequency power amplifier applications

High Voltage Control Applications

Features • High Voltage: VCBO = -300V , VCEO = -300V • Low Saturation Voltage: VCE(sat) = -0.5V (max) • Small Collector Output Capacitance: Cob = 6pF • PC = 1 to 2W (mounted on ceramic substrate) • Small Flat Package • Complementary to 2SC3515

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TYBE DRIVER , CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 6 pF (typ.)

PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z ​​​​​​​

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -0.3V(Max) @IC= -2A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z ​​​​​​​

PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z ​​​​​​​

isc Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min) • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio frequency power ampli

Silicon PNP Epitaxia

Features • Low VCE(sat):VCE(sat)=-0.18 V TYP.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SC3519/3519A APPLICATIONS • Audio and general purpose

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SC3519/3519A APPLICATIONS • Audio and general purpose

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage V(BR)CEO = -160V(Min)-2SA1386 = -180V(Min)-2SA1386A • Good Linearity of hFE • Complement to Type 2SC3519/A APPLICATIONS • Designed for audio and general purpose applications

POWER TRANSISTORS(15A,130W)

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application : Audio and General Purpose

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application : Audio and General Purpose

POWER TRANSISTORS(15A,130W)

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SC3519/3519A APPLICATIONS • Audio and general purpose

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage V(BR)CEO = -160V(Min)-2SA1386 = -180V(Min)-2SA1386A • Good Linearity of hFE • Complement to Type 2SC3519/A APPLICATIONS • Designed for audio and general purpose applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SC3519/3519A APPLICATIONS • Audio and general purpose

Silicon PNP Epitaxial Planar Transistor

FEATURES • Recommend for 105W high Fiderity audio frequency amplifier output stage • Complement to type 2SC3519B & 2SC3519B-A APPLICATIONS • Audio and general purpose

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching time • High DC current gain APPLICATIONS • High current switching applications

Silicon PNP Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 150(Min.)@lc=-1A • High Switching Speed • Low Collector Saturation Voltagetf -0.4V(Max)@ lc= -3A APPLICATIONS • Designed for high current switching applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching time • High DC current gain APPLICATIONS • High current switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching time • High DC current gain APPLICATIONS • High current switching applications

2SA1388

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Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540 APPLICATIONS ·High current switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540 APPLICATIONS ·High current switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540 APPLICATIONS ·High current switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters

Silicon PNP transistor in a TO-126F Plastic Package

文件：1.19387 Mbytes Page：6 Pages

isc Silicon PNP Power Transistor

文件：305.63 Kbytes Page：2 Pages

PNP Epitaxial Silicon Transistor

isc Silicon PNP Power Transistor

文件：305.63 Kbytes Page：2 Pages

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP 300V 0.1A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP 300V 0.1A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Power Amplifier Applications High-Speed Switching Applications

文件：176.4 Kbytes Page：5 Pages

Power Amplifier Applications High-Speed Switching Applications

文件：176.4 Kbytes Page：5 Pages

Silicon PNP Power Transistors

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Transistor-Bipolar Small Signal Transistors

Silicon PNP Power Transistors

文件：161.41 Kbytes Page：3 Pages

Power transistor for high-speed switching applications

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

文件：203.24 Kbytes Page：6 Pages

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

文件：203.24 Kbytes Page：6 Pages