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2SA138晶体管资料
2SA138别名：2SA138三极管、2SA138晶体管、2SA138晶体三极管
2SA138生产厂家：日本富士通公司
2SA138制作材料：Ge-PNP
2SA138性质：开关管 （S）
2SA138封装形式：直插封装
2SA138极限工作电压：20V
2SA138最大电流允许值：0.025A
2SA138最大工作频率：15MHZ
2SA138引脚数：3
2SA138最大耗散功率：0.08W
2SA138放大倍数：
2SA138图片代号：C-47
2SA138vtest：20
2SA138htest：15000000
- 2SA138atest：0.025
2SA138wtest：0.08
2SA138代换 2SA138用什么型号代替：ASY26,ASY27,ASY48,2N1307,3AG54A,
2SA138价格
参考价格：￥12.7848
型号：2SA1386 品牌：Sanken 备注：这里有2SA138多少钱，2025年最近7天走势，今日出价，今日竞价，2SA138批发/采购报价，2SA138行情走势销售排行榜，2SA138报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Ultrahigh-Definition CRT Display, Video Output Applications??? Ultrahigh-Definition CRT Display, Video Output Applications Features • High breakdown voltage : VCEO≥200V. • Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. • Adoption of FBET process | SANYO 三洋 |   | ||
Transistors for TV Display Video Output Use Transistors for TV Display Video Output Use | SANYO 三洋 | | ||
Transistors for TV Display Video Output Use Transistors for TV Display Video Output Use | SANYO 三洋 | | ||
PNP Epitaxial Silicon Transistor Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi | Fairchild 仙童半导体 | | ||
PNP Epitaxial Silicon Transistor Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi | Fairchild 仙童半导体 | | ||
High-Definition CRT Display, Video Output High-Definition CRT Display, Video Output Applications Features • High breakdown voltage : VCEO≥300V. • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. • Adoption of MBIT process. | SANYO 三洋 | | ||
PNP Epitaxial Silicon Transistor Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi | Fairchild 仙童半导体 | | ||
PNP Epitaxial Silicon Transistor Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi | Fairchild 仙童半导体 | | ||
PNP Epitaxial Silicon Transistor Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi | Fairchild 仙童半导体 | | ||
PNP Epitaxial Silicon Transistor Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi | Fairchild 仙童半导体 | | ||
TRANSISTOR (POWER AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS Power Amplifier Applications High-Speed Switching Applications • High DC current gain: hFE = 150 to 400 (IC = −0.5 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 μs (typ.) | TOSHIBA 东芝 | | ||
PNP/NPN SILICON EPITAXIAL TRANSISTOR PNP/NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC3514 ·High transition frequency APPLICATIONS ·Designed for use in audio frequency power amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC3514 ·High transition frequency APPLICATIONS ·Designed for use in audio frequency power amplifier applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC3514 ·High transition frequency APPLICATIONS ·Designed for use in audio frequency power amplifier applications | SAVANTIC | | ||
High Voltage Control Applications Features • High Voltage: VCBO = -300V , VCEO = -300V • Low Saturation Voltage: VCE(sat) = -0.5V (max) • Small Collector Output Capacitance: Cob = 6pF • PC = 1 to 2W (mounted on ceramic substrate) • Small Flat Package • Complementary to 2SC3515 | KEXIN 科信电子 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TYBE DRIVER , CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 6 pF (typ.) | TOSHIBA 东芝 | | ||
PNP SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z | NEC 瑞萨 | | ||
Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -0.3V(Max) @IC= -2A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers | ISC 无锡固电 | | ||
PNP SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
PNP SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z | NEC 瑞萨 | | ||
isc Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min) • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio frequency power ampli | ISC 无锡固电 | | ||
Silicon PNP Epitaxia Features • Low VCE(sat):VCE(sat)=-0.18 V TYP. | KEXIN 科信电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SC3519/3519A APPLICATIONS • Audio and general purpose | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SC3519/3519A APPLICATIONS • Audio and general purpose | JMNIC 锦美电子 | | ||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage V(BR)CEO = -160V(Min)-2SA1386 = -180V(Min)-2SA1386A • Good Linearity of hFE • Complement to Type 2SC3519/A APPLICATIONS • Designed for audio and general purpose applications | ISC 无锡固电 | | ||
POWER TRANSISTORS(15A,130W)
| MOSPEC 统懋 | | ||
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application : Audio and General Purpose | Sanken 三垦 | | ||
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application : Audio and General Purpose | Sanken 三垦 | | ||
POWER TRANSISTORS(15A,130W)
| MOSPEC 统懋 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SC3519/3519A APPLICATIONS • Audio and general purpose | JMNIC 锦美电子 | | ||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage V(BR)CEO = -160V(Min)-2SA1386 = -180V(Min)-2SA1386A • Good Linearity of hFE • Complement to Type 2SC3519/A APPLICATIONS • Designed for audio and general purpose applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SC3519/3519A APPLICATIONS • Audio and general purpose | SAVANTIC | | ||
Silicon PNP Epitaxial Planar Transistor FEATURES • Recommend for 105W high Fiderity audio frequency amplifier output stage • Complement to type 2SC3519B & 2SC3519B-A APPLICATIONS • Audio and general purpose | NELLSEMI 尼尔半导体 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching time • High DC current gain APPLICATIONS • High current switching applications | SAVANTIC | | ||
Silicon PNP Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 150(Min.)@lc=-1A • High Switching Speed • Low Collector Saturation Voltagetf -0.4V(Max)@ lc= -3A APPLICATIONS • Designed for high current switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching time • High DC current gain APPLICATIONS • High current switching applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • High speed switching time • High DC current gain APPLICATIONS • High current switching applications | ISC 无锡固电 | | ||
2SA1388 Coming Soon. If you have some information on related parts, please share useful information by adding links below. | TOSHIBA 东芝 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540 APPLICATIONS ·High current switching applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540 APPLICATIONS ·High current switching applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540 APPLICATIONS ·High current switching applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters | ISC 无锡固电 | | ||
Silicon PNP transistor in a TO-126F Plastic Package 文件：1.19387 Mbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
isc Silicon PNP Power Transistor 文件：305.63 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
PNP Epitaxial Silicon Transistor | ONSEMI 安森美半导体 | | ||
isc Silicon PNP Power Transistor 文件：305.63 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP 300V 0.1A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP 300V 0.1A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Power Amplifier Applications High-Speed Switching Applications 文件：176.4 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
Power Amplifier Applications High-Speed Switching Applications 文件：176.4 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
Silicon PNP Power Transistors 文件：161.41 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Transistor-Bipolar Small Signal Transistors | RENESAS 瑞萨 | | ||
Silicon PNP Power Transistors 文件：161.41 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Power transistor for high-speed switching applications | TOSHIBA 东芝 | | ||
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications 文件：203.24 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications 文件：203.24 Kbytes Page：6 Pages | TOSHIBA 东芝 | |
2SA138产品属性
- 类型
描述
- 型号
2SA138
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2023+ |
TO-252 |
58000 |
进口原装,现货热卖 |
|||
NEC |
23+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
NEC |
24+ |
NA/ |
4750 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
NEC |
20+ |
TO252 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
11+ |
TO252 |
1020 |
原装现货 |
|||
NEC |
22+ |
SOT252 |
12245 |
现货,原厂原装假一罚十! |
|||
NEC |
24+ |
TO-252 |
9600 |
原装现货,优势供应,支持实单! |
|||
RENESAS |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
25+ |
SOT-3 |
2700 |
全新原装自家现货优势 |
2SA138芯片相关品牌
2SA138规格书下载地址
2SA138参数引脚图相关
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- 2SA1381
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- 2SA1376(A)
- 2SA1376
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- 2SA1361
- 2SA1360
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- 2SA1358
- 2SA1357
- 2SA1356
- 2SA1355
- 2SA1353
- 2SA1352
2SA138数据表相关新闻
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