Silicon PNP Epitaxia

Features • Low VCE(sat):VCE(sat)=-0.18 V TYP.

PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z ​​​​​​​

isc Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min) • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio frequency power ampli

SILICON POWER TRANSISTOR

文件：796.51 Kbytes Page：6 Pages

PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z ​​​​​​​

PNP SILICON EPITAXIAL TRANSISTOR

文件：796.51 Kbytes Page：6 Pages

PNP Transistors

文件：1.59822 Mbytes Page：3 Pages

PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z ​​​​​​​