PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z ​​​​​​​

PNP SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SA1385-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.18 V TYP. • Complement to 2SC3518-Z ​​​​​​​

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -0.3V(Max) @IC= -2A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

isc Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min) • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio frequency power ampli

SILICON POWER TRANSISTOR

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