PNP Epitaxial Silicon Transistor

Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS PNP 300V 0.1A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Epitaxial Silicon Transistor

Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi

High-Definition CRT Display, Video Output

High-Definition CRT Display, Video Output Applications Features • High breakdown voltage : VCEO≥300V. • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. • Adoption of MBIT process.

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

PNP Epitaxial Silicon Transistor

Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi

isc Silicon PNP Power Transistor

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