2SA1163晶体三极管说明书PDF资料现货行情报价-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第8788页 > 2SA116

2SA116晶体管资料

2SA116别名：2SA116三极管、2SA116晶体管、2SA116晶体三极管
2SA116生产厂家：日本富士通公司
2SA116制作材料：Ge-PNP
2SA116性质：调幅（AM）_调频（FM）_前置放大（V）
2SA116封装形式：直插封装
2SA116极限工作电压：30V
2SA116最大电流允许值：0.01A
2SA116最大工作频率：120MHZ
2SA116引脚数：3
2SA116最大耗散功率：
2SA116放大倍数：
2SA116图片代号：D-58
2SA116vtest：30
2SA116htest：120000000
2SA116atest：0.01
2SA116wtest：0

2SA116代换 2SA116用什么型号代替：AF124,AF125,AF200,2N3323,2N3324,2N3325,2SA340,2SA341,2SA342,3AG53D,

2SA116价格

参考价格：￥0.1819

型号：2SA1162-GR,LF 品牌：Toshiba 备注：这里有2SA116多少钱，2025年最近7天走势，今日出价，今日竞价，2SA116批发/采购报价，2SA116行情走势销售排行榜，2SA116报价。

型号	功能描述	生产厂家企业	LOGO
2SA1160	Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL	TEL
2SA1160	TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage : VCE (sat) = −0.5 V (max) (IC = −2	TOSHIBA 东芝	TOSHIBA
2SA1160	TO-92L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High DC Current Gain and Excellent hFE Linearity ● Low Saturation Voltage	JIANGSU 长电科技	JIANGSU
2SA1160	Silicon PNP transistor in a TO-92LM Plastic Package Descriptions Silicon PNP transistor in a TO-92LM Plastic Package Features High DC current gain and excellent hFE linearity, low saturation voltage. Applications Strobe flash, medium power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SA1160	TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SA1161	New Jersey Semi-Conductor Products, New Jersey Semi-Conductor Products	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1162	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO= −50 V, IC= −150 mA (max) • Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (typ.) • High hFE: hFE= 70~400 • Low noise: NF = 1dB (typ.),	TOSHIBA 东芝	TOSHIBA
2SA1162	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low noise ● Complementary to 2SC2712 ● Small Package	JIANGSU 长电科技	JIANGSU
2SA1162	PNP General Purpose Transistor FEATURES PNP General Purpose Transistor	GSME 桂微	GSME
2SA1162	PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER • Complemen to 2SC2712 • Collector-current:Ic=-100mA Collector-Emiller Voltage:VCE=-45V	WINNERJOIN 永而佳	WINNERJOIN
2SA1162	Plastic-Encapsulate Transistors FEATURES Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package.	HOTTECH 合科泰	HOTTECH
2SA1162	Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High voltage and current, excellent hFE linearity, high hFE, low noise, complementary to 2SC2712. Applications Audio frequency general purpose amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SA1162	New Jersey Semi-Conductor Products, New Jersey Semi-Conductor Products	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1162	PNP Transistors ■ Features ● High voltage and high current ● High hFE: hFE = 70~400 ● Low noise: NF = 1dB (typ.), 10dB (max) ● Complementary to 2SC2712	YFWDIODE 佑风微	YFWDIODE
2SA1162	TRANSISTOR(PNP) FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. MARKING: SO , SY , SG	HTSEMI 金誉半导体	HTSEMI
2SA1162	Silicon PNP Epitaxial Type Transistor ■ Features ● High voltage and high current ● High hFE: hFE = 70~400 ● Low noise: NF = 1dB (typ.), 10dB (max) ● Complementary to 2SC2712	KEXIN 科信电子	KEXIN
2SA1162	Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 150 mW (Tamb=25℃) Collector current ICM : 150 mA Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL	TEL
2SA1162	PNP Silicon General Purpose Transistor FEATURES • Low Noise: NF=1 dB(Typ.), 10 dB(Max.) • Complements of the 2SC2712 MECHANICAL DATA • Case: SOT-23, Molded Plastic • Weight: 0.008 grams(approx.)	SECOS 喜可士	SECOS
2SA1162	TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO= −50 V, IC= −150 mA (max) • Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (typ.) • High hFE: hFE= 70~400 • Low noise: NF = 1dB (typ.),	TOSHIBA 东芝	TOSHIBA
2SA1162	Silicon Epitaxial Planar Transistor FEATURES ● Low noise:NF=1dB(Typ),10dB(Max). ● Commplementary to 2SC2712. ● Small package. APPLICATIONS ● General purpose application.	BILIN 银河微电	BILIN
2SA1162	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO= −50 V, IC= −150 mA (max) • Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (typ.) • High hFE: hFE= 70~400 • Low noise: NF = 1dB (typ.),	TOSHIBA 东芝	TOSHIBA
2SA1162	Plastic-Encapsulate Transistors FEATURES . Low noise . Complementary to 2SC2712 . S m a ll Package	GWSEMI 唯圣电子	GWSEMI
2SA1162-G	PNP Transistors ■ Features ● High voltage and high current ● High hFE: hFE = 70~400 ● Low noise: NF = 1dB (typ.), 10dB (max) ● Complementary to 2SC2712	YFWDIODE 佑风微	YFWDIODE
2SA1162-GR	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO= −50 V, IC= −150 mA (max) • Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (typ.) • High hFE: hFE= 70~400 • Low noise: NF = 1dB (typ.),	TOSHIBA 东芝	TOSHIBA
2SA1162GT1	General Purpose Amplifier Transistors •Moisture Sensitivity Level: 1 •ESD Rating: TBD	ONSEMI 安森美半导体	ONSEMI
2SA1162-O	PNP Silicon Plastic-Encapsulate Transistor Features • Capable of 0.15Watts of Power Dissipation. • Collector-current: 0.15A • Collector-base Voltage: -50V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS	MCC	MCC
2SA1162-O	PNP Transistors ■ Features ● High voltage and high current ● High hFE: hFE = 70~400 ● Low noise: NF = 1dB (typ.), 10dB (max) ● Complementary to 2SC2712	YFWDIODE 佑风微	YFWDIODE
2SA1162S-Y-LF	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO= −50 V, IC= −150 mA (max) • Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (typ.) • High hFE: hFE= 70~400 • Low noise: NF = 1dB (typ.),	TOSHIBA 东芝	TOSHIBA
2SA1162-Y	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO= −50 V, IC= −150 mA (max) • Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (typ.) • High hFE: hFE= 70~400 • Low noise: NF = 1dB (typ.),	TOSHIBA 东芝	TOSHIBA
2SA1162-Y	PNP Transistors ■ Features ● High voltage and high current ● High hFE: hFE = 70~400 ● Low noise: NF = 1dB (typ.), 10dB (max) ● Complementary to 2SC2712	YFWDIODE 佑风微	YFWDIODE
2SA1162YT1	General Purpose Amplifier Transistors •Moisture Sensitivity Level: 1 •ESD Rating: TBD	ONSEMI 安森美半导体	ONSEMI
2SA1162-YTE85LF	Audio Frequency General Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO= −50 V, IC= −150 mA (max) • Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (typ.) • High hFE: hFE= 70~400 • Low noise: NF = 1dB (typ.),	TOSHIBA 东芝	TOSHIBA
2SA1163	Audio Frequency General Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2713 • Small package	TOSHIBA 东芝	TOSHIBA
2SA1163	New Jersey Semi-Conductor Products, New Jersey Semi-Conductor Products	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1163	TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPUFIER APPLICATIONS) Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2713 • Small package	TOSHIBA 东芝	TOSHIBA
2SA1163	Silicon PNP Epitaxial Type Features • High voltage. • Small package. • High hFE. • Low noise.	KEXIN 科信电子	KEXIN
2SA1163-GR	Audio Frequency General Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2713 • Small package	TOSHIBA 东芝	TOSHIBA
2SA1166	Silicon PNP Power Transistors DESCRIPTION • With MT-200 package • High power dissipation APPLICATIONS • Audio and general purpose applications	SAVANTIC	SAVANTIC
2SA1166	Silicon PNP Power Transistors DESCRIPTION • With MT-200 package • High power dissipation APPLICATIONS • Audio and general purpose applications	JMNIC 锦美电子	JMNIC
2SA1166	Silicon PNP Power Transistors DESCRIPTION • With MT-200 package • High power dissipation APPLICATIONS • Audio and general purpose applications	ISC 无锡固电	ISC
2SA1166	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage V(BR)CEO=-150V(Min) • Good Linearity of hFE • High Power Dissipation APPLICATIONS • Power amplifier applications • Recommended for 100W high-fidelity audio frequency amplifier output stage	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1169	Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications	ISC 无锡固电	ISC
2SA1169	Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications	JMNIC 锦美电子	JMNIC
2SA1169	Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications	SAVANTIC	SAVANTIC
2SA1160	Strobe Flash Applications Medium Power Amplifier Applications 文件：162.95 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1160	Strobe Flash Applications Medium Power Amplifier Applications 文件：150.17 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1160	双极型三极管	JESTEK 吉思泰	JESTEK
2SA1160	晶体管	JSCJ 长晶科技	JSCJ
2SA1160_07	Strobe Flash Applications Medium Power Amplifier Applications 文件：150.17 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1160_09	Strobe Flash Applications Medium Power Amplifier Applications 文件：162.95 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1161	New Jersey Semi-Conductor Products,	NJS	NJS
2SA1162	PNP Silicon General Purpose Transistor 文件：332.12 Kbytes Page：2 Pages	SECOS 喜可士	SECOS
2SA1162	Audio Frequency General Purpose Amplifier Applications 文件：391.18 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SA1162	Audio Frequency General Purpose Amplifier Applications 文件：104.56 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SA1162	Silicon PNP Epitaxial Type Transistor 文件：410.41 Kbytes Page：4 Pages	BWTECH	BWTECH
2SA1162	Silicon Epitaxial Planar Transistor 文件：195.07 Kbytes Page：3 Pages	BILIN 银河微电	BILIN
2SA1162_03	Audio Frequency General Purpose Amplifier Applications 文件：104.56 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SA1162_07	Audio Frequency General Purpose Amplifier Applications 文件：391.18 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SA1162_08	Silicon Epitaxial Planar Transistor 文件：237.12 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA1162_10	PNP Silicon General Purpose Transistor 文件：332.12 Kbytes Page：2 Pages	SECOS 喜可士	SECOS

2SA116产品属性

类型
描述
型号
2SA116
制造商
TOSHIBA
制造商全称
Toshiba Semiconductor
功能描述
TRANSISTOR(STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

2SA116供应商更多...

更新时间：2025-10-31 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SA1163-GR	TOSHIBA/东芝	24+	NA/	9000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
上海意淼电子科技有限公司	2SA1163-GR	TOSHIBA	23+	SOT23	20000	全新原装假一赔十	询价
深圳市宏捷佳电子科技有限公司	2SA1163	TOSHIBA	2023+	SOT-23	50000	原装现货	询价
中天科工半导体（深圳）有限公司	2SA1163	TOSHIBA/东芝	25+	SOT-23	20300	TOSHIBA/东芝原装特价2SA1163即刻询购立享优惠#长期有货	询价
深圳市科芯源微电子有限公司	2SA1163	TOSHIBA/东芝	23+	SOT-23	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市富利微电子科技有限公司	2SA1163-GR	TOSHIBA/东芝	24+	NA	30000	房间原装现货特价热卖,有单详谈	询价
深圳市亿联芯电子科技有限公司	2SA1163-BL,LF(T	TOSHIBA/东芝	2023+	NA	6895	原厂全新正品旗舰店优势现货	询价
深圳市益百分电子有限公司	2SA1163-GR	TOSH	08PB	SOT23/	2900	全新原装进口自己库存优势	询价
深圳市富芯乐电子科技有限公司	2SA1163GR	原装进口TOSHIBA	24+	SOT-23	6500	只做原装正品现货欢迎来电查询15919825718	询价
深圳市美思瑞电子科技有限公司	2SA1163-BL,LF(T	TOSHIBA/东芝	22+	N/A	12245	现货,原厂原装假一罚十!	询价

2SA116芯片相关品牌

2SA116规格书下载地址

2SA116参数引脚图相关

2SA116数据表相关新闻

2SA1037-R-TP
进口代理
2024-11-1
2SA1037AKT146Q
2SA1037AKT146Q
2023-5-26
2SA1930Q现货销售，欢迎来电咨询~
2SP0115T2C0-12
2022-4-15
2SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-30
2SA2198
2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-24
2SA1036KT146R一级代理进口原装现货尽在-宇集芯电子
2SA1036K T146R 2SA1036KT146R
2019-5-9

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106

您好,欢迎来到114ic资料网！

2SA116晶体管资料

2SA116价格

2SA116产品属性

2SA116供应商更多...

2SA116芯片相关品牌

2SA116规格书下载地址

2SA116参数引脚图相关

2SA116数据表相关新闻

2SA1037-R-TP

2SA1037AKT146Q

2SA1930Q现货销售，欢迎来电咨询~

2SA812-T1B-A/S6 原装正品现货

2SA2198

2SA1036KT146R一级代理进口原装现货尽在-宇集芯电子

DdatasheetPDF页码索引