TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO= −50 V, IC= −150 mA (max) • Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (typ.) • High hFE: hFE= 70~400 • Low noise: NF = 1dB (typ.),

PNP Transistors

■ Features ● High voltage and high current ● High hFE: hFE = 70~400 ● Low noise: NF = 1dB (typ.), 10dB (max) ● Complementary to 2SC2712

PNP Transistors

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PNP Silicon Plastic-Encapsulate Transistor

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Silicon Epitaxial Planar Transistor

FEATURES ● Low noise:NF=1dB(Typ),10dB(Max). ● Commplementary to 2SC2712. ● Small package. APPLICATIONS ● General purpose application.

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 150 mW (Tamb=25℃) Collector current ICM : 150 mA Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Silicon General Purpose Transistor

FEATURES • Low Noise: NF=1 dB(Typ.), 10 dB(Max.) • Complements of the 2SC2712 MECHANICAL DATA • Case: SOT-23, Molded Plastic • Weight: 0.008 grams(approx.)

Audio Frequency General Purpose Amplifier Applications

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Audio Frequency General Purpose Amplifier Applications

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Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO= −50 V, IC= −150 mA (max) • Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (typ.) • High hFE: hFE= 70~400 • Low noise: NF = 1dB (typ.),

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 0.15A SMINI 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 0.15A SMINI 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Transistors

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