TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.),

PNPSiliconPlastic-EncapsulateTransistor

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SiliconEpitaxialPlanarTransistor

FEATURES ●Lownoise:NF=1dB(Typ),10dB(Max). ●Commplementaryto2SC2712. ●Smallpackage. APPLICATIONS ●Generalpurposeapplication.

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:150mW(Tamb=25℃) Collectorcurrent ICM:150mA Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

PNPSiliconGeneralPurposeTransistor

FEATURES •LowNoise:NF=1dB(Typ.),10dB(Max.) •Complementsofthe2SC2712 MECHANICALDATA •Case:SOT-23,MoldedPlastic •Weight:0.008grams(approx.)

AudioFrequencyGeneralPurposeAmplifierApplications

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AudioFrequencyGeneralPurposeAmplifierApplications

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 0.15A SMINI 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 50V 0.15A SMINI 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个