TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier general purpose amplification.

PNP Transistor

Features ● High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ● Low niose: NF=1dB(Typ.) at f=1KHz

PNP SILICON TRANSISTOR

2SA1015 is PNP silicon planar transistor designed for audio frequency general purpose amplifier applications and driver stage amplifier applications.

Audio Frequency Amplifier Applications Low Noise Amplifier Applications

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LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

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PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.4Watts of Power Dissipation. • Collector-current: -0.15A • Collector-base Voltage: -50V • Operating and storage junction temperature range: -55°C to +125°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:A1015 • Lead Free Finish/R

PNP Silicon Plastic-Encapsulate Transistor

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PNP Silicon Plastic-Encapsulate Transistor

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中等功率双极型晶体管

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS PNP 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS PNP 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个