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2SA1015晶体管资料

2SA1015别名：2SA1015三极管、2SA1015晶体管、2SA1015晶体三极管
2SA1015生产厂家：日本东芝公司
2SA1015制作材料：Si-PNP
2SA1015性质：通用型（Uni）
2SA1015封装形式：直插封装
2SA1015极限工作电压：50V
2SA1015最大电流允许值：0.15A
2SA1015最大工作频率：>80MHZ
2SA1015引脚数：3
2SA1015最大耗散功率：0.4W
2SA1015放大倍数：
2SA1015图片代号：A-39
2SA1015vtest：50
2SA1015htest：80000100
2SA1015atest：0.15
2SA1015wtest：0.4

2SA1015代换 2SA1015用什么型号代替：BC177,BC204,BC212,BC213,BC251,BC257,BC307,BC512,BC557,CG1015,CG673,

型号	功能描述	生产厂家企业	LOGO
2SA1015	PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA	TOSHIBA 东芝	TOSHIBA
2SA1015	Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA	TOSHIBA 东芝	TOSHIBA
2SA1015	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA	TOSHIBA 东芝	TOSHIBA
2SA1015	PNP Epitaxial Planar Transistor PNP Epitaxial Planar Transistor	FCI 富加宜	FCI
2SA1015	Silicon Epitaxial Planar Transistor FEATURES ● Complementary To 2SC1815. ● Excellent HFE Linearity. ● High voltage and high current. ● Low noise. ● Collector-Emitter voltage BVCEO=-50V. APPLICATIONS ● Low frequency , low noise amplifier.	BILIN 银河微电	BILIN
2SA1015	isc Silicon PNP Transistor DESCRIPTION • High Voltage and High Current Vceo=-50V(Min.), Ic=-150mA(Max) • Excellent hFE Linearity • Low Noise • Complement to Type 2SC1815 APPLICATIONS • Audio frequency general purpose amplifier Applications • Driver stage amplifier applications.	ISC 无锡固电	ISC
2SA1015	TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Power dissipation	JIANGSU 长电科技	JIANGSU
2SA1015	PNP Transistor Features ● High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ● Low niose: NF=1dB(Typ.) at f=1KHz	KEXIN 科信电子	KEXIN
2SA1015	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification.	DCCOM 道全	DCCOM
2SA1015	PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended.)	SEMTECH_ELEC 先之科半导体	SEMTECH_ELEC
2SA1015	PNP EPITAXIAL PLANAR TRANSISTOR Description The 2SA1015 is designed for use in driver stage of AF amplifier and general purpose amplification.	TGS	TGS
2SA1015	Silicon Epitaxial Planar Transistor FEATURES ● Complementary To 2SC1815. ● Excellent HFE Linearity. ● High voltage and high current. ● Low noise. ● Collector-Emitter voltage BVCEO=-50V. APPLICATIONS ● Low frequency , low noise amplifier.	LUGUANG 鲁光电子	LUGUANG
2SA1015	TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) ● Power dissipation	DGNJDZ 南晶电子	DGNJDZ
2SA1015	TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES ● Power dissipation	KOOCHIN 灏展电子	KOOCHIN
2SA1015	High voltage and high current FEATURES High voltage and high current Excellent hFE Linearity Low niose ,Complementary to C1815	MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司	MAKOSEMI
2SA1015	Silicon PNP transistor in a TO-92 Plastic Package Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815. Applications Audio frequency general purpose, driver stage amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SA1015	PNP SILICON TRANSISTOR 2SA1015 is PNP silicon planar transistor designed for audio frequency general purpose amplifier applications and driver stage amplifier applications.	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2SA1015	PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor C1815 is recommended.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SA1015	PNP Transistors Features ● High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ● Low niose: NF=1dB(Typ.) at f=1KHz	YFWDIODE 佑风微	YFWDIODE
2SA1015	Low Frequency Amplifier PNP Epitaxial Silicon Transistor 文件：923.43 Kbytes Page：7 Pages	FUTUREWAFER FutureWafer Tech Co.,Ltd	FUTUREWAFER
2SA1015	SOT-23 Plastic-Encapsulate Transistors 文件：550.62 Kbytes Page：4 Pages	UMW 友台半导体	UMW
2SA1015	晶体管	hxymos 华轩阳电子	hxymos
2SA1015	小信号晶体管	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
2SA1015	Bipolar Transistor	UTC 友顺	UTC
2SA1015	Silicon Epitaxial Planar Transistor 文件：167.78 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA1015	Audio Frequency Amplifier Applications Low Noise Amplifier Applications 文件：110.69 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SA1015	COLOR TELEVISION N1PS Chassis 文件：2.69679 Mbytes Page：54 Pages	TOSHIBA 东芝	TOSHIBA
2SA1015	COLOR TELEVISION 文件：2.69679 Mbytes Page：54 Pages	TOSHIBA 东芝	TOSHIBA
2SA1015	COLOUR TELEVISION C9PJ Chassis 文件：6.49885 Mbytes Page：126 Pages	TOSHIBA 东芝	TOSHIBA
2SA1015	LOW FREQUENCY PNP AMPLIFIER TRANSISTOR 文件：143.93 Kbytes Page：4 Pages	UTC 友顺	UTC
2SA1015	Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications 文件：176.91 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SA1015	Low Level and General Purpose Amplifiers 文件：84.74 Kbytes Page：1 Pages	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2SA1015GR	PNP SILICON TRANSISTOR 2SA1015 is PNP silicon planar transistor designed for audio frequency general purpose amplifier applications and driver stage amplifier applications.	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2SA1015-GR	PNP Silicon Plastic-Encapsulate Transistor Features • Capable of 0.4Watts of Power Dissipation. • Collector-current: -0.15A • Collector-base Voltage: -50V • Operating and storage junction temperature range: -55°C to +125°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:A1015 • Lead Free Finish/R	MCC	MCC
2SA1015-H	PNP Transistors Features ● High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ● Low niose: NF=1dB(Typ.) at f=1KHz	YFWDIODE 佑风微	YFWDIODE
2SA1015K	Plastic Encapsulate Transistors FEATURES . Power Dissipation PCM: 0.2 W ( Ta = 25 к) . Collector Current ICM: -0.15 A . Collector-Base Voltage V(BR)CBO: -50 V	SECOS 喜可士	SECOS
2SA1015L	TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • High voltage and high current: VCEO= −50 V (min), IC= −150 mA (max) • Excellent hFElinearity: hFE(2) = 80 (typ.) at VCE= −6 V, IC= −150 mA	TOSHIBA 东芝	TOSHIBA
2SA1015-L	PNP Transistors Features ● High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ● Low niose: NF=1dB(Typ.) at f=1KHz	YFWDIODE 佑风微	YFWDIODE
2SA1015L-Y	Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA	TOSHIBA 东芝	TOSHIBA
2SA1015-O	PNP Silicon Plastic-Encapsulate Transistor Features • Capable of 0.4Watts of Power Dissipation. • Collector-current: -0.15A • Collector-base Voltage: -50V • Operating and storage junction temperature range: -55°C to +125°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:A1015 • Lead Free Finish/R	MCC	MCC
2SA1015-Y	PNP Silicon Plastic-Encapsulate Transistor Features • Capable of 0.4Watts of Power Dissipation. • Collector-current: -0.15A • Collector-base Voltage: -50V • Operating and storage junction temperature range: -55°C to +125°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:A1015 • Lead Free Finish/R	MCC	MCC
2SA1015-YTPE2	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA	TOSHIBA 东芝	TOSHIBA
2SA1015_07	Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications 文件：176.91 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SA1015_09	LOW FREQUENCY PNP AMPLIFIER TRANSISTOR 文件：143.93 Kbytes Page：4 Pages	UTC 友顺	UTC
2SA1015_15	PNP Transistors 文件：838.09 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA1015_17	Silicon Epitaxial Planar Transistor 文件：167.78 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA1015-1	PnP Epitaxial Planar Transistor 文件：919.54 Kbytes Page：2 Pages	FCI 富加宜	FCI
2SA1015-GR	PNP Silicon Plastic-Encapsulate Transistor 文件：390.75 Kbytes Page：3 Pages	MCC	MCC
2SA1015-GR	PNP Silicon Plastic-Encapsulate Transistor 文件：633.47 Kbytes Page：3 Pages	MCC	MCC
2SA1015-GR-BP	封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA）包装：散装描述：TRANS PNP 50V 0.15A TO92 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
2SA1015G-X-T92-B	LOW FREQUENCY PNP AMPLIFIER TRANSISTOR 文件：143.93 Kbytes Page：4 Pages	UTC 友顺	UTC
2SA1015G-X-T92-K	LOW FREQUENCY PNP AMPLIFIER TRANSISTOR 文件：143.93 Kbytes Page：4 Pages	UTC 友顺	UTC
2SA1015-H	PNP Transistors 文件：838.09 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA1015-HF_15	PNP Transistors 文件：926.75 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA1015-H-HF	PNP Transistors 文件：926.75 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA1015K_15	Plastic Encapsulate Transistors 文件：257.51 Kbytes Page：2 Pages	SECOS 喜可士	SECOS
2SA1015L	Audio Frequency Amplifier Applications Low Noise Amplifier Applications 文件：110.69 Kbytes Page：3 Pages	TOSHIBA 东芝	TOSHIBA
2SA1015-L	PNP Transistors 文件：838.09 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA1015-L-HF	PNP Transistors 文件：926.75 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA1015L-X-T92-B	LOW FREQUENCY PNP AMPLIFIER TRANSISTOR 文件：143.93 Kbytes Page：4 Pages	UTC 友顺	UTC

2SA1015产品属性

类型
描述
型号
2SA1015
制造商
Panasonic Industrial Company
功能描述
TRANSISTOR

2SA1015供应商更多...

更新时间：2025-9-28 15:50:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市讯顺达科技有限公司	2SA1015L-GR-T92-B	UTC(友顺)	24+/25+	TO-92-2.54mm	2000	UTC原厂一级代理商,价格优势!	询价
深圳市华来深电子有限公司	2SA1015	ROHM	25+	SMD	20000	专做罗姆，一系列可以订货排单，只做原装正品假一罚十	询价
瀚佳科技(深圳)有限公司	2SA1015-GR	TOSHIBA	24+	TO-92	9800	一级代理/全新原装现货/长期供应!	询价
深圳市益百分电子有限公司	2SA1015	TOSHIBA	95+	TO92	5600	全新原装进口自己库存优势	询价
深圳市美思瑞电子科技有限公司	2SA1015	UMW 友台	23+	SOT-23-3	18000	原装正品，实单请联系	询价
深圳市宝芯创电子有限公司	2SA1015	TOSHIBA/东芝	11+	TO-92	10662	只做原厂原装,认准宝芯创配单专家	询价
深圳市宇创芯科技有限公司	2SA1015	TOSHIBA/东芝	24+	SOT-23	9600	原装现货,优势供应,支持实单!	询价
深圳诚思涵科技有限公司	2SA1015	ROHM	19+	SOT23	20000	3000	询价
深圳市汇莱威科技有限公司	2SA1015	长电	2024	SOT23	58209	16余年资质绝对原盒原盘代理渠道更多数量	询价
易创佳业科技（深圳）有限公司	2SA1015	TOSHIBA/东芝	23+	SOT-23	507	原装正品，支持实单	询价

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2SA1015-Y-AP（原厂授权中国分销商）
主要参数：分立半导体产品电流 - 集电极（Ic）（最大值）： 150mA 电压 - 集射极击穿（最大值）： 50V 电流（最大值）：100nA（ICBO） DC 电流增益（hFE）（最小值）： 120 功率 - 最大值： 400MW 频率 - 跃迁： 80MHz 工作温度：-55°C ~ 125°C 安装类型：通孔封装： TO-226-3， TO-92-3
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2SA1015晶体管资料

2SA1015产品属性

2SA1015供应商更多...

2SA1015芯片相关品牌

2SA1015规格书下载地址

2SA1015参数引脚图相关

2SA1015数据表相关新闻

2SA1012G-TO252R-R-TG_UTC代理商

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2RL090M-6

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2SA1036KT146R三极管进口原装现货

DdatasheetPDF页码索引

2RP600L-8气体放电管 2RP600L-8君耀品牌技术参数