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2SA1015晶体管资料
2SA1015别名:2SA1015三极管、2SA1015晶体管、2SA1015晶体三极管
2SA1015生产厂家:日本东芝公司
2SA1015制作材料:Si-PNP
2SA1015性质:通用型 (Uni)
2SA1015封装形式:直插封装
2SA1015极限工作电压:50V
2SA1015最大电流允许值:0.15A
2SA1015最大工作频率:>80MHZ
2SA1015引脚数:3
2SA1015最大耗散功率:0.4W
2SA1015放大倍数:
2SA1015图片代号:A-39
2SA1015vtest:50
2SA1015htest:80000100
- 2SA1015atest:0.15
2SA1015wtest:0.4
2SA1015代换 2SA1015用什么型号代替:BC177,BC204,BC212,BC213,BC251,BC257,BC307,BC512,BC557,CG1015,CG673,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SA1015 | PNPSILICONTRANSISTOR 2SA1015isPNPsiliconplanartransistordesignedforaudiofrequencygeneralpurposeamplifierapplicationsanddriverstageamplifierapplications. | MICRO-ELECTRONICS Micro Electronics | ||
2SA1015 | PNPTransistor Features ●Highvoltageandhighcurrent VCEO:=-50V(min.),IC=-150mA(max.) ●Lowniose:NF=1dB(Typ.)atf=1KHz | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | ||
2SA1015 | TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR Description DesignedforuseindriverstageofAFamplifiergeneralpurposeamplification. | DCCOM Dc Components | ||
2SA1015 | PNPEPITAXIALPLANARTRANSISTOR Description The2SA1015isdesignedforuseindriverstageofAFamplifierandgeneralpurposeamplification. | TGS Tiger Electronic Co.,Ltd | ||
2SA1015 | PNPEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIER,DRIVERSTAGEAMPLIFIER) AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | ||
2SA1015 | AudioFrequencyGeneralPurposeAmplifierApplicationsDriverStageAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | ||
2SA1015 | TO-92Plastic-EncapsulateTransistors TRANSISTOR(PNP) ●Powerdissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
2SA1015 | PNPEpitaxialPlanarTransistor PNPEpitaxialPlanarTransistor | FCIFirst Components International 戈采戈采企业股份有限公司 | ||
2SA1015 | SiliconEpitaxialPlanarTransistor FEATURES ●ComplementaryTo2SC1815. ●ExcellentHFELinearity. ●Highvoltageandhighcurrent. ●Lownoise. ●Collector-EmittervoltageBVCEO=-50V. APPLICATIONS ●Lowfrequency,lownoiseamplifier. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
2SA1015 | PNPTransistors Features ●Highvoltageandhighcurrent VCEO:=-50V(min.),IC=-150mA(max.) ●Lowniose:NF=1dB(Typ.)atf=1KHz | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
2SA1015 | Highvoltageandhighcurrent FEATURES Highvoltageandhighcurrent ExcellenthFELinearity Lowniose,ComplementarytoC1815 | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份(香港)有限公司 | ||
2SA1015 | TO-92Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Powerdissipation | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | ||
2SA1015 | SiliconPNPtransistorinaTO-92PlasticPackage Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features Highvoltageandhighcurrent,excellenthFElinearity, lownoise,complementarypairwith2SC1815. Applications Audiofrequencygeneralpurpose, driverstageamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
2SA1015 | PNPSiliconEpitaxialPlanarTransistor PNPSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. ThetransistorissubdividedintothreegroupsO,Y andG,accordingtoitsDCcurrentgain.As complementarytypetheNPNtransistor C1815isrecommended. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
2SA1015 | TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | ||
2SA1015 | TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES ●Powerdissipation | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | ||
2SA1015 | SiliconEpitaxialPlanarTransistor FEATURES ●ComplementaryTo2SC1815. ●ExcellentHFELinearity. ●Highvoltageandhighcurrent. ●Lownoise. ●Collector-EmittervoltageBVCEO=-50V. APPLICATIONS ●Lowfrequency,lownoiseamplifier. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
2SA1015 | PNPSiliconEpitaxialPlanarTransistor PNPSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintothreegroups,O,Y andG,L,accordingtoitsDCcurrentgain.As complementarytypetheNPNtransistor 2SC1815isrecommended.) | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | ||
2SA1015 | iscSiliconPNPTransistor DESCRIPTION •HighVoltageandHighCurrent Vceo=-50V(Min.),Ic=-150mA(Max) •ExcellenthFELinearity •LowNoise •ComplementtoType2SC1815 APPLICATIONS •AudiofrequencygeneralpurposeamplifierApplications •Driverstageamplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
2SA1015 | LowLevelandGeneralPurposeAmplifiers 文件:84.74 Kbytes Page:1 Pages | MICRO-ELECTRONICS Micro Electronics | ||
2SA1015 | SOT-23Plastic-EncapsulateTransistors 文件:550.62 Kbytes Page:4 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | ||
2SA1015 | LowFrequencyAmplifierPNPEpitaxialSiliconTransistor 文件:923.43 Kbytes Page:7 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd | ||
2SA1015 | COLORTELEVISIONN1PSChassis 文件:2.69679 Mbytes Page:54 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | ||
2SA1015 | COLORTELEVISION 文件:2.69679 Mbytes Page:54 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | ||
2SA1015 | COLOURTELEVISIONC9PJChassis 文件:6.49885 Mbytes Page:126 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | ||
2SA1015 | SiliconEpitaxialPlanarTransistor 文件:167.78 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
2SA1015 | AudioFrequencyGeneralPurposeAmplifierApplicationsDriverStageAmplifierApplications 文件:176.91 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | ||
2SA1015 | LOWFREQUENCYPNPAMPLIFIERTRANSISTOR 文件:143.93 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
2SA1015 | AudioFrequencyAmplifierApplicationsLowNoiseAmplifierApplications 文件:110.69 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | ||
PNPSILICONTRANSISTOR 2SA1015isPNPsiliconplanartransistordesignedforaudiofrequencygeneralpurposeamplifierapplicationsanddriverstageamplifierapplications. | MICRO-ELECTRONICS Micro Electronics | |||
PNPSiliconPlastic-EncapsulateTransistor Features •Capableof0.4WattsofPowerDissipation. •Collector-current:-0.15A •Collector-baseVoltage:-50V •Operatingandstoragejunctiontemperaturerange:-55°Cto+125°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:A1015 •LeadFreeFinish/R | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
PNPTransistors Features ●Highvoltageandhighcurrent VCEO:=-50V(min.),IC=-150mA(max.) ●Lowniose:NF=1dB(Typ.)atf=1KHz | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
PlasticEncapsulateTransistors FEATURES .PowerDissipation PCM:0.2W(Ta=25к) .CollectorCurrent ICM:-0.15A .Collector-BaseVoltage V(BR)CBO:-50V | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
TRANSISTOR(AUDIOFREQUENCYAMPLIFIERAPPLICATIONS) AudioFrequencyAmplifierApplications LowNoiseAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
PNPTransistors Features ●Highvoltageandhighcurrent VCEO:=-50V(min.),IC=-150mA(max.) ●Lowniose:NF=1dB(Typ.)atf=1KHz | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
AudioFrequencyGeneralPurposeAmplifierApplicationsDriverStageAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
PNPSiliconPlastic-EncapsulateTransistor Features •Capableof0.4WattsofPowerDissipation. •Collector-current:-0.15A •Collector-baseVoltage:-50V •Operatingandstoragejunctiontemperaturerange:-55°Cto+125°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:A1015 •LeadFreeFinish/R | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
PNPSiliconPlastic-EncapsulateTransistor Features •Capableof0.4WattsofPowerDissipation. •Collector-current:-0.15A •Collector-baseVoltage:-50V •Operatingandstoragejunctiontemperaturerange:-55°Cto+125°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:A1015 •LeadFreeFinish/R | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyGeneralPurposeAmplifierApplicationsDriverStageAmplifierApplications 文件:176.91 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
LOWFREQUENCYPNPAMPLIFIERTRANSISTOR 文件:143.93 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PNPTransistors 文件:838.09 Kbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
SiliconEpitaxialPlanarTransistor 文件:167.78 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
PnPEpitaxialPlanarTransistor 文件:919.54 Kbytes Page:2 Pages | FCIFirst Components International 戈采戈采企业股份有限公司 | |||
PNPSiliconPlastic-EncapsulateTransistor 文件:633.47 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
PNPSiliconPlastic-EncapsulateTransistor 文件:390.75 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:散装 描述:TRANS PNP 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
LOWFREQUENCYPNPAMPLIFIERTRANSISTOR 文件:143.93 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPAMPLIFIERTRANSISTOR 文件:143.93 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PNPTransistors 文件:838.09 Kbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:926.75 Kbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:926.75 Kbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PlasticEncapsulateTransistors 文件:257.51 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
AudioFrequencyAmplifierApplicationsLowNoiseAmplifierApplications 文件:110.69 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
PNPTransistors 文件:838.09 Kbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:926.75 Kbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
LOWFREQUENCYPNPAMPLIFIERTRANSISTOR 文件:143.93 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
LOWFREQUENCYPNPAMPLIFIERTRANSISTOR 文件:143.93 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconPNPtransistorinaSOT-23PlasticPackage 文件:911.79 Kbytes Page:6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
PNPSiliconPlastic-EncapsulateTransistor 文件:633.47 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |
2SA1015产品属性
- 类型
描述
- 型号
2SA1015
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CHANGJIANG |
2016+ |
TO92 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
BA |
2016+ |
SOT23 |
6523 |
只做进口原装现货!假一赔十! |
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ROHM |
24+ |
SOT23 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
ROHM |
23+ |
SOT23 |
999999 |
原装正品现货量大可订货 |
|||
长电 |
2024 |
SOT23 |
58209 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
CJ(江苏长电/长晶) |
24+ |
N/A |
7668 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
TOSHIBA |
24+ |
SOT-23 |
12200 |
新进库存/原装 |
|||
TOSHIBA |
24+ |
TO-92 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
2015+ |
500 |
公司现货库存 |
|||||
TOSHIBA/东芝 |
2410+ |
TO-92 |
50000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
2SA1015规格书下载地址
2SA1015参数引脚图相关
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- 2sc4226
- 2SA1040
- 2SA104
- 2SA1037
- 2SA1036
- 2SA1035
- 2SA1034
- 2SA1032
- 2SA1031
- 2SA1030
- 2SA103
- 2SA1029
- 2SA1028
- 2SA1027
- 2SA1026
- 2SA1025
- 2SA1024
- 2SA1023
- 2SA1022
- 2SA1021
- 2SA1020
- 2SA102
- 2SA1019
- 2SA1018
- 2SA1017
- 2SA1016K
- 2SA1016
- 2SA1015LT1
- 2SA1014
- 2SA1013
- 2SA1012
- 2SA1011
- 2SA1010
- 2SA101
- 2SA1009A
- 2SA1009
- 2SA1008
- 2SA1007(A)
- 2SA1007
- 2SA1006B
- 2SA1006A
- 2SA1006
- 2SA1005
- 2SA1004
- 2SA1003
- 2SA1002
- 2SA1001
- 2SA100
- 2SA-10
- 2SA0963
- 2SA0921
- 2SA0914
- 2SA0900
- 2SA0886
- 2SA0885
- 2S99
2SA1015数据表相关新闻
2SA1012G-TO252R-R-TG_UTC代理商
2SA1012G-TO252R-R-TG_UTC代理商
2023-2-212SA1015G-TO92K-BL-TG_UTC代理商
2SA1015G-TO92K-BL-TG_UTC代理商
2023-2-162RL090M-6
商品目录气体放电管(GDT) 直流击穿电压(最小值)- 脉冲放电电流5kA 极间电容1pF 电极数2 直流击穿电压(最大值)- 精度±20%_ 直流击穿电压(典型值)90V
2021-7-72RP600L-8气体放电管 2RP600L-8君耀品牌 技术参数
2RP600L-8气体放电管2RP600L-8君耀品牌技术参数
2020-5-82SA1015-Y-AP(原厂授权中国分销商)
主要参数: 分立半导体产品 电流-集电极(Ic)(最大值):150mA 电压-集射极击穿(最大值):50V 电流(最大值):100nA(ICBO) DC电流增益(hFE)(最小值):120 功率-最大值:400MW 频率-跃迁:80MHz 工作温度:-55°C~125°C 安装类型:通孔 封装:TO-226-3,TO-92-3
2020-3-62SA1036KT146R三极管进口原装现货
2SA1036KT146R三极管进口原装现货 启动用表面安装型三极管
2019-8-15
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