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2SA100晶体管资料
2SA100别名:2SA100三极管、2SA100晶体管、2SA100晶体三极管
2SA100生产厂家:日本松下公司
2SA100制作材料:Ge-PNP
2SA100性质:射频/高频放大 (HF)_中频放大 (ZF)
2SA100封装形式:直插封装
2SA100极限工作电压:40V
2SA100最大电流允许值:0.01A
2SA100最大工作频率:20MHZ
2SA100引脚数:3
2SA100最大耗散功率:
2SA100放大倍数:
2SA100图片代号:C-47
2SA100vtest:40
2SA100htest:20000000
- 2SA100atest:0.01
2SA100wtest:0
2SA100代换 2SA100用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG95A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SA100 | Ge PNP Drift RF Amplifier IF Amplifier Features • High fαb | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
PNP/NPN SILICON EPITAXIAL TRANSISTOR PNP/NPN Silicon Epitaxial Transistor (EBT) Audio Frequency Power Amplifier High Frequency Power Amplifier | NEC 瑞萨 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC2336,2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC2336,2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier | JMNIC 锦美电子 | |||
PNP/NPN SILICON EPITAXIAL TRANSISTOR PNP/NPN Silicon Epitaxial Transistor (EBT) Audio Frequency Power Amplifier High Frequency Power Amplifier | NEC 瑞萨 | |||
isc Silicon PNP Power Transistor DESCRIPTION ·With TO-220 package ·Complement to type 2SC2336,2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC2336,2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC2336,2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier | SAVANTIC | |||
PNP/NPN SILICON EPITAXIAL TRANSISTOR PNP/NPN Silicon Epitaxial Transistor (EBT) Audio Frequency Power Amplifier High Frequency Power Amplifier | NEC 瑞萨 | |||
isc Silicon PNP Power Transistor DESCRIPTION ·With TO-220 package ·Complement to type 2SC2336,2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC2331 • Low collector saturation voltage • Fast switching speed APPLICATIONS • Switching regulators • DC/DC converters • High frequency power amplifiers | ISC 无锡固电 | |||
SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1008 is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES • Low collector saturati | NEC 瑞萨 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC2331 • Low collector saturation voltage • Fast switching speed APPLICATIONS • Switching regulators • DC/DC converters • High frequency power amplifiers | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC2331 • Low collector saturation voltage • Fast switching speed APPLICATIONS • Switching regulators • DC/DC converters • High frequency power amplifiers | SAVANTIC | |||
SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING FEATURES • Low collector saturation voltage • Fast switching speed • Complementary transistor: 2SC2331 | RENESAS 瑞萨 | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VcEjsatr -0.6V(Max.)@ lc=-1A • Fast Switching Speed • Complement to Type 2SC2331 APPLICATIONS • Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
PNP SILICON POWER TRANSISTORS SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
PNP SILICON POWER TRANSISTORS SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
High Current Capability 文件:68.02 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistor 文件:179.61 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
High Current Capability 文件:68.07 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistor 文件:180.47 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Trans GP BJT PNP 250V 1.5A | ETC 知名厂家 | ETC | ||
Trans GP BJT PNP 250V 1.5A | ETC 知名厂家 | ETC | ||
High Current Capability 文件:68.16 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistor 文件:179.62 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Transistor-Bipolar Small Signal Transistors | RENESAS 瑞萨 | |||
isc Silicon PNP Power Transistor 文件:297.96 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistors 文件:205.61 Kbytes Page:5 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:205.61 Kbytes Page:5 Pages | JMNIC 锦美电子 | |||
isc Silicon PNP Power Transistor 文件:297.96 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistor 文件:292.23 Kbytes Page:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistor 文件:180.36 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
High Current Capability 文件:68.69 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistors 文件:222.31 Kbytes Page:5 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:222.31 Kbytes Page:5 Pages | JMNIC 锦美电子 | |||
Fast Switching Speed 文件:112.44 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc Silicon PNP Power Transistor 文件:312.04 Kbytes Page:2 Pages | ISC 无锡固电 |
2SA100产品属性
- 类型
描述
- 型号
2SA100
- 功能描述
Ge PNP Drift
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
304 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
20+ |
原装 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
24+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEC |
22+ |
TO-220 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
NEC |
25+ |
TO220 |
30000 |
代理全新原装现货,价格优势 |
|||
NEC |
2223+ |
TO-92 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
RENESAS/瑞萨 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
23+ |
TO-220 |
20000 |
专做原装正品,假一罚百! |
|||
NEC |
25+23+ |
TO-220 |
43021 |
绝对原装正品全新进口深圳现货 |
2SA100芯片相关品牌
2SA100规格书下载地址
2SA100参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
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- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SA1022
- 2SA1021
- 2SA1020
- 2SA102
- 2SA1018
- 2SA1017
- 2SA1016
- 2SA1015LT1
- 2SA1015
- 2SA1014
- 2SA1013
- 2SA1012
- 2SA1011
- 2SA1010
- 2SA101
- 2SA1009A
- 2SA1009
- 2SA1008
- 2SA1007(A)
- 2SA1007
- 2SA1006B
- 2SA1006A
- 2SA1006
- 2SA1005
- 2SA1004
- 2SA1003
- 2SA1002
- 2SA1001
- 2SA-10
- 2SA0963
- 2SA0921
- 2SA0914
- 2SA0900
- 2SA0886
- 2SA0885
- 2SA0879
- 2SA0794
- 2SA0777
- 2SA0720
- 2SA0719
- 2SA0684
- 2SA0683
- 2S99
- 2S98
- 2S97
- 2S96
- 2S95A
- 2S95
- 2S93A
- 2S93
- 2S92A
- 2S92
- 2S91
- 2S746A
- 2S746
- 2S745A
- 2S745
- 2S744A
- 2S744
- 2S743A
- 2S743
- 2S742A
- 2S323A
- 2S323
- 2S322
- 2S307A
- 2S306A
- 2S305A
2SA100数据表相关新闻
2SA1012G-TO252R-R-TG_UTC代理商
2SA1012G-TO252R-R-TG_UTC代理商
2023-2-212SA1015G-TO92K-BL-TG_UTC代理商
2SA1015G-TO92K-BL-TG_UTC代理商
2023-2-162RL090M-6
商品目录 气体放电管(GDT) 直流击穿电压(最小值) - 脉冲放电电流 5kA 极间电容 1pF 电极数 2 直流击穿电压(最大值) - 精度 ±20%_ 直流击穿电压(典型值) 90V
2021-7-72R5TPF330MFL 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商
2R5TPF330MFL 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商
2020-8-42RP600L-8气体放电管 2RP600L-8君耀品牌 技术参数
2RP600L-8气体放电管 2RP600L-8君耀品牌 技术参数
2020-5-82SA1015-Y-AP(原厂授权中国分销商)
主要参数: 分立半导体产品 电流 - 集电极(Ic)(最大值): 150mA 电压 - 集射极击穿(最大值): 50V 电流(最大值) :100nA(ICBO) DC 电流增益(hFE)(最小值): 120 功率 - 最大值: 400MW 频率 - 跃迁: 80MHz 工作温度 :-55°C ~ 125°C 安装类型: 通孔 封装: TO-226-3, TO-92-3
2020-3-6
DdatasheetPDF页码索引
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