2A, 900V N-CHANNEL POWER MOSFET

The UTC 2N90Z is an N-channel mode power MOSFET usingUTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the avalanch • RDS(ON) = 7.2Ω @VGS = 10 V \n• Typically 5.5 pF low CRSS \n• High switching speed \n• Typically 12nC low gate charge \n• Improved dv/dt capability \n• 100% avalanche tested;

2A, 900V N-CHANNEL POWER MOSFET

文件：230.14 Kbytes Page：6 Pages

2A, 900V N-CHANNEL POWER MOSFET

文件：230.14 Kbytes Page：6 Pages

2A, 900V N-CHANNEL POWER MOSFET

文件：230.14 Kbytes Page：6 Pages

900V N-Channel MOSFET

Features • 2.2 A, 900V, RDS(on) = 7.2 Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

900V N-Channel MOSFET

Features • 2.2 A, 900V, RDS(on) = 7.2 Ω @VGS = 10 V • Low gate charge ( typical 12 nC) • Low Crss ( typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

900V N-Channel MOSFET

Features • 1.4A, 900V, RDS(on) = 7.2Ω @ VGS =10V • Low gate charge (typical 12 nC) • Low Crss (typical 5.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

900V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av