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2N7002L价格

参考价格:¥0.1077

型号:2N7002L 品牌:Fairchild Semiconductor 备注:这里有2N7002L多少钱,2026年最近7天走势,今日出价,今日竞价,2N7002L批发/采购报价,2N7002L行情走势销售排行榜,2N7002L报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N7002L

丝印代码:702*;Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23

Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

2N7002L

丝印代码:702M;MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA

Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

2N7002L

2N7002L 6V N-channel MOSFET

1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio

TI

德州仪器

2N7002L

2N7002L-Q1 6V N-channel MOSFET

1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio

TI

德州仪器

2N7002L

2N7002L 6V N-channel MOSFET

1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio

TI

德州仪器

2N7002L

N 沟道小信号 MOSFET 60V,115mA,7.5 Ω

Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 • RoHS Compliant;

ONSEMI

安森美半导体

2N7002L

Small signal MOSFET

文件:207.85 Kbytes Page:4 Pages

ARTSCHIP

2N7002L

60V, 115mA, N-CHANNEL MOSFET

文件:162.6 Kbytes Page:3 Pages

UTC

友顺

2N7002L

丝印代码:702*;Small Signal MOSFET

文件:64.66 Kbytes Page:4 Pages

ONSEMI

安森美半导体

MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA

Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signa

UTC

友顺

2N7002L 6V N-channel MOSFET

1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio

TI

德州仪器

丝印代码:2N7L;2N7002L 6V N-channel MOSFET

1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio

TI

德州仪器

丝印代码:2N7;2N7002L 6V N-channel MOSFET

1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio

TI

德州仪器

丝印代码:2N7;2N7002L 6V N-channel MOSFET

1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio

TI

德州仪器

60V, 115mA, N-CHANNEL MOSFET

DESCRIPTION The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON) = 7.5Ω @VGS = 10 V * Low Reverse Transfer Capacitanc

UTC

友顺

60V, 115mA, N-CHANNEL MOSFET

DESCRIPTION The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * RDS(ON) = 7.5Ω @VGS = 10 V * Low Reverse Transfer Capacitanc

UTC

友顺

2N7002L 6V N-channel MOSFET

1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio

TI

德州仪器

2N7002L-Q1 6V N-channel MOSFET

1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio

TI

德州仪器

2N7002L 6V N-channel MOSFET

1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio

TI

德州仪器

Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23

Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

Small Signal MOSFET 115 mAmps, 60 Volts

Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23

LRC

乐山无线电

CASE 318-08, STYLE 21 SOT-23 (TO-236AB)

N-CHANNEL ENHANCEMENT TMOS FET Transistor

MOTOROLA

摩托罗拉

N-CHANNEL ENHANCEMENT

N-CHANNEL ENHANCEMENT FET Transistor

TRSYS

Transys Electronics

Small Signal MOSFET 115 mAmps, 60 Volts N?밅hannel SOT??3

• RoHS product for packing code suffix G Halogen free product for packing code suffix H • Weight:0.008g

WILLAS

威伦电子

丝印代码:7002;60V N-Channel Mosfet

Application ® Dict logi-fevl interface: TTLICMOS ® Drivers: relays, solenoids, lamps, hammers, display, memories, ransistors, tc. ® Battery operated systems ® Solid-state relays

TECHPUBLIC

台舟电子

Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23

Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

丝印代码:702M;MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA

Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

丝印代码:702M;MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA

Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23

Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

Small Signal MOSFET 115 mAmps, 60 Volts

Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23

LRC

乐山无线电

Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23

Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

丝印代码:702M;MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA

Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

丝印代码:702M;MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA

Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

丝印代码:702M;MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA

Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

60V, 115mA, N-CHANNEL MOSFET

文件:162.6 Kbytes Page:3 Pages

UTC

友顺

Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23

文件:100.78 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Small Signal MOSFET

文件:64.66 Kbytes Page:4 Pages

ONSEMI

安森美半导体

0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET

文件:291.33 Kbytes Page:6 Pages

UTC

友顺

0.3A, 60V N-CHANNEL POWER MOSFET

文件:286.68 Kbytes Page:6 Pages

UTC

友顺

60V, 115mA, N-CHANNEL MOSFET

文件:162.6 Kbytes Page:3 Pages

UTC

友顺

60V, 115mA N-CHANNEL POWER MOSFET

文件:166.31 Kbytes Page:3 Pages

UTC

友顺

60V, 115mA N-CHANNEL POWER MOSFET

文件:166.31 Kbytes Page:3 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:143.79 Kbytes Page:3 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:143.79 Kbytes Page:3 Pages

UTC

友顺

60V, 115mA N-CHANNEL POWER MOSFET

文件:166.31 Kbytes Page:3 Pages

UTC

友顺

60V, 115mA N-CHANNEL POWER MOSFET

文件:166.31 Kbytes Page:3 Pages

UTC

友顺

115 mAmps, 60 Volts

文件:313.24 Kbytes Page:4 Pages

WILLAS

威伦电子

Small signal MOSFET

文件:207.85 Kbytes Page:4 Pages

ARTSCHIP

60 V, N-channel enhancement

TRANSYS

MOSFETs

WILLAS

威伦电子

Small signal MOSFET

文件:207.85 Kbytes Page:4 Pages

ARTSCHIP

Small Signal MOSFET

文件:64.66 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23

文件:100.78 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Small Signal MOSFET

文件:64.66 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Small signal MOSFET

文件:207.85 Kbytes Page:4 Pages

ARTSCHIP

Small signal MOSFET

文件:207.85 Kbytes Page:4 Pages

ARTSCHIP

Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23

文件:100.78 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Small Signal MOSFET

文件:64.66 Kbytes Page:4 Pages

ONSEMI

安森美半导体

丝印代码:702;N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

ZETEX

2N7002L产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    60

  • VGS Max (V):

    ±20

  • VGS(th) Max (V):

    2.5

  • ID Max (A):

    0.115

  • PD Max (W):

    0.225

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    7500

  • RDS(on) Max @ VGS = 10 V(mΩ):

    7500

  • Ciss Typ (pF):

    50

  • Package Type:

    SOT-23-3

更新时间:2026-5-20 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
11304
全新原装正品/价格优惠/质量保障
ON(安森美)
25+
SOT-23(SOT-23-3)
7589
全新原装现货,支持排单订货,可含税开票
ON
23+
N/A
10000
正规渠道,只有原装!
25+
6000
公司现货库存
25+
6000
公司现货库存
ON/安森美
23+
SOT23
3000
原装正品,假一赔十
原装
25+
SOT-23
20300
原装特价2N7002LT1G即刻询购立享优惠#长期有货
onsemi(安森美)
23+
SOT-23
5000
ON
2232+
SOT-23
55000
代理渠道/只做原装/可含税

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