2N7002L价格
参考价格:¥0.1077
型号:2N7002L 品牌:Fairchild Semiconductor 备注:这里有2N7002L多少钱,2026年最近7天走势,今日出价,今日竞价,2N7002L批发/采购报价,2N7002L行情走势销售排行榜,2N7002L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N7002L | 丝印代码:702*;Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | ||
2N7002L | 丝印代码:702M;MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | ||
2N7002L | 2N7002L 6V N-channel MOSFET 1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio | TI 德州仪器 | ||
2N7002L | 2N7002L-Q1 6V N-channel MOSFET 1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio | TI 德州仪器 | ||
2N7002L | 2N7002L 6V N-channel MOSFET 1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio | TI 德州仪器 | ||
2N7002L | N 沟道小信号 MOSFET 60V,115mA,7.5 Ω Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 • RoHS Compliant; | ONSEMI 安森美半导体 | ||
2N7002L | Small signal MOSFET 文件:207.85 Kbytes Page:4 Pages | ARTSCHIP | ||
2N7002L | 60V, 115mA, N-CHANNEL MOSFET 文件:162.6 Kbytes Page:3 Pages | UTC 友顺 | ||
2N7002L | 丝印代码:702*;Small Signal MOSFET 文件:64.66 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | ||
MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signa | UTC 友顺 | |||
2N7002L 6V N-channel MOSFET 1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio | TI 德州仪器 | |||
丝印代码:2N7L;2N7002L 6V N-channel MOSFET 1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio | TI 德州仪器 | |||
丝印代码:2N7;2N7002L 6V N-channel MOSFET 1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio | TI 德州仪器 | |||
丝印代码:2N7;2N7002L 6V N-channel MOSFET 1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio | TI 德州仪器 | |||
60V, 115mA, N-CHANNEL MOSFET DESCRIPTION The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 7.5Ω @VGS = 10 V * Low Reverse Transfer Capacitanc | UTC 友顺 | |||
60V, 115mA, N-CHANNEL MOSFET DESCRIPTION The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 7.5Ω @VGS = 10 V * Low Reverse Transfer Capacitanc | UTC 友顺 | |||
2N7002L 6V N-channel MOSFET 1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio | TI 德州仪器 | |||
2N7002L-Q1 6V N-channel MOSFET 1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio | TI 德州仪器 | |||
2N7002L 6V N-channel MOSFET 1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio | TI 德州仪器 | |||
Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
Small Signal MOSFET 115 mAmps, 60 Volts Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 | LRC 乐山无线电 | |||
CASE 318-08, STYLE 21 SOT-23 (TO-236AB) N-CHANNEL ENHANCEMENT TMOS FET Transistor | MOTOROLA 摩托罗拉 | |||
N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT FET Transistor | TRSYS Transys Electronics | |||
Small Signal MOSFET 115 mAmps, 60 Volts N?밅hannel SOT??3 • RoHS product for packing code suffix G Halogen free product for packing code suffix H • Weight:0.008g | WILLAS 威伦电子 | |||
丝印代码:7002;60V N-Channel Mosfet Application ® Dict logi-fevl interface: TTLICMOS ® Drivers: relays, solenoids, lamps, hammers, display, memories, ransistors, tc. ® Battery operated systems ® Solid-state relays | TECHPUBLIC 台舟电子 | |||
Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
丝印代码:702M;MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
丝印代码:702M;MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
Small Signal MOSFET 115 mAmps, 60 Volts Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 | LRC 乐山无线电 | |||
Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available | ONSEMI 安森美半导体 | |||
丝印代码:702M;MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
丝印代码:702M;MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
丝印代码:702M;MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
60V, 115mA, N-CHANNEL MOSFET 文件:162.6 Kbytes Page:3 Pages | UTC 友顺 | |||
Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23 文件:100.78 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Small Signal MOSFET 文件:64.66 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件:291.33 Kbytes Page:6 Pages | UTC 友顺 | |||
0.3A, 60V N-CHANNEL POWER MOSFET 文件:286.68 Kbytes Page:6 Pages | UTC 友顺 | |||
60V, 115mA, N-CHANNEL MOSFET 文件:162.6 Kbytes Page:3 Pages | UTC 友顺 | |||
60V, 115mA N-CHANNEL POWER MOSFET 文件:166.31 Kbytes Page:3 Pages | UTC 友顺 | |||
60V, 115mA N-CHANNEL POWER MOSFET 文件:166.31 Kbytes Page:3 Pages | UTC 友顺 | |||
N-CHANNEL POWER MOSFET 文件:143.79 Kbytes Page:3 Pages | UTC 友顺 | |||
N-CHANNEL POWER MOSFET 文件:143.79 Kbytes Page:3 Pages | UTC 友顺 | |||
60V, 115mA N-CHANNEL POWER MOSFET 文件:166.31 Kbytes Page:3 Pages | UTC 友顺 | |||
60V, 115mA N-CHANNEL POWER MOSFET 文件:166.31 Kbytes Page:3 Pages | UTC 友顺 | |||
115 mAmps, 60 Volts 文件:313.24 Kbytes Page:4 Pages | WILLAS 威伦电子 | |||
Small signal MOSFET 文件:207.85 Kbytes Page:4 Pages | ARTSCHIP | |||
60 V, N-channel enhancement | TRANSYS | |||
MOSFETs | WILLAS 威伦电子 | |||
Small signal MOSFET 文件:207.85 Kbytes Page:4 Pages | ARTSCHIP | |||
Small Signal MOSFET 文件:64.66 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23 文件:100.78 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Small Signal MOSFET 文件:64.66 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Small signal MOSFET 文件:207.85 Kbytes Page:4 Pages | ARTSCHIP | |||
Small signal MOSFET 文件:207.85 Kbytes Page:4 Pages | ARTSCHIP | |||
Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23 文件:100.78 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Small Signal MOSFET 文件:64.66 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
丝印代码:702;N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES * 60 Volt VCEO | ZETEX |
2N7002L产品属性
- 类型
描述
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
60
- VGS Max (V):
±20
- VGS(th) Max (V):
2.5
- ID Max (A):
0.115
- PD Max (W):
0.225
- RDS(on) Max @ VGS = 4.5 V(mΩ):
7500
- RDS(on) Max @ VGS = 10 V(mΩ):
7500
- Ciss Typ (pF):
50
- Package Type:
SOT-23-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
11304 |
全新原装正品/价格优惠/质量保障 |
|||
ON(安森美) |
25+ |
SOT-23(SOT-23-3) |
7589 |
全新原装现货,支持排单订货,可含税开票 |
|||
ON |
23+ |
N/A |
10000 |
正规渠道,只有原装! |
|||
25+ |
6000 |
公司现货库存 |
|||||
25+ |
6000 |
公司现货库存 |
|||||
ON/安森美 |
23+ |
SOT23 |
3000 |
原装正品,假一赔十 |
|||
原装 |
25+ |
SOT-23 |
20300 |
原装特价2N7002LT1G即刻询购立享优惠#长期有货 |
|||
onsemi(安森美) |
23+ |
SOT-23 |
5000 |
||||
ON |
2232+ |
SOT-23 |
55000 |
代理渠道/只做原装/可含税 |
2N7002L规格书下载地址
2N7002L参数引脚图相关
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2N7002L数据表相关新闻
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2022-11-102N7002LT1G原装正品正规税票假一罚万
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2020-9-15
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