1 Features

• Low On-Resistantance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Operating Junction and Storage Temperature:

– –65°C to +150°C

• 2kV Gate-Source ESD Rating

2 Applications

• Personal Electronics

• Building Automation

• Industrial Automation

3 Description

This device is a N-channel Field-Effect Transistor in a

plastic package. It has been designed to minimize the

on-state resistance while maintaining fast switching

performance.