2N7002BK价格

参考价格:¥0.1185

型号:2N7002BK,215 品牌:NXP 备注:这里有2N7002BK多少钱,2025年最近7天走势,今日出价,今日竞价,2N7002BK批发/采购报价,2N7002BK行情走势销售排行榜,2N7002BK报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N7002BK

60 V, 350 mA N-channel Trench MOSFET

ETC

知名厂家

2N7002BK

60V N-Channel Enhancement Mode MOSFET

Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage General Features ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V)

LEIDITECH

雷卯电子

2N7002BK

60 V, 350 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pr

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002BK

60V N-Channel Mosfet

Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers display, memories, transistors, etc. Battery operated systems Solid-state relays

TECHPUBLIC

台舟电子

2N7002BK

60 V, 350 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2N7002BK

60V, Single N Channel MOSFET, RDS(ON) 1600mΩ, SOT-23

ETC

知名厂家

2N7002BK

MOS场效应

JSMSEMI

杰盛微

2N7002BK

60V N-Channel Mosfet

TECHPUBLIC

台舟电子

2N7002BK

N-Channel 60-V (D-S) MOSFET

文件:1.742 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

PANJIT

強茂

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

SUTEX

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

Zetex

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

VishayVishay Siliconix

威世科技

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

60 V, 350 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 350 mA N-channel Trench MOSFET

ETC

知名厂家

60 V, single N-channel Trench MOSFET

ETC

知名厂家

60 V, 450 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tec

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, single N-channel Trench MOSFET

ETC

知名厂家

60 V, single N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD prote

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 300 mA dual N-channel Trench MOSFET

ETC

知名厂家

60 V, 300 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 300 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 300 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 290 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD prote

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 290 mA N-channel Trench MOSFET

ETC

知名厂家

60 V, 340 mA dual N-channel Trench MOSFET

ETC

知名厂家

60V Dual N-Channel Enhancement Mode MOSFET

Features ● Fast switching ● Green Device Available ● Suit for 1.5V Gate Drive Applications

TECHPUBLIC

台舟电子

60 V, 340 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 310 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pro

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 310 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 310 mA N-channel Trench MOSFET

ETC

知名厂家

60 V, 310 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 350 mA N-channel Trench MOSFET

文件:176.53 Kbytes Page:16 Pages

Philips

飞利浦

60 V, 450 mA N-channel Trench MOSFET

文件:151.98 Kbytes Page:17 Pages

Philips

飞利浦

60 V, 450 mA N-channel Trench MOSFET

文件:356.49 Kbytes Page:16 Pages

Philips

飞利浦

60 V, single N-channel Trench MOSFET

文件:667.35 Kbytes Page:15 Pages

Philips

飞利浦

60 V, 300 mA dual N-channel Trench MOSFET

文件:384.54 Kbytes Page:16 Pages

Philips

飞利浦

60 V, 300 mA dual N-channel Trench MOSFET

文件:384.54 Kbytes Page:16 Pages

Philips

飞利浦

60 V, 340 mA dual N-channel Trench MOSFET

文件:379.26 Kbytes Page:16 Pages

Philips

飞利浦

N-Channel 60-V (D-S) MOSFET

文件:1.74836 Mbytes Page:8 Pages

VBSEMI

微碧半导体

60 V, 310 mA N-channel Trench MOSFET

文件:164.5 Kbytes Page:16 Pages

Philips

飞利浦

2N7002BK产品属性

  • 类型

    描述

  • 型号

    2N7002BK

  • 制造商

    NXP Semiconductors

  • 功能描述

    MOSFETN CH60V0.35ASOT23

  • 制造商

    NXP Semiconductors

  • 功能描述

    MOSFET,N CH,60V,0.35A,SOT23

  • 制造商

    NXP Semiconductors

  • 功能描述

    MOSFET,N CH,60V,0.35A,SOT23, Transistor

  • Polarity

    N Channel, Continuous Drain Cur

更新时间:2025-10-2 11:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
SOT363
9800
一级代理/全新原装现货/长期供应!
恩XP
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
恩XP
2021+
SOT323
9000
全新原装正品 现货供应
恩XP
24+
SOT323
410
只做原厂渠道 可追溯货源
NEXPERIA
25+
SMD
918000
明嘉莱只做原装正品现货
恩XP
23+
NA
2860
原装正品代理渠道价格优势
VBsemi(台湾微碧)
2447
SOT-23-3
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
NEXPERIA/安世
1925+
SOT23
12500
原装现货价格优势可供更多可出样
恩XP
23+
SOT23
50000
全新原装正品现货,支持订货
NEXPERIA
23+
SOT23
150000
NXP现货商!常备进口原装库存现货!

2N7002BK数据表相关新闻