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2N7002BK价格

参考价格:¥0.1185

型号:2N7002BK,215 品牌:NXP 备注:这里有2N7002BK多少钱,2026年最近7天走势,今日出价,今日竞价,2N7002BK批发/采购报价,2N7002BK行情走势销售排行榜,2N7002BK报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N7002BK

丝印代码:LN-;60 V, 350 mA N-channel Trench MOSFET

ETC

知名厂家

2N7002BK

丝印代码:72KC;60V N-Channel Enhancement Mode MOSFET

Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage General Features ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V)

LEIDITECH

雷卯电子

2N7002BK

丝印代码:LN;60 V, 350 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pr

NEXPERIA

安世

2N7002BK

丝印代码:7200;60V N-Channel Mosfet

Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers display, memories, transistors, etc. Battery operated systems Solid-state relays

TECHPUBLIC

台舟电子

2N7002BK

丝印代码:LN;60 V, 350 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

2N7002BK

60V, Single N Channel MOSFET, RDS(ON) 1600mΩ, SOT-23

•Very fast switching\n •Halogen and Antimony Free(HAF), RoHS compliant\n •Typical ESD Protection HBM Class 2;

Viitorsemi

2N7002BK

MOS场效应

JSMSEMI

杰盛微

2N7002BK

60V N-Channel Mosfet

TECHPUBLIC

台舟电子

2N7002BK

N-Channel 60-V (D-S) MOSFET

文件:1.742 Mbytes Page:8 Pages

VBSEMI

微碧半导体

60 V, 350 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

60 V, 350 mA N-channel Trench MOSFET

ETC

知名厂家

丝印代码:Z8;60 V, 450 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tec

NEXPERIA

安世

丝印代码:Z8;60 V, single N-channel Trench MOSFET

ETC

知名厂家

60 V, single N-channel Trench MOSFET

ETC

知名厂家

丝印代码:0000;60 V, single N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD prote

NEXPERIA

安世

丝印代码:ZT;60 V, 300 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

NEXPERIA

安世

丝印代码:ZT;60 V, 300 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog

NEXPERIA

安世

丝印代码:ZT*;60 V, 300 mA dual N-channel Trench MOSFET

ETC

知名厂家

60 V, 300 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

NEXPERIA

安世

丝印代码:Z3;60 V, 290 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD prote

NEXPERIA

安世

丝印代码:Z3;60 V, 290 mA N-channel Trench MOSFET

ETC

知名厂家

丝印代码:ZG;60 V, 340 mA dual N-channel Trench MOSFET

ETC

知名厂家

60V Dual N-Channel Enhancement Mode MOSFET

Features ● Fast switching ● Green Device Available ● Suit for 1.5V Gate Drive Applications

TECHPUBLIC

台舟电子

丝印代码:ZG;60 V, 340 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

丝印代码:X9;60 V, 310 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

丝印代码:X9;60 V, 310 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pro

NEXPERIA

安世

丝印代码:X9-;60 V, 310 mA N-channel Trench MOSFET

ETC

知名厂家

60 V, 310 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

60 V, 350 mA N-channel Trench MOSFET

文件:176.53 Kbytes Page:16 Pages

PHILIPS

飞利浦

60 V, 450 mA N-channel Trench MOSFET

文件:151.98 Kbytes Page:17 Pages

PHILIPS

飞利浦

60 V, 450 mA N-channel Trench MOSFET

文件:356.49 Kbytes Page:16 Pages

PHILIPS

飞利浦

60 V, single N-channel Trench MOSFET

文件:667.35 Kbytes Page:15 Pages

PHILIPS

飞利浦

丝印代码:ZT*;60 V, 300 mA dual N-channel Trench MOSFET

文件:384.54 Kbytes Page:16 Pages

PHILIPS

飞利浦

60 V, 300 mA dual N-channel Trench MOSFET

文件:384.54 Kbytes Page:16 Pages

PHILIPS

飞利浦

丝印代码:ZG;60 V, 340 mA dual N-channel Trench MOSFET

文件:379.26 Kbytes Page:16 Pages

PHILIPS

飞利浦

N-Channel 60-V (D-S) MOSFET

文件:1.74836 Mbytes Page:8 Pages

VBSEMI

微碧半导体

丝印代码:X9-;60 V, 310 mA N-channel Trench MOSFET

文件:164.5 Kbytes Page:16 Pages

PHILIPS

飞利浦

丝印代码:S72;N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

PANJIT

強茂

丝印代码:702*;N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

SUTEX

丝印代码:702;N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

ZETEX

丝印代码:72***;N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

文件:14.46 Kbytes Page:2 Pages

SEME-LAB

2N7002BK产品属性

  • 类型

    描述

  • Package name:

    SOT23

  • Product status:

    Production

  • Channel type:

    N

  • Nr of transistors:

    1

  • VDS [max] (V):

    60

  • RDSon [max] @ VGS = 10 V (mΩ):

    1600

  • RDSon [max] @ VGS = 5 V (mΩ):

    2000

  • Tj [max] (°C):

    150

  • ID [max] (A):

    0.35

  • QGD [typ] (nC):

    0.1

  • QG(tot) [typ] @ VGS = 4.5 V (nC):

    0.5

  • Ptot [max] (W):

    0.37

  • VGSth [typ] (V):

    1.6

  • Automotive qualified:

    Y

  • Ciss [typ] (pF):

    33

  • Coss [typ] (pF):

    7

  • Release date:

    2011-01-24

更新时间:2026-5-14 15:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
23+
SOT323
12580
进口原装现货
NEXPERIA
23+
SOT23
150000
NXP现货商!常备进口原装库存现货!
TOSHIBA/东芝
2019+
SOT363
36000
原盒原包装 可BOM配套
Nexperia/安世
21+
SOT-23
3946
十年信誉,只做原装,有挂就有现货!
NEXPERIA
25+
SMD
918000
明嘉莱只做原装正品现货
NEXPERIA/安世
25+
SOT-23
33500
全新进口原装现货,假一罚十
NEXPERIA/安世
19+
SOT-363-6
3000
NEXPERIA/安世
2025+
SOT-323
5000
原装进口价格优 请找坤融电子!
Nexperia(安世)
25+
SOT-23
20000
公司原装
NEXPERIA/安世
1706+
NA
10000

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