丝印代码：Z8；60 V, single N-channel Trench MOSFET

丝印代码：Z8；60 V, 450 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tec

2N7002BKM - 60 V, 450 mA N-channel Trench MOSFET

60 V, 450 mA N-channel Trench MOSFET - N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ·AEC-Q101 qualified\n·ESD protection up to 2 kV\n·Logic-level compatible\n·Trench MOSFET technology\n·Very fast switching;

60 V, 450 mA N-channel Trench MOSFET

文件：151.98 Kbytes Page：17 Pages

60 V, single N-channel Trench MOSFET

2N7002BKMB - 60 V, single N-channel Trench MOSFET

60 V, single N-channel Trench MOSFET - N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ·Very fast switching\n·Trench MOSFET technology\n·ESD protection up to 2 kV\n·Logic-level compatible\n·Ultra thin package profile with 0.37 mm height;

丝印代码：0000；60 V, single N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD prote

60 V, single N-channel Trench MOSFET

60 V, 450 mA N-channel Trench MOSFET

文件：356.49 Kbytes Page：16 Pages

60 V, single N-channel Trench MOSFET

文件：667.35 Kbytes Page：15 Pages

丝印代码：S72；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

丝印代码：702*；N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

丝印代码：702；N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

丝印代码：72***；N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

文件：14.46 Kbytes Page：2 Pages