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2N7002B价格

参考价格:¥0.1185

型号:2N7002BK,215 品牌:NXP 备注:这里有2N7002B多少钱,2026年最近7天走势,今日出价,今日竞价,2N7002B批发/采购报价,2N7002B行情走势销售排行榜,2N7002B报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N7002B

丝印代码:7002;SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE * High density cell design for low RDS(ON) * Voltage controlled small signal switch * Rugged and reliable * High saturation current capability

UMW

友台半导体

2N7002B

丝印代码:7002;SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

EVVOSEMI

翊欧

2N7002B

Small Signal MOSFET

AUK

2N7002B

60V N-Channel MOSFET

XPT

矽普特科技

2N7002B

Small Signal MOSFETS

MCC

2N7002B

N-CHannel Enhancement Mode MOSFET

文件:242.78 Kbytes Page:6 Pages

KODENSHI

可天士

丝印代码:72KC;60V N-Channel Enhancement Mode MOSFET

Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage General Features ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V)

LEIDITECH

雷卯电子

丝印代码:LN;60 V, 350 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pr

NEXPERIA

安世

丝印代码:LN-;60 V, 350 mA N-channel Trench MOSFET

ETC

知名厂家

丝印代码:7200;60V N-Channel Mosfet

Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers display, memories, transistors, etc. Battery operated systems Solid-state relays

TECHPUBLIC

台舟电子

丝印代码:LN;60 V, 350 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

60 V, 350 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

60 V, 350 mA N-channel Trench MOSFET

ETC

知名厂家

丝印代码:Z8;60 V, 450 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tec

NEXPERIA

安世

丝印代码:Z8;60 V, single N-channel Trench MOSFET

ETC

知名厂家

60 V, single N-channel Trench MOSFET

ETC

知名厂家

丝印代码:0000;60 V, single N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD prote

NEXPERIA

安世

丝印代码:ZT;60 V, 300 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

NEXPERIA

安世

丝印代码:ZT;60 V, 300 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog

NEXPERIA

安世

丝印代码:ZT*;60 V, 300 mA dual N-channel Trench MOSFET

ETC

知名厂家

60 V, 300 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

NEXPERIA

安世

丝印代码:Z3;60 V, 290 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD prote

NEXPERIA

安世

丝印代码:Z3;60 V, 290 mA N-channel Trench MOSFET

ETC

知名厂家

丝印代码:ZG;60 V, 340 mA dual N-channel Trench MOSFET

ETC

知名厂家

丝印代码:ZG;60 V, 340 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

60V Dual N-Channel Enhancement Mode MOSFET

Features ● Fast switching ● Green Device Available ● Suit for 1.5V Gate Drive Applications

TECHPUBLIC

台舟电子

丝印代码:X9;60 V, 310 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

丝印代码:X9;60 V, 310 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pro

NEXPERIA

安世

丝印代码:X9-;60 V, 310 mA N-channel Trench MOSFET

ETC

知名厂家

60 V, 310 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

N-Channel 60-V (D-S) MOSFET

文件:1.742 Mbytes Page:8 Pages

VBSEMI

微碧半导体

60 V, 350 mA N-channel Trench MOSFET

文件:176.53 Kbytes Page:16 Pages

PHILIPS

飞利浦

60 V, 450 mA N-channel Trench MOSFET

文件:151.98 Kbytes Page:17 Pages

PHILIPS

飞利浦

60 V, 450 mA N-channel Trench MOSFET

文件:356.49 Kbytes Page:16 Pages

PHILIPS

飞利浦

60 V, single N-channel Trench MOSFET

文件:667.35 Kbytes Page:15 Pages

PHILIPS

飞利浦

丝印代码:ZT*;60 V, 300 mA dual N-channel Trench MOSFET

文件:384.54 Kbytes Page:16 Pages

PHILIPS

飞利浦

60 V, 300 mA dual N-channel Trench MOSFET

文件:384.54 Kbytes Page:16 Pages

PHILIPS

飞利浦

丝印代码:ZG;60 V, 340 mA dual N-channel Trench MOSFET

文件:379.26 Kbytes Page:16 Pages

PHILIPS

飞利浦

N-Channel 60-V (D-S) MOSFET

文件:1.74836 Mbytes Page:8 Pages

VBSEMI

微碧半导体

丝印代码:X9-;60 V, 310 mA N-channel Trench MOSFET

文件:164.5 Kbytes Page:16 Pages

PHILIPS

飞利浦

丝印代码:72***;N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

VISHAYVishay Siliconix

威世威世科技公司

丝印代码:702;N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

ZETEX

丝印代码:S72;N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

PANJIT

強茂

丝印代码:702*;N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

SUTEX

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

文件:14.46 Kbytes Page:2 Pages

SEME-LAB

2N7002B产品属性

  • 类型

    描述

  • Type:

    N

  • Vds(V):

    60

  • Vgs(V):

    20

  • ESD:

    YES

  • Id_Max(A):

    0.3

  • Vth_Min(V):

    1

  • Vth_Typ(V):

    1.5

  • Vth_Max(V):

    2.5

  • Ron(mΩ)_Vgs=10V_Typ:

    1700

  • Ron(mΩ)_Vgs=10V_Max:

    3000

  • Ron(mΩ)_Vgs=4.5V_Typ:

    1800

  • Ron(mΩ)_Vgs=4.5V_Max:

    4000

更新时间:2026-7-23 17:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Nexperia(安世)
24+
N/A
12980
原装正品现货支持实单
NEXPERIA/安世
26+
SOT-23
33500
全新进口原装现货,假一罚十
NEXPERIA
25+
SMD
918000
明嘉莱只做原装正品现货
恩XP
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
Nexperia
2450+
SOT
8850
只做原装正品假一赔十为客户做到零风险!!
Nexperia
26+
Modules
100000
现货~进口原装|遥遥领先
NEXPERIA/安世
SMD
23+
6000
专业配单原装正品假一罚十
恩XP
21+
SOT-23
22800
只做原装,质量保证
NEXPERIA/安世
2025+
SOT-323
5000
原装进口价格优 请找坤融电子!
NEXPERIA
25+
5000
库存现货!支持实单

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