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位置：首页 > IC中文资料 > 2N7002B

2N7002B价格

参考价格：￥0.1185

型号：2N7002BK,215 品牌：NXP 备注：这里有2N7002B多少钱，2026年最近7天走势，今日出价，今日竞价，2N7002B批发/采购报价，2N7002B行情走势销售排行榜，2N7002B报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N7002B

丝印代码：7002；SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE * High density cell design for low RDS(ON) * Voltage controlled small signal switch * Rugged and reliable * High saturation current capability

UMW

友台半导体

2N7002B

丝印代码：7002；SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

EVVOSEMI

翊欧

2N7002B

N-CHannel Enhancement Mode MOSFET

文件：242.78 Kbytes Page：6 Pages

KODENSHI

可天士

2N7002B

Small Signal MOSFET

AUK

2N7002B

60V N-Channel MOSFET

XPT

矽普特科技

2N7002B

Small Signal MOSFETS

MCC

2N7002BK

丝印代码：LN；60 V, 350 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pr

NEXPERIA

安世

2N7002BK

丝印代码：7200；60V N-Channel Mosfet

Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers display, memories, transistors, etc. Battery operated systems Solid-state relays

TECHPUBLIC

台舟电子

2N7002BK

丝印代码：72KC；60V N-Channel Enhancement Mode MOSFET

Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage General Features ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V)

LEIDITECH

雷卯电子

2N7002BK

丝印代码：LN-；60 V, 350 mA N-channel Trench MOSFET

ETC

知名厂家

2N7002BK

丝印代码：LN；60 V, 350 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

2N7002BK_V01

60 V, 350 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

2N7002BK215

60 V, 350 mA N-channel Trench MOSFET

ETC

知名厂家

2N7002BKM

丝印代码：Z8；60 V, 450 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tec

NEXPERIA

安世

2N7002BKM

丝印代码：Z8；60 V, single N-channel Trench MOSFET

ETC

知名厂家

2N7002BKMB

丝印代码：0000；60 V, single N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD prote

NEXPERIA

安世

2N7002BKMB

60 V, single N-channel Trench MOSFET

ETC

知名厂家

2N7002BKS

丝印代码：ZT*；60 V, 300 mA dual N-channel Trench MOSFET

ETC

知名厂家

2N7002BKS

丝印代码：ZT；60 V, 300 mA dual N-channel Trench MOSFET

1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog

NEXPERIA

安世

2N7002BKS

丝印代码：ZT；60 V, 300 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

NEXPERIA

安世

2N7002BKS_V01

60 V, 300 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

NEXPERIA

安世

2N7002BKT

丝印代码：Z3；60 V, 290 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD prote

NEXPERIA

安世

2N7002BKT

丝印代码：Z3；60 V, 290 mA N-channel Trench MOSFET

ETC

知名厂家

2N7002BKV

丝印代码：ZG；60 V, 340 mA dual N-channel Trench MOSFET

ETC

知名厂家

2N7002BKV

丝印代码：ZG；60 V, 340 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

2N7002BKV

60V Dual N-Channel Enhancement Mode MOSFET

Features ● Fast switching ● Green Device Available ● Suit for 1.5V Gate Drive Applications

TECHPUBLIC

台舟电子

2N7002BKW

丝印代码：X9；60 V, 310 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pro

NEXPERIA

安世

2N7002BKW

丝印代码：X9-；60 V, 310 mA N-channel Trench MOSFET

ETC

知名厂家

2N7002BKW

丝印代码：X9；60 V, 310 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

2N7002BKW_V01

60 V, 310 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

NEXPERIA

安世

2N7002BK

N-Channel 60-V (D-S) MOSFET

文件：1.742 Mbytes Page：8 Pages

VBSEMI

微碧半导体

2N7002BK_15

60 V, 350 mA N-channel Trench MOSFET

文件：176.53 Kbytes Page：16 Pages

PHILIPS

飞利浦

2N7002BKM

60 V, 450 mA N-channel Trench MOSFET

文件：151.98 Kbytes Page：17 Pages

PHILIPS

飞利浦

2N7002BKM_15

60 V, 450 mA N-channel Trench MOSFET

文件：356.49 Kbytes Page：16 Pages

PHILIPS

飞利浦

2N7002BKMB_15

60 V, single N-channel Trench MOSFET

文件：667.35 Kbytes Page：15 Pages

PHILIPS

飞利浦

2N7002BKS

丝印代码：ZT*；60 V, 300 mA dual N-channel Trench MOSFET

文件：384.54 Kbytes Page：16 Pages

PHILIPS

飞利浦

2N7002BKS_15

60 V, 300 mA dual N-channel Trench MOSFET

文件：384.54 Kbytes Page：16 Pages

PHILIPS

飞利浦

2N7002BKV_15

丝印代码：ZG；60 V, 340 mA dual N-channel Trench MOSFET

文件：379.26 Kbytes Page：16 Pages

PHILIPS

飞利浦

2N7002BKW

N-Channel 60-V (D-S) MOSFET

文件：1.74836 Mbytes Page：8 Pages

VBSEMI

微碧半导体

2N7002BKW_15

丝印代码：X9-；60 V, 310 mA N-channel Trench MOSFET

文件：164.5 Kbytes Page：16 Pages

PHILIPS

飞利浦

2N7002

丝印代码：S72；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

PANJIT

強茂

2N7002

丝印代码：702*；N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

SUTEX

2N7002

丝印代码：702；N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

ZETEX

2N7002

丝印代码：72***；N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

VISHAYVishay Siliconix

威世威世科技公司

2N7002CSM

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

文件：14.46 Kbytes Page：2 Pages

SEME-LAB

2N7002B产品属性

  • 类型

    描述

  • Type：

    N

  • Vds(V)：

    60

  • Vgs(V)：

    20

  • ESD：

    YES

  • Id_Max(A)：

    0.3

  • Vth_Min(V)：

    1

  • Vth_Typ(V)：

    1.5

  • Vth_Max(V)：

    2.5

  • Ron(mΩ)_Vgs=10V_Typ：

    1700

  • Ron(mΩ)_Vgs=10V_Max：

    3000

  • Ron(mΩ)_Vgs=4.5V_Typ：

    1800

  • Ron(mΩ)_Vgs=4.5V_Max：

    4000

2N7002B供应商更多...

更新时间：2026-5-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
2N7002BKW
恩XP
25+
7589
全新原装现货,支持排单订货,可含税开票
询价
深圳市科芯源微电子有限公司
2N7002BKS
NEXPERIA/安世
23+
SOT-363
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
中天科工半导体（深圳）有限公司
2N7002BKV
NEXPERIA/安世
25+
SOT-666
32000
NEXPERIA/安世全新特价2N7002BKV即刻询购立享优惠#长期有货
询价
深圳市联世界科技有限公司
2N7002BKW
NEXPERIA/安世
23+
SOT-323
120000
正规报关整包出货
询价
深圳市华康联电子科技有限公司
2N7002BKS
NEXPERIA
23+
N/A
10000
只做原装,实单最低价支持
询价
深圳市腾亿芯科技有限公司
2N7002BKMAYL
Nexperia
26+
Modules
100000
现货~进口原装|遥遥领先
询价
深圳市宇创芯科技有限公司
2N7002BK,215
Nexperia(安世)
24+
N/A
12980
原装正品现货支持实单
询价
深圳市富利微电子科技有限公司
2N7002BK
NEXPERIA/安世
25+
SOT-23
33500
全新进口原装现货,假一罚十
询价
深圳诚思涵科技有限公司
2N7002BKS
恩XP
16+
SOT-363
3550
进口原装现货/价格优势!
询价
深圳市科恒伟业电子有限公司
2N7002BKW
Nexperia
2450+
SOT
8850
只做原装正品假一赔十为客户做到零风险!!
询价

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