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2N7002B价格
参考价格：￥0.1185
型号：2N7002BK,215 品牌：NXP 备注：这里有2N7002B多少钱，2025年最近7天走势，今日出价，今日竞价，2N7002B批发/采购报价，2N7002B行情走势销售排行榜，2N7002B报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N7002B | SOT- 23 Plastic-Encapsulate MOSFETS FEATURE * High density cell design for low RDS(ON) * Voltage controlled small signal switch * Rugged and reliable * High saturation current capability | UMW 友台半导体 |   | |
2N7002B | SOT- 23 Plastic-Encapsulate MOSFETS FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability | EVVOSEMI 翊欧 | | |
2N7002B | N-CHannel Enhancement Mode MOSFET 文件：242.78 Kbytes Page：6 Pages | KODENSHI 可天士 | | |
2N7002B | Small Signal MOSFET | AUK | | |
2N7002B | 60V N-Channel MOSFET | XPT 矽普特科技 | | |
2N7002B | Small Signal MOSFETS | MCC | | |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a | PANJIT 強茂 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h | SUTEX | | ||
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES * 60 Volt VCEO | Zetex | | ||
N-Channel 60-V (D-S) MOSFET FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used | Fairchild 仙童半导体 | | ||
60 V, 350 mA N-channel Trench MOSFET | ETC 知名厂家 | ETC | | |
60 V, 350 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pr | NEXPERIA 安世 | | ||
60V N-Channel Enhancement Mode MOSFET Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage General Features ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) | LEIDITECH 雷卯电子 | | ||
60V N-Channel Mosfet Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers display, memories, transistors, etc. Battery operated systems Solid-state relays | TECHPUBLIC 台舟电子 | | ||
60 V, 350 mA N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD | NEXPERIA 安世 | | ||
60 V, 350 mA N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD | NEXPERIA 安世 | | ||
60 V, 350 mA N-channel Trench MOSFET | ETC 知名厂家 | ETC | | |
60 V, 450 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tec | NEXPERIA 安世 | | ||
60 V, single N-channel Trench MOSFET | ETC 知名厂家 | ETC | | |
60 V, single N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology ESD prote | NEXPERIA 安世 | | ||
60 V, single N-channel Trench MOSFET | ETC 知名厂家 | ETC | | |
60 V, 300 mA dual N-channel Trench MOSFET | ETC 知名厂家 | ETC | | |
60 V, 300 mA dual N-channel Trench MOSFET 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog | NEXPERIA 安世 | | ||
60 V, 300 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog | NEXPERIA 安世 | | ||
60 V, 300 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog | NEXPERIA 安世 | | ||
60 V, 290 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD prote | NEXPERIA 安世 | | ||
60 V, 290 mA N-channel Trench MOSFET | ETC 知名厂家 | ETC | | |
60 V, 340 mA dual N-channel Trench MOSFET | ETC 知名厂家 | ETC | | |
60 V, 340 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD | NEXPERIA 安世 | | ||
60V Dual N-Channel Enhancement Mode MOSFET Features ● Fast switching ● Green Device Available ● Suit for 1.5V Gate Drive Applications | TECHPUBLIC 台舟电子 | | ||
60 V, 310 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pro | NEXPERIA 安世 | | ||
60 V, 310 mA N-channel Trench MOSFET | ETC 知名厂家 | ETC | | |
60 V, 310 mA N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD | NEXPERIA 安世 | | ||
60 V, 310 mA N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD | NEXPERIA 安世 | | ||
N-Channel 60-V (D-S) MOSFET 文件：1.742 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
60 V, 350 mA N-channel Trench MOSFET 文件：176.53 Kbytes Page：16 Pages | Philips 飞利浦 | | ||
60 V, 450 mA N-channel Trench MOSFET 文件：151.98 Kbytes Page：17 Pages | Philips 飞利浦 | | ||
60 V, 450 mA N-channel Trench MOSFET 文件：356.49 Kbytes Page：16 Pages | Philips 飞利浦 | | ||
60 V, single N-channel Trench MOSFET 文件：667.35 Kbytes Page：15 Pages | Philips 飞利浦 | | ||
60 V, 300 mA dual N-channel Trench MOSFET 文件：384.54 Kbytes Page：16 Pages | Philips 飞利浦 | | ||
60 V, 300 mA dual N-channel Trench MOSFET 文件：384.54 Kbytes Page：16 Pages | Philips 飞利浦 | | ||
60 V, 340 mA dual N-channel Trench MOSFET 文件：379.26 Kbytes Page：16 Pages | Philips 飞利浦 | | ||
N-Channel 60-V (D-S) MOSFET 文件：1.74836 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
60 V, 310 mA N-channel Trench MOSFET 文件：164.5 Kbytes Page：16 Pages | Philips 飞利浦 | |
2N7002B产品属性
- 类型
描述
- 型号
2N7002B
- 制造商
NXP Semiconductors
- 功能描述
MOSFETN CH60V0.35ASOT23
- 制造商
NXP Semiconductors
- 功能描述
MOSFET,N CH,60V,0.35A,SOT23
- 制造商
NXP Semiconductors
- 功能描述
MOSFET,N CH,60V,0.35A,SOT23, Transistor
- Polarity
N Channel, Continuous Drain Cur
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
24+ |
SOT |
30000 |
NEXPERIA/安世一级代理商 原装进口现货 |
|||
NEXPERIA |
23+ |
SOT23 |
150000 |
NXP现货商!常备进口原装库存现货! |
|||
NEXPERIA |
23+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
NEXPERIA/安世 |
24+25+ |
SOT-23 |
129060 |
原装现货实单必成 |
|||
NEXPERIA/安世 |
23+ |
SOT-363 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
恩XP |
24+ |
SOT363 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
恩XP |
16+ |
SOT-363 |
3550 |
进口原装现货/价格优势! |
|||
NEXPERIA/安世 |
25+ |
225000 |
原装正品 渠道优势 有需要请联系 |
||||
TOSHIBA/东芝 |
2019+ |
SOT363 |
36000 |
原盒原包装 可BOM配套 |
|||
恩XP |
24+ |
N/A |
25048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
2N7002B芯片相关品牌
2N7002B规格书下载地址
2N7002B参数引脚图相关
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2N7002B数据表相关新闻
2N7002A-7原装现货放心询
2N7002A-7原装现货放心询
2025-7-12N7002HWX
2N7002HWX
2024-1-22N7002G-SOT23.3R-TG_UTC代理商
2N7002G-SOT23.3R-TG_UTC代理商
2023-2-62N7002ET1G
2N7002ET1G
2022-5-242N7002 7002
2N7002 7002
2021-10-192N7002 CJ/长电 SOT-23 支持原装长电订货型号，欢迎咨询！
2N7002 CJ/长电 SOT-23
2021-5-19
DdatasheetPDF页码索引
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