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2N649晶体管资料

2N649别名：2N649三极管、2N649晶体管、2N649晶体三极管
2N649生产厂家：CSR_美国电子晶体管公司
2N649制作材料：Ge-NPN
2N649性质：低频或音频放大（LF）_开关管（S）
2N649封装形式：直插封装
2N649极限工作电压：20V
2N649最大电流允许值：0.05A
2N649最大工作频率：<1MHZ或未知
2N649引脚数：3
2N649最大耗散功率：0.1W
2N649放大倍数：
2N649图片代号：C-18
2N649vtest：20
2N649htest：999900
2N649atest：0.05
2N649wtest：0.1

2N649代换 2N649用什么型号代替：AC127,ASY28,ASY29,ASY73,ASY74,ASY75,2N1302,

2N649价格

参考价格：￥2.5468

型号：2N6490G 品牌：ONSemi 备注：这里有2N649多少钱，2025年最近7天走势，今日出价，今日竞价，2N649批发/采购报价，2N649行情走势销售排行榜，2N649报价。

型号	功能描述	生产厂家企业	LOGO
2N649	GERMANIUM PNP TRANSISTORS 文件：2.44311 Mbytes Page：6 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N6490	PLASTIC POWER TRANSISTORS 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications	CDIL	CDIL
2N6490	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Excellent safe operating area • Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS • Power amplifier and medium speed switching applications	ISC 无锡固电	ISC
2N6490	SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designedfor use In general-purpose amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Vottage VCEO(sus) = 40 V (Min) -2N6486, 2N6489 = 60 V (Min) -2N6487, 2N6490	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6490	POWER TRANSISTORS(15A,75W) Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. FEATURES: • Collector–Emitter Sustaining Voltage — VCEO(sus) = 40 V (Min) – 2N6486, 2N6489 = 60 V (Min) – 2N6487, 2N6490	MOSPEC 统懋	MOSPEC
2N6490	COMPLEMENTARY SILICON POWER TRANSISTORS These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 15 Amperes − hFE = 20−150 @ IC = 5.0 Adc = 5.0 (Min) @ IC = 15 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 Vdc (Min) −	ONSEMI 安森美半导体	ONSEMI
2N6490	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors in Jedec TO-220 plastic package. They are inteded for use in power linear and low frequency switching applications. The 2N6487 complementary type is 2N6490. ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY P	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
2N6490	NPN/PNP PLASTIC POWER TRANSISTORS 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications	boca 博卡	boca
2N6490	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.	Central	Central
2N6490	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N6490	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Excellent safe operating area • Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS • Power amplifier and medium speed switching applications	SAVANTIC	SAVANTIC
2N6490	isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain Specified to 15 Amperes- : hFE =20-150@ IC= -5.0A =5.0(Min)@ IC= -15A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·Complement to Type 2N6487 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications	ISC 无锡固电	ISC
2N6491	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Excellent safe operating area • Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS • Power amplifier and medium speed switching applications	SAVANTIC	SAVANTIC
2N6491	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N6491	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2N6488 APPLICATIONS • It is intended for use in power linear and low frequency switching applications	JMNIC 锦美电子	JMNIC
2N6491	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.	Central	Central
2N6491	POWER TRANSISTORS(15A,75W) Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. FEATURES: • Collector–Emitter Sustaining Voltage — VCEO(sus) = 40 V (Min) – 2N6486, 2N6489 = 60 V (Min) – 2N6487, 2N6490	MOSPEC 统懋	MOSPEC
2N6491	NPN/PNP PLASTIC POWER TRANSISTORS 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications	boca 博卡	boca
2N6491	COMPLEMENTARY SILICON POWER TRANSISTORS These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 15 Amperes − hFE = 20−150 @ IC = 5.0 Adc = 5.0 (Min) @ IC = 15 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 Vdc (Min) −	ONSEMI 安森美半导体	ONSEMI
2N6491	SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designedfor use In general-purpose amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Vottage VCEO(sus) = 40 V (Min) -2N6486, 2N6489 = 60 V (Min) -2N6487, 2N6490	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6491	PLASTIC POWER TRANSISTORS 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications	CDIL	CDIL
2N6491	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Excellent safe operating area • Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS • Power amplifier and medium speed switching applications	ISC 无锡固电	ISC
2N6491G	15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60??0 VOLTS, 75 WATTS These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 15 Amperes − hFE = 20−150 @ IC = 5.0 Adc = 5.0 (Min) @ IC = 15 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 Vdc (Min) −	ONSEMI 安森美半导体	ONSEMI
2N6492	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	ISC 无锡固电	ISC
2N6492	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	JMNIC 锦美电子	JMNIC
2N6492	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	SAVANTIC	SAVANTIC
2N6493	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	SAVANTIC	SAVANTIC
2N6493	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	ISC 无锡固电	ISC
2N6494	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	ISC 无锡固电	ISC
2N6494	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	SAVANTIC	SAVANTIC
2N6494	PNP SILICON POWER TRANSISTOR 12 AMPERE PNP SILICON POWER TRANSISTORS 40 VOLTS 100 WATTS	boca 博卡	boca
2N6495	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wideband amplifier applications	SAVANTIC	SAVANTIC
2N6495	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wideband amplifier applications	ISC 无锡固电	ISC
2N6496	HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors Devices for Switching and Amplifier Circuit in Industrial and Commercial Applications	GESS	GESS
2N6496	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High collector current rating • High power dissipation capability • Wide area of safe operation APPLICATIONS • For switching and amplifier circuits in Industrial and commercial applications	SAVANTIC	SAVANTIC
2N6496	isc Silicon NPN Power Transistor DESCRIPTION ◾ High Speed-tf= 0.5μ s (Max) ◾ Low Saturation VoltageVCE(sat)=1.0V(Min.)@ IC= 8A APPLICATIONS ◾ Designed for use in switching regulators, inverters, wideband amplifiers and power oscillators in industrial and commercial applications.	ISC 无锡固电	ISC
2N6496	Silicon NPN Power Transistor DESCRIPTION ◾ High Speed-tf= 0.5μ s (Max) ◾ Low Saturation VoltageVCE(sat)=1.0V(Min.)@ IC= 8A APPLICATIONS ◾ Designed for use in switching regulators, inverters, wideband amplifiers and power oscillators in industrial and commercial applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6497	SILICON NPN POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications.	Central	Central
2N6497	Silicon NPN Power Transistors DESCRIPTION •·With TO-220C package • High breakdown voltage APPLICATIONS • Designed for high voltage inverters, switching regulators and line operated amplifier applications	SAVANTIC	SAVANTIC
2N6497	POWER TRANSISTORS NPN SILICON High Voltage NPN Silicon Power Transistors These devices are designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 250	ONSEMI 安森美半导体	ONSEMI
2N6497	POWER TRANSISTORS(5A,80W) HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-	MOSPEC 统懋	MOSPEC
2N6497	isc Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- : hFE= 10-75@IC= 2.5A APPLICATIONS • Designed for high voltage inverters, switching regulators and line operated amplifier applications.	ISC 无锡固电	ISC
2N6497	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	boca 博卡	boca
2N6497	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6498	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6498	isc Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- : hFE= 10-75@IC= 2.5A APPLICATIONS • Designed for high voltage inverters, switching regulators and line operated amplifier applications.	ISC 无锡固电	ISC
2N6498	POWER TRANSISTORS NPN SILICON High Voltage NPN Silicon Power Transistors These devices are designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 250	ONSEMI 安森美半导体	ONSEMI
2N6498	POWER TRANSISTORS(5A,80W) HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-	MOSPEC 统懋	MOSPEC
2N6498	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	boca 博卡	boca
2N6498	SILICON NPN POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications.	Central	Central
2N6499	SILICON NPN POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications.	Central	Central
2N6499	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	boca 博卡	boca
2N6499	POWER TRANSISTORS(5A,80W) HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-	MOSPEC 统懋	MOSPEC
2N6499	isc Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- : hFE= 10-75@IC= 2.5A APPLICATIONS • Designed for high voltage inverters, switching regulators and line operated amplifier applications.	ISC 无锡固电	ISC
2N6499	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6499	SI NPN POWER BJT HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6490	Silicon PNP Power Transistors 文件：94.85 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N6490	Silicon PNP Power Transistors 文件：114.98 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2N6490	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS 文件：154.41 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6490	Complementary Silicon Plastic Power Transistors 60??0 VOLTS, 75 WATTS 文件：148.65 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI

2N649产品属性

类型
描述
型号
2N649
功能描述
两极晶体管 - BJT PNP Medium Power
RoHS
否
制造商
STMicroelectronics
晶体管极性
PNP 集电极—基极电压
VCBO
集电极—发射极最大电压
VCEO
- 40 V 发射极 - 基极电压
VEBO
- 6 V
增益带宽产品fT
直流集电极/Base Gain hfe
Min
100 A
安装风格
SMD/SMT
封装/箱体
PowerFLAT 2 x 2

2N649供应商更多...

更新时间：2025-10-29 12:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市盈慧通电子有限公司	2N6491G	ON(安森美)	2511	标准封装	8000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳良洲科技有限公司	2N6490G	ONSEMI	两年内	N/A	1050	原装现货,实单价格可谈	询价
深圳市讯顺达科技有限公司	2N6491G	ON	12+	TO-220	10000	全新原装公司现货	询价
深圳市芯球通科技有限公司	2N6491G	ON(安森美)	23+	TO-220-3	14611	公司只做原装正品,假一赔十	询价
深圳市昊创电子有限公司	2N6493	MOTOROLA/摩托罗拉	专业铁帽	TO-3	1200	原装铁帽专营,代理渠道量大可订货	询价
深圳市科恒伟业电子有限公司	2N6491G	ON/安森美	2450+	TO-220	9850	只做原厂原装正品现货或订货假一赔十!	询价
深圳市中联芯电子有限公司	2N6491G	ON	23+	晶体管-双极性晶体管	5864	原装原标原盒给价就出全网最低	询价
深圳市华来深电子有限公司	2N6497G	ON	23+	TO-220-3	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市坤融电子科技有限公司	2N6490	ON	24+	TO-220	4000	原装原厂代理可免费送样品	询价
中天科工半导体（深圳）有限公司	2N6498	ONSEMI/安森美	25+	TO-220	45000	ONSEMI/安森美全新现货2N6498即刻询购立享优惠#长期有排单订	询价

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2N649晶体管资料

2N649价格

2N649产品属性

2N649供应商更多...

2N649芯片相关品牌

2N649规格书下载地址

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2N649数据表相关新闻

2N60G-TO220FT-A-TG_UTC代理商

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