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2N649晶体管资料

2N649别名：2N649三极管、2N649晶体管、2N649晶体三极管
2N649生产厂家：CSR_美国电子晶体管公司
2N649制作材料：Ge-NPN
2N649性质：低频或音频放大（LF）_开关管（S）
2N649封装形式：直插封装
2N649极限工作电压：20V
2N649最大电流允许值：0.05A
2N649最大工作频率：<1MHZ或未知
2N649引脚数：3
2N649最大耗散功率：0.1W
2N649放大倍数：
2N649图片代号：C-18
2N649vtest：20
2N649htest：999900
2N649atest：0.05
2N649wtest：0.1

2N649代换 2N649用什么型号代替：AC127,ASY28,ASY29,ASY73,ASY74,ASY75,2N1302,

2N649价格

参考价格：￥2.5468

型号：2N6490G 品牌：ONSemi 备注：这里有2N649多少钱，2026年最近7天走势，今日出价，今日竞价，2N649批发/采购报价，2N649行情走势销售排行榜，2N649报价。

型号	功能描述	生产厂家企业	LOGO
2N649	GERMANIUM PNP TRANSISTORS 文件：2.44311 Mbytes Page：6 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N649	GERMANIUM NPN LOW POWER TRANSISTORS 文件：169.34 Kbytes Page：1 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N6490	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Excellent safe operating area • Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS • Power amplifier and medium speed switching applications	ISC 无锡固电	ISC
2N6490	isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain Specified to 15 Amperes- : hFE =20-150@ IC= -5.0A =5.0(Min)@ IC= -15A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·Complement to Type 2N6487 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications	ISC 无锡固电	ISC
2N6490	SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designedfor use In general-purpose amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Vottage VCEO(sus) = 40 V (Min) -2N6486, 2N6489 = 60 V (Min) -2N6487, 2N6490	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6490	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Excellent safe operating area • Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS • Power amplifier and medium speed switching applications	SAVANTIC	SAVANTIC
2N6490	COMPLEMENTARY SILICON POWER TRANSISTORS These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 15 Amperes − hFE = 20−150 @ IC = 5.0 Adc = 5.0 (Min) @ IC = 15 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 Vdc (Min) −	ONSEMI 安森美半导体	ONSEMI
2N6490	NPN/PNP PLASTIC POWER TRANSISTORS 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications	BOCA 博卡	BOCA
2N6490	PLASTIC POWER TRANSISTORS 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications	CDIL	CDIL
2N6490	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.	CENTRAL	CENTRAL
2N6490	POWER TRANSISTORS(15A,75W) Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. FEATURES: • Collector–Emitter Sustaining Voltage — VCEO(sus) = 40 V (Min) – 2N6486, 2N6489 = 60 V (Min) – 2N6487, 2N6490	MOSPEC 统懋	MOSPEC
2N6490	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N6490	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors in Jedec TO-220 plastic package. They are inteded for use in power linear and low frequency switching applications. The 2N6487 complementary type is 2N6490. ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY P	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
2N6491	双极功率晶体管，NPN，80 V，15 A The 15 A, 80 V PNP Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. 2N6487, 2N6488 (NPN); and 2N6490, 2N6491 (PNP) are complementary devices. • DC Current Gain Specified to 15 Amperes-- hFE = 20-150 @ IC = 5.0 Adc; hFE= 5.0 (Min) @ IC = 15 Adc\n• Collector-Emitter Sustaining Voltage--VCEO(sus) = 60 Vdc (Min) - 2N6487, 2N6490; VCEO(sus)= 80 Vdc (Min) - 2N6488, 2N6491\n• High Current Gain--Bandwidth ProductfT = 5.0 MHz (Min) @ IC = 1.0 Adc\;	ONSEMI 安森美半导体	ONSEMI
2N6491	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N6491	POWER TRANSISTORS(15A,75W) Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. FEATURES: • Collector–Emitter Sustaining Voltage — VCEO(sus) = 40 V (Min) – 2N6486, 2N6489 = 60 V (Min) – 2N6487, 2N6490	MOSPEC 统懋	MOSPEC
2N6491	NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.	CENTRAL	CENTRAL
2N6491	PLASTIC POWER TRANSISTORS 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications	CDIL	CDIL
2N6491	NPN/PNP PLASTIC POWER TRANSISTORS 2N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS 2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications	BOCA 博卡	BOCA
2N6491	COMPLEMENTARY SILICON POWER TRANSISTORS These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 15 Amperes − hFE = 20−150 @ IC = 5.0 Adc = 5.0 (Min) @ IC = 15 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 Vdc (Min) −	ONSEMI 安森美半导体	ONSEMI
2N6491	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Excellent safe operating area • Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS • Power amplifier and medium speed switching applications	SAVANTIC	SAVANTIC
2N6491	SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designedfor use In general-purpose amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Vottage VCEO(sus) = 40 V (Min) -2N6486, 2N6489 = 60 V (Min) -2N6487, 2N6490	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6491	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2N6488 APPLICATIONS • It is intended for use in power linear and low frequency switching applications	JMNIC 锦美电子	JMNIC
2N6491	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Excellent safe operating area • Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS • Power amplifier and medium speed switching applications	ISC 无锡固电	ISC
2N6491G	15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60??0 VOLTS, 75 WATTS These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 15 Amperes − hFE = 20−150 @ IC = 5.0 Adc = 5.0 (Min) @ IC = 15 Adc • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 Vdc (Min) −	ONSEMI 安森美半导体	ONSEMI
2N6492	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	ISC 无锡固电	ISC
2N6492	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	JMNIC 锦美电子	JMNIC
2N6492	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	SAVANTIC	SAVANTIC
2N6493	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	ISC 无锡固电	ISC
2N6493	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	SAVANTIC	SAVANTIC
2N6494	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	SAVANTIC	SAVANTIC
2N6494	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • DARLINGTON APPLICATIONS • General-purpose power amplifier and low frequency swithing applications	ISC 无锡固电	ISC
2N6494	PNP SILICON POWER TRANSISTOR 12 AMPERE PNP SILICON POWER TRANSISTORS 40 VOLTS 100 WATTS	BOCA 博卡	BOCA
2N6495	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wideband amplifier applications	ISC 无锡固电	ISC
2N6495	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wideband amplifier applications	SAVANTIC	SAVANTIC
2N6496	HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors Devices for Switching and Amplifier Circuit in Industrial and Commercial Applications	GESS	GESS
2N6496	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High collector current rating • High power dissipation capability • Wide area of safe operation APPLICATIONS • For switching and amplifier circuits in Industrial and commercial applications	SAVANTIC	SAVANTIC
2N6496	Silicon NPN Power Transistor DESCRIPTION ◾ High Speed-tf= 0.5μ s (Max) ◾ Low Saturation VoltageVCE(sat)=1.0V(Min.)@ IC= 8A APPLICATIONS ◾ Designed for use in switching regulators, inverters, wideband amplifiers and power oscillators in industrial and commercial applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6496	isc Silicon NPN Power Transistor DESCRIPTION ◾ High Speed-tf= 0.5μ s (Max) ◾ Low Saturation VoltageVCE(sat)=1.0V(Min.)@ IC= 8A APPLICATIONS ◾ Designed for use in switching regulators, inverters, wideband amplifiers and power oscillators in industrial and commercial applications.	ISC 无锡固电	ISC
2N6497	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6497	isc Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- : hFE= 10-75@IC= 2.5A APPLICATIONS • Designed for high voltage inverters, switching regulators and line operated amplifier applications.	ISC 无锡固电	ISC
2N6497	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	BOCA 博卡	BOCA
2N6497	SILICON NPN POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications.	CENTRAL	CENTRAL
2N6497	POWER TRANSISTORS(5A,80W) HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-	MOSPEC 统懋	MOSPEC
2N6497	POWER TRANSISTORS NPN SILICON High Voltage NPN Silicon Power Transistors These devices are designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 250	ONSEMI 安森美半导体	ONSEMI
2N6497	Silicon NPN Power Transistors DESCRIPTION •·With TO-220C package • High breakdown voltage APPLICATIONS • Designed for high voltage inverters, switching regulators and line operated amplifier applications	SAVANTIC	SAVANTIC
2N6498	POWER TRANSISTORS NPN SILICON High Voltage NPN Silicon Power Transistors These devices are designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 250	ONSEMI 安森美半导体	ONSEMI
2N6498	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	BOCA 博卡	BOCA
2N6498	POWER TRANSISTORS(5A,80W) HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-	MOSPEC 统懋	MOSPEC
2N6498	SILICON NPN POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications.	CENTRAL	CENTRAL
2N6498	isc Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- : hFE= 10-75@IC= 2.5A APPLICATIONS • Designed for high voltage inverters, switching regulators and line operated amplifier applications.	ISC 无锡固电	ISC
2N6498	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6499	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6499	SI NPN POWER BJT HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N6499	isc Silicon NPN Power Transistors DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- : hFE= 10-75@IC= 2.5A APPLICATIONS • Designed for high voltage inverters, switching regulators and line operated amplifier applications.	ISC 无锡固电	ISC
2N6499	SILICON NPN POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications.	CENTRAL	CENTRAL
2N6499	POWER TRANSISTORS(5A,80W) HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-	MOSPEC 统懋	MOSPEC
2N6499	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75	BOCA 博卡	BOCA
2N6490	Complementary Silicon Plastic Power Transistors 文件：64.3 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
2N6490	Complementary Silicon Plastic Power Transistors 60??0 VOLTS, 75 WATTS 文件：148.65 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI

2N649产品属性

类型
描述
Pb-free：
Pb
Status：
Active
Polarity：
PNP
Type：
General Purpose
VCE(sat) Max (V)：
1.3
IC Cont. (A)：
15
VCEO Min (V)：
60
VCBO (V)：
70
VEBO (V)：
5
VBE(on) (V)：
1.3
hFE Min：
20
hFE Max：
150
fT Min (MHz)：
5
PTM Max (W)：
75
Package Type：
TO-220-3

2N649供应商更多...

更新时间：2026-5-15 15:52:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
洪芯国际半导体（深圳）有限公司	2N6491	ON	26+	QFN	86720	全新原装正品价格最实惠假一赔百	询价
深圳市凌旭科技有限公司	2N6491G	ON	21+	TO-220	10000	十年信誉,只做原装,有挂就有现货!	询价
深圳市蓝山航业科技有限公司	2N6498	mosp	25+		500000	行业低价,代理渠道	询价
齐创科技(上海,北京,青岛)有限公司	2N6491G	ON	23+	TO220AB	5000	原装正品,假一罚十	询价
千层芯半导体(深圳)有限公司	2N6490	ST	24+	TO-220	10000	原装现货热卖	询价
深圳市正纳电子有限公司	2N6491	ON(安森美)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市华来深电子有限公司	2N6497G	ON	23+	TO-220-3	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳诚思涵科技有限公司	2N6491G	ON(安森美)	23+	标准封装	5000	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价
深圳市得捷芯城科技有限公司	2N6497	onsemi	25+	TO-220	22412	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市高捷芯城科技有限公司	2N6490G	onsemi(安森美)	24+	TO-220	942	原厂订货渠道,支持BOM配单一站式服务	询价

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