POWER TRANSISTORS NPN SILICON

High Voltage NPN Silicon Power Transistors These devices are designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 250

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75

SILICON NPN POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications.

POWER TRANSISTORS(5A,80W)

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- : hFE= 10-75@IC= 2.5A APPLICATIONS • Designed for high voltage inverters, switching regulators and line operated amplifier applications.

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ... designed for high voltage inverters,switching regulators and line operated amplifier applications. FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 • DC Current Gain- hFE= 10-75

三极管

Trans GP BJT NPN 300V 5A 3-Pin(3+Tab) TO-220

Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage