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2N6491晶体管资料
2N6491别名:2N6491三极管、2N6491晶体管、2N6491晶体三极管
2N6491生产厂家:美国无线电公司
2N6491制作材料:Si-PNP
2N6491性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2N6491封装形式:直插封装
2N6491极限工作电压:90V
2N6491最大电流允许值:15A
2N6491最大工作频率:>5MHZ
2N6491引脚数:3
2N6491最大耗散功率:75W
2N6491放大倍数:
2N6491图片代号:B-10
2N6491vtest:90
2N6491htest:5000100
- 2N6491atest:15
2N6491wtest:75
2N6491代换 2N6491用什么型号代替:BD610,BD710,BD744C,BD912,BDT86,3CA10F,
2N6491价格
参考价格:¥6.7235
型号:2N6491 品牌:Central 备注:这里有2N6491多少钱,2024年最近7天走势,今日出价,今日竞价,2N6491批发/采购报价,2N6491行情走势销售排行榜,2N6491报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2N6491 | POWERTRANSISTORS(15A,75W) ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage— VCEO(sus)=40V(Min)–2N6486,2N6489 =60V(Min)–2N6487,2N6490 | MOSPEC MOSPEC | ||
2N6491 | COMPLEMENTARYSILICONPOWERTRANSISTORS Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto15Amperes− hFE=20−150@IC=5.0Adc =5.0(Min)@IC=15Adc •Collector−EmitterSustainingVoltage− VCEO(sus)=60Vdc(Min)− | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N6491 | NPN/PNPPLASTICPOWERTRANSISTORS 2N6486,6487,6488NPNPLASTICPOWERTRANSISTORS 2N6489,6490,6491PNPPLASTICPOWERTRANSISTORS GeneralPurposeAmplifierandSwitchingApplications | bocaBoca semiconductor corporation 博卡博卡半导体公司 | ||
2N6491 | NPNSILICONTRANSISTOR DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites. | CentralCentral Semiconductor Corp 美国中央半导体 | ||
2N6491 | PowerTransistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
2N6491 | SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Excellentsafeoperatingarea •Complementtotype2N64862N6487 2N6488respectively APPLICATIONS •Poweramplifierandmediumspeed switchingapplications | SAVANTIC Savantic, Inc. | ||
2N6491 | SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Complementtotype2N6488 APPLICATIONS •Itisintendedforuseinpowerlinearandlow frequencyswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | ||
2N6491 | SiliconPNPPowerTransistors DESCRIPTION •WithTO-220package •Excellentsafeoperatingarea •Complementtotype2N64862N6487 2N6488respectively APPLICATIONS •Poweramplifierandmediumspeed switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
2N6491 | SILICONN-P-NANDP-N-PEPITAXIAL-BASEVERSAWATTTRANSISTORS COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS ...designedforuseIngeneral-purposeamplifierandswitchingapplications. FEATURES: *Collector-EmitterSustainingVottage VCEO(sus)=40V(Min)-2N6486,2N6489 =60V(Min)-2N6487,2N6490 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
2N6491 | PLASTICPOWERTRANSISTORS 2N6486,6487,6488NPNPLASTICPOWERTRANSISTORS 2N6489,6490,6491PNPPLASTICPOWERTRANSISTORS GeneralPurposeAmplifierandSwitchingApplications | CDIL CDIL | ||
2N6491 | ComplementarySiliconPlasticPowerTransistors60??0VOLTS,75WATTS 文件:148.65 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N6491 | SiliconPNPPowerTransistors 文件:103.14 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | ||
2N6491 | SiliconPNPPowerTransistors 文件:161.55 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | ||
2N6491 | ComplementarySiliconPlasticPowerTransistors 文件:64.3 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N6491 | SiliconPNPPowerTransistors 文件:94.85 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | ||
2N6491 | COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS 文件:154.41 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
2N6491 | 封装/外壳:TO-220-3 包装:散装 描述:TRANS PNP 80V 15A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60??0VOLTS,75WATTS Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto15Amperes− hFE=20−150@IC=5.0Adc =5.0(Min)@IC=15Adc •Collector−EmitterSustainingVoltage− VCEO(sus)=60Vdc(Min)− | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementarySiliconPlasticPowerTransistors60??0VOLTS,75WATTS 文件:148.65 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementarySiliconPlasticPowerTransistors 文件:104.53 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
封装/外壳:TO-220-3 包装:散装 描述:TRANS PNP 80V 15A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
2N6491产品属性
- 类型
描述
- 型号
2N6491
- 功能描述
两极晶体管 - BJT PNP Med Power
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/ON Semiconductor/安森美/安 |
21+ |
TO-220 |
3200 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
99 |
150 |
公司优势库存 热卖中!! |
||||
ON/安森美 |
2022 |
TO-200F |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
ON(安森美) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
onsemi |
22+/23+ |
TO-220 |
9800 |
原装进口公司现货假一赔百 |
|||
ON |
22+ |
TO-220 |
25000 |
原装现货,价格优惠,假一罚十 |
|||
ON |
20+ |
TO-220-3 |
90000 |
全新原装正品/库存充足 |
|||
ON/安森美 |
02+ |
TO-220 |
38000 |
绝对现货特价 |
|||
ON |
21+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
ON/安森美 |
2020+ |
TO-220 |
100000 |
原装正品现货 |
2N6491规格书下载地址
2N6491参数引脚图相关
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2N6491数据表相关新闻
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原装代理
2022-7-232N6509G中文资料
2N6509G中文资料
2019-2-18
DdatasheetPDF页码索引
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