2N643晶体管资料
2N643别名：2N643三极管、2N643晶体管、2N643晶体三极管
2N643生产厂家：美国无线电公司
2N643制作材料：Ge-PNP
2N643性质：射频/高频放大 （HF）_开关管 （S）
2N643封装形式：直插封装
2N643极限工作电压：30V
2N643最大电流允许值：0.1A
2N643最大工作频率：30MHZ
2N643引脚数：3
2N643最大耗散功率：0.12W
2N643放大倍数：
2N643图片代号：D-9
2N643vtest：30
2N643htest：30000000
- 2N643atest：0.1
2N643wtest：0.12
2N643代换 2N643用什么型号代替：2N2955,2N2956,2N2957,3AK33,
2N643价格
参考价格：￥16.8260
型号：2N6431 品牌：CENTRAL SEMICONDUCTOR 备注：这里有2N643多少钱，2026年最近7天走势，今日出价，今日竞价，2N643批发/采购报价，2N643行情走势销售排行榜，2N643报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN SILICON TRANSISTORS General Purpose Transistors. | CDIL |   | ||
COMPLEMENTART SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6430 series types are hermetically seald complementary small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications. | CENTRAL | | ||
COMPLEMENTARY SILICON TRANSISTOR COMPLEMENTARY SILICON TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON TRANSISTOR COMPLEMENTARY SILICON TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON TRANSISTORS General Purpose Transistors. | CDIL | | ||
SMALL SIGNAL TRANSISTORS COMPLEMENTARY SILICON TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON TRANSISTOR COMPLEMENTARY SILICON TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON TRANSISTOR COMPLEMENTARY SILICON TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications | ISC 无锡固电 | | ||
HIGH-POWER PNP SILICON TRANSISTORS HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto2N | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
POWER TRANSISTORS(25A,200W) HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB | MOSPEC 统懋 | | ||
HIGH-POWER PNP SILICON TRANSISTORS HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc= 10A = 12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto | BOCA 博卡 | | ||
HIGH POWER PNP SILICON TRANSISTORS DESCRIPTION Designed for use in Industrial - Military Power Amplifier and Switching Circuit Applications | SEME-LAB | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications | SAVANTIC | | ||
HIGH-POWER PNP SILICON TRANSISTORS HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto2N | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HIGH POWER PNP SILICON TRANSISTORS DESCRIPTION Designed for use in Industrial - Military Power Amplifier and Switching Circuit Applications | SEME-LAB | | ||
HIGH-POWER PNP SILICON TRANSISTORS HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc= 10A = 12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto | BOCA 博卡 | | ||
POWER TRANSISTORS PNP SILICON High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6437 = 120 Vdc (Min) — 2N6438 • High DC Current Gain — hFE = 20–80 @IC = 10 Adc = 12 ( | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS(25A,200W) HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB | MOSPEC 统懋 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications | ISC 无锡固电 | | ||
isc Silicon PNP Power Transistor FEATURES ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC= -10A DESCRIPTION ·Designed for use in power amplifier and switching circuits applications. | ISC 无锡固电 | | ||
POWER TRANSISTORS(25A,200W) HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB | MOSPEC 统懋 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications | SAVANTIC | | ||
POWER TRANSISTORS PNP SILICON High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6437 = 120 Vdc (Min) — 2N6438 • High DC Current Gain — hFE = 20–80 @IC = 10 Adc = 12 ( | ONSEMI 安森美半导体 | | ||
HIGH-POWER PNP SILICON TRANSISTORS HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc= 10A = 12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto | BOCA 博卡 | | ||
HIGH POWER PNP SILICON TRANSISTORS DESCRIPTION Designed for use in Industrial - Military Power Amplifier and Switching Circuit Applications | SEME-LAB | | ||
HIGH-POWER PNP SILICON TRANSISTORS HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto2N | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range. FEATURES INCLUDE: • Internal Input Matching Network • 30:1 Load VSWR Capability • All Gold Metalization | ASI | | ||
The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V The RF Line NPN Silicon Power Transistor 60 W, 225 - 400 MHz, 28 V Designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed performance in 225 to 400 MHz broadband amplifier @ 28 Vdc Output power = 60 W over 225 to 400 MHz band | MA-COM | | ||
BROADBAND RF POWER TRANSISTOR The RF Line NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large–signal output amplifier stages in the 225-400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225-400 MHz Band Minimum Gain | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
60 W, 225 to 400 MHz CONTROLLED ?쏲??BROADBAND RF POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimu | MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTOR The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimu | MACOM | | ||
Small Signal Transistors 文件：33.47 Kbytes Page：1 Pages | CENTRAL | | ||
Small Signal Transistors 文件：33.47 Kbytes Page：1 Pages | CENTRAL | | ||
Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | CENTRAL | | ||
封装/外壳：TO-206AA，TO-18-3 金属罐 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 300V 0.1A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | CENTRAL | | ||
Trans GP BJT PNP 200V 0.1A 3-Pin TO-18 Box | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Small Signal Transistors 文件：33.47 Kbytes Page：1 Pages | CENTRAL | | ||
封装/外壳：TO-206AA，TO-18-3 金属罐 包装：散装 描述：TRANS PNP 200V 0.1A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | CENTRAL | | ||
Small Signal Transistors 文件：33.47 Kbytes Page：1 Pages | CENTRAL | | ||
Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage | CENTRAL | | ||
Silicon PNP Power Transistors 文件：115.18 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：115.18 Kbytes Page：3 Pages | SAVANTIC | | ||
High-Power PNP Silicon Transistors 文件：77.7 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
High-Power PNP Silicon Transistors 文件：77.7 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Silicon PNP Power Transistors 文件：115.18 Kbytes Page：3 Pages | SAVANTIC | | ||
The RF Line NPN Silicon Power Transistor 文件：213.1 Kbytes Page：6 Pages | MA-COM | | ||
The RF Line NPN Silicon Power Transistor 文件：662.89 Kbytes Page：7 Pages | MA-COM | |
2N643产品属性
- 类型
描述
- Case：
TO-18
- Configuration/ Description：
NPN High Voltage
- Polarity：
NPN
- IC MAX：
500mA
- PD MAX：
500mW
- VCEO MAX：
200V
- hFE MIN：
50
- hFE MAX：
200
- @VCE：
10V
- VCE(SAT) MAX：
0.5V
- @IC：
20mA
- @IB：
2mA
- Cob MAX：
4pF
- fT MIN：
50MHz
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
TO-3 |
45000 |
ONSEMI/安森美全新现货2N6438即刻询购立享优惠#长期有排单订 |
|||
MOT |
24+ |
CAN3 |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ST |
25+ |
TO-220 |
20000 |
原装，请咨询 |
|||
CDMA |
QQ咨询 |
TO-3 |
63 |
全新原装 研究所指定供货商 |
|||
MOTOROLA |
23+ |
高频管 |
500 |
专营高频管模块,全新原装! |
|||
ST |
26+ |
TO-220 |
60000 |
只有原装 可配单 |
|||
CDMA |
24+ |
TO-3 |
1500 |
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航 |
|||
MOTOROLA/摩托罗拉 |
24+ |
110 |
现货供应 |
||||
M/A-COM |
24+ |
SMD |
3000 |
M/A-COM专营微波射频全新原装正品 |
|||
MICROSEMI |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
2N643规格书下载地址
2N643参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N6456
- 2N6455
- 2N6451
- 2N6450
- 2N645
- 2N6449
- 2N6448
- 2N6447
- 2N6446
- 2N6445
- 2N6444
- 2N6443
- 2N6442
- 2N6441
- 2N644
- 2N6439
- 2N6438
- 2N6437
- 2N6436
- 2N6433
- 2N6432
- 2N6431
- 2N6430
- 2N6429(A)
- 2N6428A
- 2N6428(A)
- 2N6428
- 2N6427G
- 2N6427
- 2N6426G
- 2N6426
- 2N6425A
- 2N6425
- 2N6424
- 2N6423
- 2N6422
- 2N6421
- 2N6420
- 2N642
- 2N6419
- 2N6418
- 2N6417
- 2N6416
- 2N6415
- 2N6414
- 2N6413
- 2N6412
- 2N6411
- 2N6405G
- 2N6405
- 2N6404G
- 2N6404
- 2N6403G
- 2N6403
2N643数据表相关新闻
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2023-2-232N60L-TO220F1T-TG_UTC代理商
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2023-2-32N7000L-TO92B-TG
2N7000L-TO92B-TG
2023-1-302N6043G
原装代理
2022-7-232N6509G中文资料
2N6509G中文资料
2019-2-18
DdatasheetPDF页码索引
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