POWER TRANSISTORS(25A,200W)

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB

POWER TRANSISTORS PNP SILICON

High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6437 = 120 Vdc (Min) — 2N6438 • High DC Current Gain — hFE = 20–80 @IC = 10 Adc = 12 (

HIGH-POWER PNP SILICON TRANSISTORS

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc= 10A = 12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

HIGH POWER PNP SILICON TRANSISTORS

DESCRIPTION Designed for use in Industrial - Military Power Amplifier and Switching Circuit Applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

HIGH-POWER PNP SILICON TRANSISTORS

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto2N

isc Silicon PNP Power Transistor

FEATURES ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC= -10A DESCRIPTION ·Designed for use in power amplifier and switching circuits applications.

包装：散装 描述：PNP TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

三极管

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High-Power PNP Silicon Transistors

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