60 W, 225 to 400 MHz CONTROLLED ?쏲??BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimu

POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimu

The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V

The RF Line NPN Silicon Power Transistor 60 W, 225 - 400 MHz, 28 V Designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed performance in 225 to 400 MHz broadband amplifier @ 28 Vdc Output power = 60 W over 225 to 400 MHz band

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range. FEATURES INCLUDE: • Internal Input Matching Network • 30:1 Load VSWR Capability • All Gold Metalization

BROADBAND RF POWER TRANSISTOR

The RF Line NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large–signal output amplifier stages in the 225-400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225-400 MHz Band Minimum Gain

The RF Line NPN Silicon Power Transistor

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The RF Line NPN Silicon Power Transistor

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