2N6437晶体管资料

  • 2N6437别名:2N6437三极管、2N6437晶体管、2N6437晶体三极管

  • 2N6437生产厂家:美国摩托罗拉半导体公司_KER_美国硅晶体技术公司

  • 2N6437制作材料:Si-PNP

  • 2N6437性质:开关管 (S)_功率放大 (L)

  • 2N6437封装形式:直插封装

  • 2N6437极限工作电压:120V

  • 2N6437最大电流允许值:25A

  • 2N6437最大工作频率:>40MHZ

  • 2N6437引脚数:2

  • 2N6437最大耗散功率:200W

  • 2N6437放大倍数

  • 2N6437图片代号:E-44

  • 2N6437vtest:120

  • 2N6437htest:40000100

  • 2N6437atest:25

  • 2N6437wtest:200

  • 2N6437代换 2N6437用什么型号代替:2N6378,2N6379,

型号 功能描述 生产厂家 企业 LOGO 操作
2N6437

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

SAVANTIC

2N6437

HIGH POWER PNP SILICON TRANSISTORS

DESCRIPTION Designed for use in Industrial - Military Power Amplifier and Switching Circuit Applications

SEME-LAB

Seme LAB

2N6437

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6338~2N6341 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

ISC

无锡固电

2N6437

HIGH-POWER PNP SILICON TRANSISTORS

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto2N

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6437

POWER TRANSISTORS(25A,200W)

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc=10A =12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB

MOSPEC

统懋

2N6437

POWER TRANSISTORS PNP SILICON

High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6437 = 120 Vdc (Min) — 2N6438 • High DC Current Gain — hFE = 20–80 @IC = 10 Adc = 12 (

ONSEMI

安森美半导体

2N6437

HIGH-POWER PNP SILICON TRANSISTORS

HIGH-POWER PNP SILICON TRANSISTORS ... designed for use in industrial power amplifiers and switching circuit applications. FEATURES: * High DC Current Gain hFE=20-80©lc= 10A = 12 (Min)®lc=25A * Low Collector-Emitter Saturation Voltage VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A * Complementto

boca

博卡

2N6437

High-Power PNP Silicon Transistors

文件:77.7 Kbytes Page:8 Pages

ONSEMI

安森美半导体

2N6437

Silicon PNP Power Transistors

文件:115.18 Kbytes Page:3 Pages

SAVANTIC

2N6437

封装/外壳:TO-204AA,TO-3 包装:散装 描述:TRANS PNP 100V 25A TO3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Microchip

微芯科技

2N6437

Bipolar Junction Transistors

TTELEC

2N6437

Bipolar Power Transistors

Solitron

2N6437

PNP Transistor

Microchip

微芯科技

2N6437产品属性

  • 类型

    描述

  • 型号

    2N6437

  • 制造商

    Microsemi Corporation

  • 功能描述

    TRANS GP BJT PNP 100V 25A 3PIN TO-3 - Bulk

更新时间:2025-10-8 11:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Microchip Technology
25+
TO-204AA TO-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ONSEMI/安森美
25+
TO-3
45000
ONSEMI/安森美全新现货2N6437即刻询购立享优惠#长期有排单订
MOTOROLA/摩托罗拉
23+
TO-3
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
MICROCHIP
23+
7300
专注配单,只做原装进口现货
MOT0R0LA
23+
TO-59
8510
原装正品代理渠道价格优势
MACOM
23+
NA
25000
##公司主营品牌长期供应100%原装现货可含税提供技术
M/A-COM
2318+
原装正品
4285
十年专业专注 优势渠道商正品保证
ON/安森美
23+
TO-3
50000
全新原装正品现货,支持订货
MICROSEMI
23+
SMD
880000
明嘉莱只做原装正品现货
MOTOROLA
23+
高频管
500
专营高频管模块,全新原装!

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