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2N642晶体管资料

  • 2N642别名:2N642三极管、2N642晶体管、2N642晶体三极管

  • 2N642生产厂家:美国无线电公司

  • 2N642制作材料:Ge-PNP

  • 2N642性质:射频/高频放大 (HF)

  • 2N642封装形式:直插封装

  • 2N642极限工作电压:34V

  • 2N642最大电流允许值:0.01A

  • 2N642最大工作频率:42MHZ

  • 2N642引脚数:3

  • 2N642最大耗散功率:0.08W

  • 2N642放大倍数

  • 2N642图片代号:C-36

  • 2N642vtest:34

  • 2N642htest:42000000

  • 2N642atest:0.01

  • 2N642wtest:0.08

  • 2N642代换 2N642用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,3AG95A,

2N642价格

参考价格:¥0.8368

型号:2N6426 品牌:Central 备注:这里有2N642多少钱,2026年最近7天走势,今日出价,今日竞价,2N642批发/采购报价,2N642行情走势销售排行榜,2N642报价。
型号 功能描述 生产厂家 企业 LOGO 操作

COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS

BOCA

博卡

Power Transistors

Power Transistors TO-66 Case

CENTRAL

POWER TRANSISTORS(35W)

MOSPEC

统懋

isc Silicon PNP Power Transistor

DESCRIPTION • Contunuous Collector Current-IC= -1A • Power Dissipation-PC= 35W @TC= 25℃ • Collector-Emitter Saturation Voltage- : VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS • Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switchi

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Continuous collector current-IC=-1A • Power dissipation -PD=35W @TC=25℃ • Complement to type 2N3583 APPLICATIONS • High speed switching and linear amplifier • High-voltage operational amplifiers • Switching regulators ,converters • Deflection stages and

JMNIC

锦美电子

SPRINGFIELD, NEW JERSEY 07081

Silicon NPN, PNP Power Transostors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Continuous collector current-IC=-1A • Power dissipation -PD=35W @TC=25℃ • Complement to type 2N3583 APPLICATIONS • High speed switching and linear amplifier • High-voltage operational amplifiers • Switching regulators ,converters • Deflection stages and

SAVANTIC

SI PNP POWER BJT

Silicon NPN, PNP Power Transostors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SPRINGFIELD, NEW JERSEY 07081

Silicon NPN, PNP Power Transostors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Transistors

Power Transistors TO-66 Case

CENTRAL

POWER TRANSISTORS(35W)

MOSPEC

统懋

COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS

BOCA

博卡

COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS

BOCA

博卡

POWER TRANSISTORS(35W)

MOSPEC

统懋

Power Transistors

Power Transistors TO-66 Case

CENTRAL

SPRINGFIELD, NEW JERSEY 07081

Silicon NPN, PNP Power Transostors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER TRANSISTORS(35W)

MOSPEC

统懋

Power Transistors

Power Transistors TO-66 Case

CENTRAL

COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS

BOCA

博卡

Power Transistors

Power Transistors TO-66 Case

CENTRAL

SPRINGFIELD, NEW JERSEY 07081

SILICON NPN/PNP POWER TRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

20W PNP High Power BJT Transistor

This BJT is packaged in TO-66 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

DIGITRON

SPRINGFIELD, NEW JERSEY 07081

SILICON NPN/PNP POWER TRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Transistors

Power Transistors TO-66 Case

CENTRAL

NPN Darlington Transistor

This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

FAIRCHILD

仙童半导体

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available** • Device Marking: Device Type, e.g., 2N6426, Date Code

ONSEMI

安森美半导体

NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

FAIRCHILD

仙童半导体

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available** • Device Marking: Device Type, e.g., 2N6426, Date Code

ONSEMI

安森美半导体

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • General purpose • High gain amplification.

PHILIPS

飞利浦

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC(max) = 625mW

SAMSUNG

三星

NPN EPITAXIAL SILICON TRANSISTOR

SAMSUNG

三星

NPN EPITAXIAL SILICON TRANSISTOR

SAMSUNG

三星

NPN Epitaxial Silicon Transistor

Amplifier Transistor • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC (max)=625mW

FAIRCHILD

仙童半导体

Silicon PNP Power Transistors

文件:115.19 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:154.19 Kbytes Page:3 Pages

JMNIC

锦美电子

isc Silicon PNP Power Transistor

文件:146.69 Kbytes Page:2 Pages

ISC

无锡固电

封装/外壳:TO-213AA,TO-66-2 包装:散装 描述:TRANS PNP 250V 2A TO66 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

PNP Transistor

MICROCHIP

微芯科技

PNP Transistor

MICROCHIP

微芯科技

封装/外壳:TO-213AA,TO-66-2 包装:散装 描述:TRANS PNP 300V 2A TO66 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

isc Silicon PNP Power Transistor

文件:265.67 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

文件:265.64 Kbytes Page:2 Pages

ISC

无锡固电

SI PNP POWER BJT

文件:75.68 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar PNP Device in a Hermetically sealed TO66 Metal Package

文件:11.09 Kbytes Page:1 Pages

SEME-LAB

isc Silicon PNP Power Transistor

文件:264.33 Kbytes Page:2 Pages

ISC

无锡固电

Bipolar PNP Device in a Hermetically sealed TO66

文件:15.31 Kbytes Page:1 Pages

SEME-LAB

NPN Darlington Transistor

文件:297.8 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

Darlington Transistors

文件:111.97 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Darlington Transistors NPN Silicon

文件:79.2 Kbytes Page:6 Pages

ONSEMI

安森美半导体

NPN Darlington Transistor

文件:297.8 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

Darlington Transistors NPN Silicon

文件:79.2 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Darlington Transistors NPN Silicon

文件:79.2 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Darlington Transistors NPN Silicon

文件:79.2 Kbytes Page:6 Pages

ONSEMI

安森美半导体

NPN Darlington Transistor

文件:472.29 Kbytes Page:10 Pages

FAIRCHILD

仙童半导体

Darlington Transistors

文件:111.97 Kbytes Page:8 Pages

ONSEMI

安森美半导体

NPN Darlington Transistor

文件:472.29 Kbytes Page:10 Pages

FAIRCHILD

仙童半导体

Darlington Transistors NPN Silicon

文件:79.2 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Darlington Transistors NPN Silicon

文件:79.2 Kbytes Page:6 Pages

ONSEMI

安森美半导体

2N642产品属性

  • 类型

    描述

  • Case:

    TO-92

  • Configuration/ Description:

    NPN Low Noise

  • Polarity:

    NPN

  • IC MAX:

    200mA

  • PD MAX:

    625mW

  • VCEO MAX:

    50V

  • hFE MIN:

    250

  • hFE MAX:

    650

  • @VCE:

    5V

  • VCE(SAT) MAX:

    200mV

  • @IC:

    10mA

  • @IB:

    500μA

  • Cob MAX:

    3pF

  • fT MIN:

    100MHz

更新时间:2026-5-15 15:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NS
2023+
TO92
6893
十五年行业诚信经营,专注全新正品
ON
2016+
TO92
20000
只做原装,假一罚十,公司可开17%增值税发票!
onsemi
25+
TO-92(TO-226)
18746
样件支持,可原厂排单订货!
onsemi
25+
TO-92(TO-226)
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
2N6426EBC
25+
1
1
三年内
1983
只做原装正品
ON
25+
TO-92
20000
原装
HGF
23+
TO-92
7600
专注配单,只做原装进口现货
ON
22+
20000
公司只有原装 品质保证
NS
2450+
TO92
9850
只做原装正品现货或订货假一赔十!

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