2N642晶体管资料
2N642别名:2N642三极管、2N642晶体管、2N642晶体三极管
2N642生产厂家:美国无线电公司
2N642制作材料:Ge-PNP
2N642性质:射频/高频放大 (HF)
2N642封装形式:直插封装
2N642极限工作电压:34V
2N642最大电流允许值:0.01A
2N642最大工作频率:42MHZ
2N642引脚数:3
2N642最大耗散功率:0.08W
2N642放大倍数:
2N642图片代号:C-36
2N642vtest:34
2N642htest:42000000
- 2N642atest:0.01
2N642wtest:0.08
2N642代换 2N642用什么型号代替:AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,3AG95A,
2N642价格
参考价格:¥0.8368
型号:2N6426 品牌:Central 备注:这里有2N642多少钱,2026年最近7天走势,今日出价,今日竞价,2N642批发/采购报价,2N642行情走势销售排行榜,2N642报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
| BOCA 博卡 | |||
Power Transistors Power Transistors TO-66 Case | CENTRAL | |||
POWER TRANSISTORS(35W)
| MOSPEC 统懋 | |||
isc Silicon PNP Power Transistor DESCRIPTION • Contunuous Collector Current-IC= -1A • Power Dissipation-PC= 35W @TC= 25℃ • Collector-Emitter Saturation Voltage- : VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS • Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switchi | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Continuous collector current-IC=-1A • Power dissipation -PD=35W @TC=25℃ • Complement to type 2N3583 APPLICATIONS • High speed switching and linear amplifier • High-voltage operational amplifiers • Switching regulators ,converters • Deflection stages and | JMNIC 锦美电子 | |||
SPRINGFIELD, NEW JERSEY 07081 Silicon NPN, PNP Power Transostors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Continuous collector current-IC=-1A • Power dissipation -PD=35W @TC=25℃ • Complement to type 2N3583 APPLICATIONS • High speed switching and linear amplifier • High-voltage operational amplifiers • Switching regulators ,converters • Deflection stages and | SAVANTIC | |||
SI PNP POWER BJT Silicon NPN, PNP Power Transostors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SPRINGFIELD, NEW JERSEY 07081 Silicon NPN, PNP Power Transostors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Power Transistors Power Transistors TO-66 Case | CENTRAL | |||
POWER TRANSISTORS(35W)
| MOSPEC 统懋 | |||
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
| BOCA 博卡 | |||
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
| BOCA 博卡 | |||
POWER TRANSISTORS(35W)
| MOSPEC 统懋 | |||
Power Transistors Power Transistors TO-66 Case | CENTRAL | |||
SPRINGFIELD, NEW JERSEY 07081 Silicon NPN, PNP Power Transostors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
POWER TRANSISTORS(35W)
| MOSPEC 统懋 | |||
Power Transistors Power Transistors TO-66 Case | CENTRAL | |||
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
| BOCA 博卡 | |||
Power Transistors Power Transistors TO-66 Case | CENTRAL | |||
SPRINGFIELD, NEW JERSEY 07081 SILICON NPN/PNP POWER TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20W PNP High Power BJT Transistor This BJT is packaged in TO-66 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish. | DIGITRON | |||
SPRINGFIELD, NEW JERSEY 07081 SILICON NPN/PNP POWER TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Power Transistors Power Transistors TO-66 Case | CENTRAL | |||
NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. | FAIRCHILD 仙童半导体 | |||
Darlington Transistors(NPN Silicon) Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available** • Device Marking: Device Type, e.g., 2N6426, Date Code | ONSEMI 安森美半导体 | |||
NPN Darlington Transistor NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. | FAIRCHILD 仙童半导体 | |||
Darlington Transistors(NPN Silicon) Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available** • Device Marking: Device Type, e.g., 2N6426, Date Code | ONSEMI 安森美半导体 | |||
NPN Darlington transistor DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • General purpose • High gain amplification. | PHILIPS 飞利浦 | |||
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC(max) = 625mW | SAMSUNG 三星 | |||
NPN EPITAXIAL SILICON TRANSISTOR
| SAMSUNG 三星 | |||
NPN EPITAXIAL SILICON TRANSISTOR
| SAMSUNG 三星 | |||
NPN Epitaxial Silicon Transistor Amplifier Transistor • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC (max)=625mW | FAIRCHILD 仙童半导体 | |||
Silicon PNP Power Transistors 文件:115.19 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:154.19 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
isc Silicon PNP Power Transistor 文件:146.69 Kbytes Page:2 Pages | ISC 无锡固电 | |||
封装/外壳:TO-213AA,TO-66-2 包装:散装 描述:TRANS PNP 250V 2A TO66 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MICROCHIP 微芯科技 | |||
PNP Transistor | MICROCHIP 微芯科技 | |||
PNP Transistor | MICROCHIP 微芯科技 | |||
封装/外壳:TO-213AA,TO-66-2 包装:散装 描述:TRANS PNP 300V 2A TO66 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MICROCHIP 微芯科技 | |||
isc Silicon PNP Power Transistor 文件:265.67 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc Silicon PNP Power Transistor 文件:265.64 Kbytes Page:2 Pages | ISC 无锡固电 | |||
SI PNP POWER BJT 文件:75.68 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package 文件:11.09 Kbytes Page:1 Pages | SEME-LAB | |||
isc Silicon PNP Power Transistor 文件:264.33 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Bipolar PNP Device in a Hermetically sealed TO66 文件:15.31 Kbytes Page:1 Pages | SEME-LAB | |||
NPN Darlington Transistor 文件:297.8 Kbytes Page:7 Pages | FAIRCHILD 仙童半导体 | |||
Darlington Transistors 文件:111.97 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Darlington Transistors NPN Silicon 文件:79.2 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
NPN Darlington Transistor 文件:297.8 Kbytes Page:7 Pages | FAIRCHILD 仙童半导体 | |||
Darlington Transistors NPN Silicon 文件:79.2 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Darlington Transistors NPN Silicon 文件:79.2 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Darlington Transistors NPN Silicon 文件:79.2 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
NPN Darlington Transistor 文件:472.29 Kbytes Page:10 Pages | FAIRCHILD 仙童半导体 | |||
Darlington Transistors 文件:111.97 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
NPN Darlington Transistor 文件:472.29 Kbytes Page:10 Pages | FAIRCHILD 仙童半导体 | |||
Darlington Transistors NPN Silicon 文件:79.2 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Darlington Transistors NPN Silicon 文件:79.2 Kbytes Page:6 Pages | ONSEMI 安森美半导体 |
2N642产品属性
- 类型
描述
- Case:
TO-92
- Configuration/ Description:
NPN Low Noise
- Polarity:
NPN
- IC MAX:
200mA
- PD MAX:
625mW
- VCEO MAX:
50V
- hFE MIN:
250
- hFE MAX:
650
- @VCE:
5V
- VCE(SAT) MAX:
200mV
- @IC:
10mA
- @IB:
500μA
- Cob MAX:
3pF
- fT MIN:
100MHz
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NS |
2023+ |
TO92 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
ON |
2016+ |
TO92 |
20000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
onsemi |
25+ |
TO-92(TO-226) |
18746 |
样件支持,可原厂排单订货! |
|||
onsemi |
25+ |
TO-92(TO-226) |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
2N6426EBC |
25+ |
1 |
1 |
||||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
25+ |
TO-92 |
20000 |
原装 |
|||
HGF |
23+ |
TO-92 |
7600 |
专注配单,只做原装进口现货 |
|||
ON |
22+ |
20000 |
公司只有原装 品质保证 |
||||
NS |
2450+ |
TO92 |
9850 |
只做原装正品现货或订货假一赔十! |
2N642规格书下载地址
2N642参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N644
- 2N6439
- 2N6438
- 2N6437
- 2N6436
- 2N6433
- 2N6432
- 2N6431
- 2N6430
- 2N643
- 2N6429(A)
- 2N6428A
- 2N6428(A)
- 2N6428
- 2N6427G
- 2N6427
- 2N6426G
- 2N6426
- 2N6425A
- 2N6425
- 2N6424
- 2N6423
- 2N6422
- 2N6421
- 2N6420
- 2N6419
- 2N6418
- 2N6417
- 2N6416
- 2N6415
- 2N6414
- 2N6413
- 2N6412
- 2N6411
- 2N6410
- 2N641
- 2N6409
- 2N6408
- 2N6407
- 2N6406
- 2N6405G
- 2N6405
- 2N6404G
- 2N6404
- 2N6403G
- 2N6403
- 2N6402G
- 2N6402
- 2N6401G
- 2N6401
- 2N6400G
- 2N6400
- 2N6399G
- 2N6399
- 2N6398
- 2N6397T
- 2N6397G
- 2N6397
- 2N6396
2N642数据表相关新闻
2N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-72N7002 MOSFET N-CHANNEL
2N7002 MOSFET N-CHANNEL 60V 115mA
2023-2-232N60L-TO220F1T-TG_UTC代理商
2N60L-TO220F1T-TG_UTC代理商
2023-2-32N7000L-TO92B-TG
2N7000L-TO92B-TG
2023-1-302N6043G
原装代理
2022-7-232N6509G中文资料
2N6509G中文资料
2019-2-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109