Darlington Transistors NPN Silicon

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封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：管件 描述：TRANS NPN DARL 40V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available** • Device Marking: Device Type, e.g., 2N6426, Date Code

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • General purpose • High gain amplification.

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC(max) = 625mW

NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

Darlington Transistors

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