Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available** • Device Marking: Device Type, e.g., 2N6426, Date Code

NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • General purpose • High gain amplification.

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC(max) = 625mW

NPN 双极达林顿晶体管

此 NPN 双极达林顿晶体管适用于打印字锤、继电器、电磁阀和灯驱动器等开关应用。该器件采用 TO-92 封装，适用于中等功率应用。 • Pb-Free Packages are Available**;

封装/外壳：TO-226-3，TO-92-3 长体 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN DARL 40V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Darlington Transistor

文件：472.29 Kbytes Page：10 Pages

达林顿三极管

Darlington Transistors

文件：111.97 Kbytes Page：8 Pages

NPN Darlington Transistor

文件：472.29 Kbytes Page：10 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR） 描述：TRANS NPN DARL 40V 1.2A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Darlington Transistors NPN Silicon

文件：79.2 Kbytes Page：6 Pages

Darlington Transistors NPN Silicon

文件：79.2 Kbytes Page：6 Pages

NPN EPITAXIAL PLANAR TRANSISTOR

Description Darlington Transistor