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2N638晶体管资料
2N638别名：2N638三极管、2N638晶体管、2N638晶体三极管
2N638生产厂家：CSR_美国电子晶体管公司_美国硅晶体技术公司
2N638制作材料：Ge-PNP
2N638性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N638封装形式：直插封装
2N638极限工作电压：80V
2N638最大电流允许值：5A
2N638最大工作频率：<1MHZ或未知
2N638引脚数：2
2N638最大耗散功率：60W
2N638放大倍数：
2N638图片代号：E-44
2N638vtest：80
2N638htest：999900
- 2N638atest：5
2N638wtest：60
2N638代换 2N638用什么型号代替：AL102,AL103,AUY28,2N1529,2N1534,2N1545,2N1546,2N1547,2N1548,2N3611,3AD56B,
2N638价格
参考价格：￥20.9563
型号：2N6384 品牌：Central 备注：这里有2N638多少钱，2025年最近7天走势，今日出价，今日竞价，2N638批发/采购报价，2N638行情走势销售排行榜，2N638报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN DARLINGTON POWER SILICON TRANSISTOR NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 | Microsemi 美高森美 |   | ||
POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued) | Central | | ||
NPN SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER | Central | | ||
POWER TRANSISTORS(10A,100W) 10 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 40-80 VOLTS 100 WATTS | MOSPEC 统懋 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6648/6649/6650 • DARLINGTON • High DC current gain APPLICATIONS • Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6648/6649/6650 • DARLINGTON • High DC current gain APPLICATIONS • Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6648/6649/6650 • DARLINGTON • High DC current gain APPLICATIONS • Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators | SAVANTIC | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6648/6649/6650 • DARLINGTON • High DC current gain APPLICATIONS • Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6648/6649/6650 • DARLINGTON • High DC current gain APPLICATIONS • Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6648/6649/6650 • DARLINGTON • High DC current gain APPLICATIONS • Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators | JMNIC 锦美电子 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER TRANSISTORS(10A,100W) 10 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 40-80 VOLTS 100 WATTS | MOSPEC 统懋 | | ||
NPN SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER | Central | | ||
POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued) | Central | | ||
NPN DARLINGTON POWER SILICON TRANSISTOR NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 | Microsemi 美高森美 | | ||
NPN DARLINGTON POWER SILICON TRANSISTOR NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 | Microsemi 美高森美 | | ||
POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued) | Central | | ||
POWER TRANSISTORS(10A,100W) 10 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 40-80 VOLTS 100 WATTS | MOSPEC 统懋 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
NPN SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER | Central | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6648/6649/6650 • DARLINGTON • High DC current gain APPLICATIONS • Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6648/6649/6650 • DARLINGTON • High DC current gain APPLICATIONS • Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators | ISC 无锡固电 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6648/6649/6650 • DARLINGTON • High DC current gain APPLICATIONS • Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators | SAVANTIC | | ||
PLASTIC MEDIUM-POWER SILICON TRANSISTORS DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 40-60-80 VOLTS 65 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications | JMNIC 锦美电子 | | ||
POWER TRANSISTORS(65W) 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS | MOSPEC 统懋 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites. | Central | | ||
DARLINGTON SILICON POWER TRANSISTORS 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS | boca 博卡 | | ||
DARLINGTON SILICON POWER TRANSISTORS 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS | boca 博卡 | | ||
Plastic Medium-Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit | ONSEMI 安森美半导体 | | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites. | Central | | ||
NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications | CDIL | | ||
DARLINGTON NPN SILICON POWER TRANSISTORS Plastic Medium-Power Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features • High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS(65W) 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS | MOSPEC 统懋 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications | ISC 无锡固电 | | ||
PLASTIC MEDIUM-POWER SILICON TRANSISTORS DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 40-60-80 VOLTS 65 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications | SAVANTIC | | ||
Plastic Medium-Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit | ONSEMI 安森美半导体 | | ||
Plastic Medium-Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit | ONSEMI 安森美半导体 | | ||
Plastic Medium-Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit | ONSEMI 安森美半导体 | | ||
DARLINGTON SILICON POWER TRANSISTORS 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS | boca 博卡 | | ||
NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications | CDIL | | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites. | Central | | ||
DARLINGTON NPN SILICON POWER TRANSISTORS Plastic Medium-Power Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features • High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387 | ONSEMI 安森美半导体 | | ||
PLASTIC MEDIUM-POWER SILICON TRANSISTORS DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 40-60-80 VOLTS 65 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications | JMNIC 锦美电子 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Darlington Power Transistor [multicomp] Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO(sus) = 80V (Minimum). • Collector-Emitter Saturation Voltage VCE(sat) = 2.0V (Maximum) at IC = | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER TRANSISTORS(65W) 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS | MOSPEC 统懋 | |
2N638产品属性
- 类型
描述
- 型号
2N638
- 制造商
Microsemi Corporation
- 功能描述
TRANS GP BJT PNP 80V 50A 3PIN TO-63 - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
23+ |
TO-3 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MICROCHIP(美国微芯) |
24+ |
TO204 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ONSEMI/安森美 |
25+ |
TO-3 |
45000 |
ONSEMI/安森美全新现货2N6383即刻询购立享优惠#长期有排单订 |
|||
ON |
24+ |
TO-3 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
MOTOROLA |
专业铁帽 |
TO-3 |
1200 |
原装铁帽专营,代理渠道量大可订货 |
|||
24+ |
TO-3 |
10000 |
全新 |
||||
ON |
24+ |
TO-3 |
5000 |
只做原装公司现货 |
|||
2N6383 |
25+ |
20 |
20 |
2N638芯片相关品牌
2N638规格书下载地址
2N638参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
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- 4735
- 47301
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- 4536
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- 2sc4226
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- 2N6399G
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- 2N6398
- 2N6397T
- 2N6397G
- 2N6397
- 2N6396
- 2N6395G
- 2N6395
- 2N6394G
- 2N6394
- 2N6393
- 2N6392
- 2N6391
- 2N6390
- 2N639(B)
- 2N639(A)
- 2N639
- 2N6389
- 2N6388G
- 2N6388
- 2N6387G
- 2N6387
- 2N6386
- 2N6385
- 2N6384
- 2N6383
- 2N6382
- 2N6381
- 2N6380
- 2N638(B)
- 2N638(A)
- 2N637B
- 2N637A
- 2N6379
- 2N6378
- 2N6377
- 2N6376
- 2N6375
- 2N6374
- 2N6373
- 2N6372
- 2N6371
- 2N6370
- 2N637(B)
- 2N637(A)
- 2N637
- 2N6369
- 2N6368
- 2N6367
- 2N6366
- 2N6365(A)
- 2N6364
- 2N6363
- 2N6360
- 2N6359
- 2N6358
- 2N6357
- 2N6356
- 2N6355
- 2N6354
- 2N6353
2N638数据表相关新闻
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原装代理
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2019-2-18
DdatasheetPDF页码索引
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