Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium?뭁ower Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ??80 VOLTS

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Plastic Medium-Power Silicon Transistors

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POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS

DARLINGTON NPN SILICON POWER TRANSISTORS

Plastic Medium-Power Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features • High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

Power Transistors

Power Transistors

Plastic Medium-Power Silicon Transistors

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