POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS

DARLINGTON NPN SILICON POWER TRANSISTORS

Plastic Medium-Power Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features • High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6387

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

Power Transistors

Power Transistors

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications

DARLINGTON SILICON POWER TRANSISTORS

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 40-80 VOLTS 65 WATTS

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 40-60-80 VOLTS 65 WATTS

NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications

Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit

封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN DARL 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium-Power Silicon Transistors

文件：101.9 Kbytes Page：6 Pages

Plastic Medium?뭁ower Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ??80 VOLTS

文件：79.72 Kbytes Page：6 Pages

Silicon NPN Power Transistors

文件：96.46 Kbytes Page：3 Pages

Plastic Medium-Power Silicon Transistors

文件：75.7 Kbytes Page：8 Pages

Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit

Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 • Low Collector−Emit

Plastic Medium?뭁ower Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ??80 VOLTS

文件：79.72 Kbytes Page：6 Pages

Plastic Medium-Power Silicon Transistors

文件：101.9 Kbytes Page：6 Pages

Plastic Medium-Power Silicon Transistors

文件：113.64 Kbytes Page：6 Pages

Plastic Medium-Power Silicon Transistors

文件：113.64 Kbytes Page：6 Pages

Plastic Medium?뭁ower Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ??80 VOLTS

文件：79.72 Kbytes Page：6 Pages

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个